Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate and a second substrate are stacked on top of each other includes a substrate holder configured to hold the combined substrate; a laser radiating unit configured to radiate laser light to a laser absorbing film in a pulse shape; a moving mechanism configured to move the substrate holder and the laser radiating unit relative to each other; and a controller configured to control the laser radiating unit and the moving mechanism. The controller performs, based on a thickness of the laser absorbing film, a control of selecting a position of a separation surface between the first substrate and the second substrate from one of a position between the first substrate and the laser absorbing film or a position between the a separation facilitating film and the second substrate.

Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate, an interface layer including at least a laser absorbing film, and a second substrate are stacked on top of each other includes a substrate holder configured to hold the combined substrate; an interface laser radiating unit configured to radiate laser light to the laser absorbing film in a pulse shape; a moving mechanism configured to move the substrate holder and the interface laser radiating unit relative to each other; and a controller. The controller performs a control of acquiring information of the interface layer formed in the combined substrate, and a control of setting, based on the acquired information of the interface layer, a bonding interface having a weakest adhesive strength among bonding interfaces in the interface layer as a separation interface between the first substrate and the second substrate.

Abstract: There is provided a resist composition including: a polymer component that is capable of being made soluble or insoluble in a developer by an action of an acid; an acid-generating agent configured to generate the acid by an exposure; and a quencher having a basicity for the acid, wherein, with respect to a first radiation having a wavelength of 300 nm or less and a second radiation having a wavelength of more than 300 nm, at least one of the acid-generating agent and the quencher has a light absorption wavelength, which is shifted so as to absorb the second radiation when irradiated with the first radiation and not irradiated with the second radiation, is decomposed when irradiated with the first radiation and then irradiated with second irradiation, and is not decomposed when not irradiated with the first irradiation and irradiated with the second radiation.

Abstract: An illuminance distribution response amount as the change amount of the illuminance distribution pattern, associating the position in the irradiation region in the lengthwise direction with the change amount of the illuminance with respect to the change in the drive current, has previously been acquired and stored in a storage unit for each light-emitting block. There is provided an arithmetic processing unit that determines (estimates) a current command value of each of the light-emitting blocks based on a present current command value of each of the light-emitting blocks and the change amount of the illuminance distribution pattern of each light-emitting block in order to bring a present illuminance distribution pattern in the irradiation region in a lengthwise direction close to a target illuminance distribution pattern.

Abstract: This resist pattern forming method comprises: a step for coating a substrate with a chemically amplified resist; a subsequent step for forming a latent image of a pattern by exposing the resist film on the substrate; a subsequent step for irradiating the exposed resist film selectively with infrared light from a first heating source having wavelengths 2.0-6.0 ?m; a subsequent step for heating the substrate by means of a second heating source that is different from the first heating source for the purpose of diffusing an acid that is produced in the resist film by exposure; and a subsequent step for forming a pattern of the resist film by supplying a developer liquid to the substrate. Consequently, roughening of sidewalls of the resist pattern can be suppressed.

Abstract: An exposure apparatus includes: a stage on which a substrate is placed; a plurality of light irradiation units configured to emit light independently of each other, so as to form a strip-like irradiation area; a rotation mechanism configured to rotate the substrate relative to the irradiation area; a stage moving mechanism configured to move the stage relative to the irradiation area in a back and forth direction; and a control unit configured to make the exposure apparatus perform a first step that rotates the substrate relative to the irradiation area having a first illuminance distribution such that the whole surface of the substrate is exposed, and a second step that moves the substrate in the back and forth direction relative to the irradiation area having a second illuminance distribution while rotation of the substrate is being stopped, such that the whole surface of the substrate is exposed.

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Abstract: An illuminance distribution response amount as the change amount of the illuminance distribution pattern, associating the position in the irradiation region in the lengthwise direction with the change amount of the illuminance with respect to the change in the drive current, has previously been acquired and stored in a storage unit for each light-emitting block. There is provided an arithmetic processing unit that determines (estimates) a current command value of each of the light-emitting blocks based on a present current command value of each of the light-emitting blocks and the change amount of the illuminance distribution pattern of each light-emitting block in order to bring a present illuminance distribution pattern in the irradiation region in a lengthwise direction close to a target illuminance distribution pattern.

