Abstract: A thyristor includes a semiconductor body having a first emitter layer and a first base layer on an anode side, a second base layer and a second emitter layer on a cathode side, a cathode contact, and an electrically insulating insulation layer having openings. The insulation layer is disposed between the second emitter layer and the cathode contact. The openings have dimensions and spacings making the insulation layer form an electrical resistor for reducing current filamentation. A series resistor is incorporated on the cathode side and is formed by the pierced insulation layer between the cathode side metallizing, forming the terminal contact, and the doped semiconductor material of the emitter on the cathode side. The openings are preferably cylindrical. In a silicon component element, the insulation layer preferably is SiO2 or Si3N4, or a layered succession of SiO2 and Si3N4.

Abstract: Short circuits on the anode side of thyristors can be manufactured easily d inexpensively if a p-doped layer is first generated on the anode side. On it, after an oxide masking and structuring process, grooves (7) are produced, which extend into the base zone (1) of the thyristor on the anode side, in which the short-circuit areas are then generated. After the oxide has been removed, the anode electrode is applied, which contacts the p-doped layer and the short-circuit areas. As an alternative, the short-circuit areas may also be generated first through the openings of a structured oxide. Then, after removal of the oxide, the entire surface is p-doped, with the doping being less than that of the short-circuit areas. Then the anode electrode is applied.

Abstract: A semiconductor component. The semiconductor component has two superimposed semiconductor layers of different conduction materials. An upper layer is provided with an opening through which a lower layer is exposed. A space saving scheme for connecting electrically the two layers is provided, by depositing a connecting layer which contacts the upper layer at an edge only and the lower layer is contacted at its depth where its doping material maximum is located. This requires a doping equal to or greater than 10.sup.19 cm.sup.-3 for the upper layer, which is dependent on thickness.

Abstract: An MIS-semiconductor component, includes a substrate having a surface, a first zone of a given first conductivity type embedded in the substrate, a second zone of a given second conductivity type embedded in the first zone, at least one insulating layer disposed on the substrate surface, a contact, and an auxiliary zone surrounding at least part of the contact and being of the second conductivity type and more heavily doped than the second zone. The at least one insulating layer and the second zone have a hole formed therein. The contact is connected to the first zone through the hole and is electrically connected to the second zone through the hole and the auxiliary zone.

Abstract: A thyristor having current-amplifying auxiliary structures with an auxiliary emitter electrode out of contact with the contact electrode. The auxiliary emitter electrode is formed thinner than the main emitter electrode. The contact electrode is formed by simple planar techniques to have a plane surface on top of the semiconductor body.