Patents by Inventor Gouri Radhakrishnan

Gouri Radhakrishnan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150357649
    Abstract: A battery is provided with a special form of conductive substrate that does not include the use of a conventional metal such that the overall weight of the battery is substantially reduced. Instead, the battery, such as the anode portion of the battery, includes a conductive base substrate made from a non-metallic, electrically conductive material. A coating material is deposited onto the base substrate, wherein the coating material includes at least one active material that is directly applied onto the base substrate.
    Type: Application
    Filed: June 5, 2014
    Publication date: December 10, 2015
    Inventors: Gouri RADHAKRISHNAN, Michael V. QUINZIO
  • Patent number: 8388924
    Abstract: The present application relates generally to methods for growth of high quality graphene films. In particular, a method is provided for forming a graphene film using a modified chemical vapor deposition process using an oxygen-containing hydrocarbon liquid precursor. Desirably, the graphene films are a single-layer and have a single grain continuity of at least 1 ?m2.
    Type: Grant
    Filed: April 21, 2011
    Date of Patent: March 5, 2013
    Assignee: The Aerospace Corporation
    Inventors: Gouri Radhakrishnan, Paul Michael Adams
  • Publication number: 20120269717
    Abstract: The present application relates generally to methods for growth of high quality graphene films. In particular, a method is provided for forming a graphene film using a modified chemical vapor deposition process using an oxygen-containing hydrocarbon liquid precursor. Desirably, the graphene films are a single-layer and have a single grain continuity of at least 1 ?m2.
    Type: Application
    Filed: April 21, 2011
    Publication date: October 25, 2012
    Applicant: THE AEROSPACE CORPORATION
    Inventors: Gouri Radhakrishnan, Paul Michael Adams
  • Patent number: 8284012
    Abstract: A method of fabricating a thin film resistor including providing a substrate, using a low-temperature pulsed-laser deposition process to deposit a titanium carbide (TiC) layer on the substrate, removing portions of the TiC layer with an etching process to leave a TiC pattern on the substrate, and depositing conductive material on opposite ends of the TiC pattern to provide a thin film resistor.
    Type: Grant
    Filed: June 4, 2009
    Date of Patent: October 9, 2012
    Assignee: The Aerospace Corporation
    Inventors: Robert C. Cole, Gouri Radhakrishnan
  • Publication number: 20100308955
    Abstract: A method of fabricating a thin film resistor including providing a substrate, using a low-temperature pulsed-laser deposition process to deposit a titanium carbide (TiC) layer on the substrate, removing portions of the TiC layer with an etching process to leave a TiC pattern on the substrate, and depositing conductive material on opposite ends of the TiC pattern to provide a thin film resistor.
    Type: Application
    Filed: June 4, 2009
    Publication date: December 9, 2010
    Inventors: Robert C. Cole, Gouri Radhakrishnan
  • Publication number: 20100288530
    Abstract: A method includes imparting energy to a target in an oxygen-containing atmosphere at room temperature to provide a substrate facing the target with a carbonaceous coating that includes nested carbon structures.
    Type: Application
    Filed: July 22, 2010
    Publication date: November 18, 2010
    Inventors: Gouri Radhakrishnan, Paul M. Adams, Franklin D. Ross
  • Patent number: 7790243
    Abstract: A method includes imparting energy to a target in an oxygen-containing atmosphere at room temperature to provide a substrate facing the target with a carbonaceous coating that includes nested carbon structures.
    Type: Grant
    Filed: July 19, 2006
    Date of Patent: September 7, 2010
    Assignee: The Aerospace Corporation
    Inventors: Gouri Radhakrishnan, Paul M. Adams, Franklin D. Ross
  • Publication number: 20100068501
    Abstract: A method includes imparting energy to a target in an oxygen-containing atmosphere at room temperature to provide a substrate facing the target with a carbonaceous coating that includes nested carbon structures.
    Type: Application
    Filed: July 19, 2006
    Publication date: March 18, 2010
    Inventors: Gouri Radhakrishnan, Paul M. Adams, Franklin D. Ross
  • Patent number: 7241475
    Abstract: Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a bulk or thin film of a compound, such as titanium carbide.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: July 10, 2007
    Assignee: The Aerospace Corporation
    Inventor: Gouri Radhakrishnan
  • Publication number: 20060068125
    Abstract: Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a bulk or thin film of a compound, such as titanium carbide.
    Type: Application
    Filed: September 30, 2004
    Publication date: March 30, 2006
    Inventor: Gouri Radhakrishnan
  • Patent number: 6024851
    Abstract: The present invention relies upon a free space magnetic field in a pulsed laser deposition (PLD) chamber for forming high quality thin films made from diverted ions from a plume evaporated from an ablated target illuminated by a pulsed laser beam. The magnetic field exerts a qv X B Lorentz force upon the ions that is orthogonal to the magnetic field and to their direction of travel in the plume, and curves the ions toward the substrate, while neutral particulates continue to pass by the substrate so that the large neutral particulates are not deposited on the substrate. A shield prevents the deposition of plume species in direct line of sight between the target and the substrate so that only charged ions curved by the magnet are deposited on the substrate. A permanent magnet is used to separate charged species from neutral species.
    Type: Grant
    Filed: June 2, 1998
    Date of Patent: February 15, 2000
    Assignee: The Aerospace Corporation
    Inventor: Gouri Radhakrishnan
  • Patent number: 5858478
    Abstract: The present invention relies upon a free space magnetic field in a pulsed laser deposition (PLD) chamber for forming high quality thin films made from diverted ions from a plume evaporated from an ablated target illuminated by a pulsed laser beam. The magnetic field exerts a qv.times.B Lorentz force upon the ions that is orthogonal to the magnetic field and to their direction of travel in the plume, and curves the ions toward the substrate, while neutral particulates continue to pass by the substrate so that the large neutral particulates are not deposited on the substrate. A shield prevents the deposition of plume species in direct line of sight between the target and the substrate so that only charged ions curved by the magnet are deposited on the substrate. A permanent magnet is used to separate charged species from neutral species.
    Type: Grant
    Filed: December 2, 1997
    Date of Patent: January 12, 1999
    Assignee: The Aerospace Corporation
    Inventor: Gouri Radhakrishnan
  • Patent number: 5650361
    Abstract: Thin films of aluminum nitride are deposited at 350 K on silicon, GaAs, fused quartz, and KBr substrates using gas-phase 193 nm excimer laser photolysis of trimethylamine alane and ammonia precursors without a thermally induced or a spontaneous reaction between them, resulting in AlN thin films that are amorphous, smooth and featureless having a band gap of 5.8 eV, a refractive index of 2.0, a breakdown electric field breakdown of 10.sup.8 V/m, a low-frequency dielectric constant of 6.0-6.9, high-frequency dielectric constant of 3.9-4.0, well suited for many thin film applications.
    Type: Grant
    Filed: November 21, 1995
    Date of Patent: July 22, 1997
    Assignee: The Aerospace Corporation
    Inventor: Gouri Radhakrishnan
  • Patent number: 5332879
    Abstract: A technique is described for the removal of trace metal contaminants from organic dielectrics such as polyimide. Pulsed ultraviolet radiation is used to remove the contaminants from the dielectric, regardless of their chemical nature, by the process of ablation. The process allows prepatterned bulk metal features to be simultaneously exposed to the pulsed radiation and yet remain unaffected.
    Type: Grant
    Filed: December 2, 1992
    Date of Patent: July 26, 1994
    Assignee: The Aerospace Corporation
    Inventors: Gouri Radhakrishnan, Heinrich G. Muller