Abstract: A method for manufacturing a surgical implant. A metal layer is deposited onto a polyaryletherketone (PAEK) substrate by generating a series of pulses using a high power impulse magnetron sputtering process. Each pulse is applied in a series of micro pulse steps comprising (i) micro pulse on steps ranging from 10 ?s to 100 ?s and (ii) micro pulse off steps ranging from 5 ?s as to 400 ?s; at a repetition frequency ranging from 50-2000 Hz with 2 micropulses to 20 micropulses per repetition, a total pulse on time ranging from 25 ?s to 800 ?s for 5 minutes to 300 minutes at averaged power ranging from 200 W to 3000 W. The series of pulses are performed in a unipolar mode or a bipolar mode.

Abstract: The present disclosure relates, at least in part, to a surgical implant and a method for manufacturing the surgical implant. In one embodiment, the surgical implant comprises a metallic substrate; a tantalum interlayer disposed adjacent to the metallic substrate and comprising ?-tantalum and amorphous tantalum; at least one DLC layer disposed adjacent the tantalum interlayer; wherein the amorphous tantalum has a phase gradient increasing from the metallic substrate side to the DLC side; wherein the DLC layer has a hardness value and an elastic modulus value; and wherein the hardness value has a gradient increasing away from the tantalum side; and wherein the elastic modulus value has a gradient from the tantalum side.

Abstract: A method for manufacturing a surgical implant. A metal layer is deposited onto a polyaryletherketone (PAEK) substrate by generating a series of pulses using a high power impulse magnetron sputtering process. Each pulse is applied in a series of micro pulse steps comprising (i) micro pulse on steps ranging from 10 ?s to 100 ?s and (ii) micro pulse off steps ranging from 5 ?s as to 400 ?s; at a repetition frequency ranging from 50-2000 Hz with 2 micropulses to 20 micropulses per repetition, a total pulse on time ranging from 25 ?s to 800 ?s for 5 minutes to 300 minutes at averaged power ranging from 200 W to 3000 W. The series of pulses are performed in a unipolar mode or a bipolar mode.

Abstract: The present disclosure relates, at least in part, to a surgical implant and a method for manufacturing the surgical implant. In one embodiment, the surgical implant comprises a metallic substrate; a tantalum interlayer disposed adjacent to the metallic substrate and comprising ?-tantalum and amorphous tantalum; at least one DLC layer disposed adjacent the tantalum interlayer; wherein the amorphous tantalum has a phase gradient increasing from the metallic substrate side to the DLC side; wherein the DLC layer has a hardness value and an elastic modulus value; and wherein the hardness value has a gradient increasing away from the tantalum side; and wherein the elastic modulus value has a gradient from the tantalum side.