Abstract: An exposure apparatus includes: a stage on which a substrate is placed; a plurality of light irradiation units configured to emit light independently of each other to different positions in a right and left direction on a surface of the substrate, so as to form a strip-like irradiation area extending from one end of the surface of the substrate to the other end of the substrate; a rotation mechanism configured to rotate the substrate placed on the stage relative to the irradiation area; a stage moving mechanism configured to move the stage relative to the irradiation area in a back and forth direction; and a control unit configured to output control signals that make said exposure apparatus perform a first step that rotates the substrate relative to the irradiation area having a first illuminance distribution such that the whole surface of the substrate is exposed, and a second step that moves the substrate in the back and forth direction relative to the irradiation area having a second illuminance distributi

Abstract: A light irradiation apparatus includes: a rotary holding unit that rotates a substrate around a rotary axis while holding the substrate; a lighting unit positioned to face the rotary holding unit; a light shielding mask positioned between the rotary holding unit and the lighting unit, and widened along a direction orthogonal to the rotary axis; and a driving unit that linearly moves the lighting unit along the direction orthogonal to the rotary axis. The light shielding mask overlaps with the substrate when viewed in the direction of the rotary axis. The light shielding mask has an opening portion. An opening width of the opening portion at a side away from the rotary axis is larger than the opening with near the rotary axis. The lighting unit irradiates light through the opening portion toward the surface of the substrate while being moved above the opening portion by the driving unit.

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Abstract: A light irradiation apparatus includes: a rotary holding unit that rotates a substrate around a rotary axis while holding the substrate; a lighting unit positioned to face the rotary holding unit; a light shielding mask positioned between the rotary holding unit and the lighting unit, and widened along a direction orthogonal to the rotary axis; and a driving unit that linearly moves the lighting unit along the direction orthogonal to the rotary axis. The light shielding mask overlaps with the substrate when viewed in the direction of the rotary axis. The light shielding mask has an opening portion. An opening width of the opening portion at a side away from the rotary axis is larger than the opening with near the rotary axis. The lighting unit irradiates light through the opening portion toward the surface of the substrate while being moved above the opening portion by the driving unit.

Abstract: This resist pattern forming method comprises: a step for coating a substrate with a chemically amplified resist; a subsequent step for forming a latent image of a pattern by exposing the resist film on the substrate; a subsequent step for irradiating the exposed resist film selectively with infrared light from a first heating source having wavelengths 2.0-6.0 ?m; a subsequent step for heating the substrate by means of a second heating source that is different from the first heating source for the purpose of diffusing an acid that is produced in the resist film by exposure; and a subsequent step for forming a pattern of the resist film by supplying a developer liquid to the substrate. Consequently, roughening of sidewalls of the resist pattern can be suppressed.

Abstract: There is provided a semiconductor device manufacturing apparatus capable of recovering a damage of a low dielectric insulating film exposed to CO2 plasma to obtain the low dielectric insulating film in a good state, thus improving performance and reliability of a semiconductor device. The semiconductor device manufacturing apparatus includes: an etching processing mechanism for performing an etching process that etches a low dielectric insulating film formed on a substrate; a CO2 plasma processing mechanism for performing a CO2 plasma process that exposes the substrate to CO2 plasma after the etching process; a polarization reducing mechanism for performing a polarization reducing process that reduces polarization in the low dielectric insulating film after the CO2 plasma process; and a transfer mechanism for transferring the substrate.

Abstract: A resist film processing unit is disclosed that can improve an etching resistance of a resist film formed on a substrate. The resist film processing unit includes a light source to irradiate an ultraviolet light on a resist film patterned by a development process, a heating part configured to heat the resist film irradiated with the ultraviolet light by the light source, and a solvent processing unit configured to expose the resist film to a solvent gas including a solvent that contains a benzene ring, during or after heating of the resist film by the heating part.

Abstract: There is provided a semiconductor device manufacturing apparatus capable of recovering a damage of a low dielectric insulating film exposed to CO2 plasma to obtain the low dielectric insulating film in a good state, thus improving performance and reliability of a semiconductor device. The semiconductor device manufacturing apparatus includes: an etching processing mechanism for performing an etching process that etches a low dielectric insulating film formed on a substrate; a CO2 plasma processing mechanism for performing a CO2 plasma process that exposes the substrate to CO2 plasma after the etching process; a polarization reducing mechanism for performing a polarization reducing process that reduces polarization in the low dielectric insulating film after the CO2 plasma process; and a transfer mechanism for transferring the substrate.

Abstract: There is provided a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of recovering a damage of a low dielectric insulating film exposed to CO2 plasma to obtain the low dielectric insulating film in a good state, thus improving performance and reliability of a semiconductor device. The semiconductor device manufacturing method includes: an etching process for etching a low dielectric insulating film formed on a substrate; a CO2 plasma process for exposing the substrate to CO2 plasma after the etching process; and a UV process for irradiating UV to the low dielectric insulating film after the CO2 plasma process.

Abstract: A resist film processing unit is disclosed that can improve an etching resistance of a resist film formed on a substrate. The resist film processing unit includes a light source to irradiate an ultraviolet light on a resist film patterned by a development process, a heating part configured to heat the resist film irradiated with the ultraviolet light by the light source, and a solvent processing unit configured to expose the resist film to a solvent gas including a solvent that contains a benzene ring, during or after heating of the resist film by the heating part.