Abstract: A laser assembly comprising: a semiconductor laser with a fast gain medium, wherein the gain relaxation time of the gain medium is smaller than the round-trip time in a standing wave cavity; a DC source coupled to the standing wave cavity; and an AC injection device for injecting an electrical AC signal within a range and/or within an integer multiple of the range into the standing wave cavity, the range within ±1% of the natural round-trip frequency in the standing wave cavity, comprising at least a first and second electric contact section extending along a first longitudinal side of the longitudinal extension of the standing wave cavity, the AC injection device coupled to the first and/or second electric contact section such that the complex amplitude of the electrical AC signal differs for the first and second longitudinal electric contact section.

Abstract: A laser assembly (1) comprising: a semiconductor laser (2) with a fast gain medium, wherein the gain relaxation time of the gain medium is smaller than the round-trip time in the standing wave cavity, in particular a quantum cascade laser or an interband cascade laser, and a standing wave cavity (3); a DC source (9) coupled to the standing wave cavity (3) for pumping the laser (2); and an AC injection device (10) for injecting an electrical AC signal into the standing wave cavity (3) to stabilize an optical frequency comb, the AC injection device being suitable for producing an electrical AC signal within a range and/or within an integer multiple of the range, wherein the range is within ±1% of the natural round-trip frequency in the standing wave cavity, comprising at least a first and a second electric contact section (5, 6) extending along a first longitudinal side of the longitudinal extension of the standing wave cavity (3), wherein the AC injection device (10) is coupled to the first and/or to the secon

Abstract: Devices (e.g., optoelectronic devices such as solar cells and infrared or THz photodetectors) with a nanomaterial having vertically correlated quantum dots with built-in charge (VC Q-BIC) and methods of making such devices. The VC Q-BIC material has two or more quantum dot layers, where the layers have quantum dots (individual quantum dots or quantum dot clusters) in a semiconductor material, and adjacent quantum dot layers are separated by a spacer layer of doped semiconductor material. The VC-QBIC nanomaterial provides long photocarrier lifetime, which improves the responsivity and sensitivity of detectors or conversion efficiency in solar cells as compared to previous comparable devices.

Abstract: Devices (e.g., optoelectronic devices such as solar cells and infrared or THz photodetectors) with a nanomaterial having vertically correlated quantum dots with built-in charge (VC Q-BIC) and methods of making such devices. The VC Q-BIC material has two or more quantum dot layers, where the layers have quantum dots (individual quantum dots or quantum dot clusters) in a semiconductor material, and adjacent quantum dot layers are separated by a spacer layer of doped semiconductor material. The VC-QBIC nanomaterial provides long photocarrier lifetime, which improves the responsivity and sensitivity of detectors or conversion efficiency in solar cells as compared to previous comparable devices.

Abstract: The invention relates to a device for generating terahertz (THz) radiation comprising a short pulse laser (1) with mode coupling to which a pump beam (3) is supplied, and comprising a semiconductor component equipped with a resonator mirror (M4). This semiconductor component serves to derive the THz radiation based on incident laser pulses. The resonator mirror (M4), preferably a resonator end mirror, is provided with a semiconductor layer (8), which is partially transparent to the laser radiation of the short pulse laser (1), whose absorption edge is lower than the energy of the laser radiation of the short pulse laser (1) and on which the electrodes (9, 10) that can be connected to a bias voltage source are placed in order to generate and radiate the THz radiation in the electric field.

Abstract: The invention relates to a device for generating terahertz (THz) radiation comprising a short pulse laser (1) with mode coupling to which a pump beam (3) is supplied, and comprising a semiconductor component equipped with a resonator mirror (M4). This semiconductor component serves to derive the THz radiation based on incident laser pulses. The resonator mirror (M4), preferably a resonator end mirror, is provided with a semiconductor layer (8), which is partially transparent to the laser radiation of the short pulse laser (1), whose absorption edge is lower than the energy of the laser radiation of the short pulse laser (1) and on which the electrodes (9, 10) that can be connected to a bias voltage source are placed in order to generate and radiate the THz radiation in the electric field.