Patents by Inventor Gou-Chung Chi
Gou-Chung Chi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8283638Abstract: A method for preparing an ion source from nanoparticles is provided. The method includes the steps of: providing nanoparticles, vaporizing the nanoparticles from a solid state to a gaseous state, and ionizing the gas to form the ion source. The ion source is prepared by placing solid nanoparticles in a stainless tube, heating and vaporizing the solid nanoparticles into a gaseous state, and ionizing the gas. The gas can be formed at a lower heating temperature than when solid lumps are used because solid nanoparticles have a lower melting point than solid lumps. Thus, the heating temperature is lowered, and the preparing time of the ion source is shortened. Besides, under the same temperature, an ion source prepared from nanoparticles provides higher vapor pressure and allows a higher implantation dose than when the ion source is prepared from solid lumps, thus expanding the applicability of ion implantation technology.Type: GrantFiled: September 16, 2009Date of Patent: October 9, 2012Assignee: National Central UniversityInventors: Gou-Chung Chi, Ping-Jung Huang, Chung-Wei Chen, Ching-Jen Pan, Yu-Lun Liu, Fu-Chun Tsao
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Publication number: 20110012024Abstract: A method for preparing an ion source from nanoparticles is provided. The method includes the steps of: providing nanoparticles, vaporizing the nanoparticles from a solid state to a gaseous state, and ionizing the gas to form the ion source. The ion source is prepared by placing solid nanoparticles in a stainless tube, heating and vaporizing the solid nanoparticles into a gaseous state, and ionizing the gas. The gas can be formed at a lower heating temperature than when solid lumps are used because solid nanoparticles have a lower melting point than solid lumps. Thus, the heating temperature is lowered, and the preparing time of the ion source is shortened. Besides, under the same temperature, an ion source prepared from nanoparticles provides higher vapor pressure and allows a higher implantation dose than when the ion source is prepared from solid lumps, thus expanding the applicability of ion implantation technology.Type: ApplicationFiled: September 16, 2009Publication date: January 20, 2011Applicant: National Central UniversityInventors: Gou-Chung Chi, Ping-Jung Huang, Chung-Wei Chen, Ching-Jen Pan, Yu-Lun Liu, Fu-Chun Tsao
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Publication number: 20070241321Abstract: A light-emitting diode (LED) structure including a substrate, a first type doped semiconductor layer, an active layer, a second type doped semiconductor layer and a transparent conductive layer is provided. The first type doped semiconductor layer is located on the substrate. The active layer is located on the first type doped semiconductor layer. The second type doped semiconductor layer is located on the active layer, and the transparent conductive layer is disposed on the second type doped semiconductor layer. A portion of the transparent conductive layer and the second type doped semiconductor layer underneath the transparent conductive layer are removed by etching, so as to make the transparent conductive layer to be a mesh structure and to make a surface of the second type doped semiconductor layer to be a rough surface. The occurrence of total internal reflection inside the LED is reduced.Type: ApplicationFiled: October 13, 2006Publication date: October 18, 2007Applicant: National Central UniversityInventors: Cheng-Huang Kuo, Gou-Chung Chi, Chao-Min Chen
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Patent number: 7009185Abstract: The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer. Finally, an annular and a circular metallic layer are formed between the P-type GaN layer and the first N-type GaN layer as well as inside the second N-type GaN layer, respectively, to serve for respective ohmic contact layers. The present invention is characterized in that an incident light can project upon a depletion layer of the GaN planar structure to have the detection efficiency significantly improved.Type: GrantFiled: July 19, 2003Date of Patent: March 7, 2006Assignee: National Central UniversityInventors: Gou-Chung Chi, Iinn-Kong Sheu, Meng-Che Chen, Min-Lum Lee
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Publication number: 20040195518Abstract: The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using epitaxial method. By availing ion-distribution-and-vegetation technology, a first N-type GaN layer is vegetated and invested in the P-type GaN layer by distributing and vegetating Si+ ions in that layer, and a second N-type GaN layer having a thicker ion concentration is invested in the N-type GaN layer. Finally, an annular and a circular metallic layer are formed between the P-type GaN layer and the first N-type GaN layer as well as inside the second N-type GaN layer, respectively, to serve for respective ohmic contact layers. The present invention is characterized in that an incident light can project upon a depletion layer of the GaN planar structure to have the detection efficiency significantly improved.Type: ApplicationFiled: July 19, 2003Publication date: October 7, 2004Inventors: Gou-Chung Chi, Iinn-Kong Sheu, Meng-Che Chen, Min-Lum Lee
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Patent number: 5075749Abstract: Substrate-supported optical device structures such as, e.g., quantum-well infrared detectors/detector arrays are provided with a grating for optical coupling. Preferred gratings are formed in a nonepitaxial layer which, preferably, consists of a material which is different from underlying semiconductor material. Conveniently, a grating pattern is formed by etching, with the underlying material serving as an etch stop. For example, on a GaAs--AlGaAs device, polycrystalline silicon can be deposited and etched in this fashion.Type: GrantFiled: April 1, 1991Date of Patent: December 24, 1991Assignee: AT&T Bell LaboratoriesInventors: Gou-Chung Chi, James N. Hollenhorst, Robert A. Morgan, Dirk J. Muehlner
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Patent number: 4819039Abstract: Semiconductor devices are described which are made by a process involving the use of certain types of glass layers. These glass layers have high silica content, small amounts of boron oxide and optionally small amounts of aluminum oxide. The glass layers are put down by e-beam deposition procedure using a glass target made from restructured glass. Commercial availability of such glass makes the procedure very convenient. Such glass layers are advantageously used as barrier layers in annealing procedures used when semiconductors are doped (e.g., ion implantation in semiconductors) and as encapsulating layers in finished devices.Type: GrantFiled: December 22, 1986Date of Patent: April 4, 1989Assignee: American Telephone and Telegraph Co. AT&T LaboratoriesInventors: Gou-Chung Chi, Shobha Sing, LeGrand G. Van Uitert, George J. Zydzik