Abstract: A reference voltage generator circuit comprises a band gap circuit and a level correction regulator circuit. The band gap circuit generates output voltages REF 1, REF 2 having temperature dependence according to each of the write/erase mode and verify/read mode by setting the resistance values of resistors, and one of the output voltages is selected by a transfer gate and is regarded as REF. The level correction regulator circuit generates, based on the output REF, an output voltage OUT (reference voltage) on a level which is required for each mode. By virtue of the above construction, a level correction regulator circuit and one band gap circuit can constitute a reference voltage generator circuit for a nonvolatile memory which can realize temperature characteristics according to each mode while reducing the layout area.

Abstract: A reference voltage generator circuit comprises a band gap circuit and a level correction regulator circuit. The bard gap circuit generates output voltages REF 1, REF 2 having temperature dependence according to each of write/erase mode and verify/read mode by setting the resistance values of resistors, and one of the output voltages is selected by a transfer gate and is regarded as REF. The level correction regulator circuit generates, based on the output REF, an output voltage OUT (reference voltage) on a level which is required for each mode. By virtue of the above construction, a level correction regulator circuit and one band gap circuit can constitute a reference voltage generator circuit for a nonvolatile memory which can realize temperature characteristics according to each mode while reducing the layout area.