Abstract: An extreme ultraviolet light generation apparatus may include a chamber, a first partition wall covering a plasma generation region in the chamber and having a first opening, an EUV light concentrating mirror located in a first space inside the chamber and outside the first partition wall and configured to concentrate extreme ultraviolet light generated in the plasma generation region and having passed through the first opening, a first gas supply port formed at the chamber and configured to supply gas to the first space, and a gas exhaust port formed in the first partition wall and configured to exhaust gas in a second space inside the first partition wall to outside of both the first partition wall and the chamber.

Abstract: An extreme ultraviolet light generation system includes a chamber, a target supply unit supplying a target substance to a plasma generation region including a first point in the chamber, a window allowing pulse laser light with which the target substance is irradiated to pass therethrough, an EUV light concentrating mirror concentrating extreme ultraviolet light generated at the first point on a second point, a planar mirror arranged on an optical path of the extreme ultraviolet light reflected by the EUV light concentrating mirror and between the first and second points, an actuator causing the second point to be switched between a first position and a second position, a connection portion connectable to an external apparatus, a first EUV measurement unit on which the extreme ultraviolet light having passed through the second position is incident, and a processor controlling the actuator based on a signal from the external apparatus.

Abstract: A cleaning method for an extreme ultraviolet light reflection mirror includes a contacting step of bringing ?-tin into contact with solid tin debris attached to an extreme ultraviolet light reflection mirror and an aging step of leaving the tin debris brought into contact with the ?-tin in a temperature environment below a freezing point to promote turning into tin pest of the tin debris. The cleaning method further includes a removing step of removing the tin debris turned into tin pest from the extreme ultraviolet light reflection mirror.

Abstract: A tin trap device may include a housing including a gas inlet port into which gas containing tin flows from a chamber device, an internal space which communicates with the gas inlet port, and a gas exhaust port which exhausts the gas while communicating with the internal space; a multiple tube including a plurality of tube members, arranged on a flow path of the gas traveling to the gas exhaust port from the gas inlet port through the internal space, and having a temperature at which the tin deposited from the gas adheres to the tube member; and a gas travel direction changing member configured to change a travel direction of at least fastest gas of the gas traveling from the gas inlet port to the multiple tube.

Abstract: A tin trap device may include a housing including a gas inlet port into which gas containing tin flows from a chamber device, an internal space which communicates with the gas inlet port, and a gas exhaust port which exhausts the gas while communicating with the internal space; a multiple tube including a plurality of tube members, arranged on a flow path of the gas traveling to the gas exhaust port from the gas inlet port through the internal space, and having a temperature at which the tin deposited from the gas adheres to the tube member; and a gas travel direction changing member configured to change a travel direction of at least fastest gas of the gas traveling from the gas inlet port to the multiple tube.

Abstract: An extreme ultraviolet light generation apparatus may include a chamber, a first partition wall covering a plasma generation region in the chamber and having a first opening, an EUV light concentrating mirror located in a first space inside the chamber and outside the first partition wall and configured to concentrate extreme ultraviolet light generated in the plasma generation region and having passed through the first opening, a first gas supply port formed at the chamber and configured to supply gas to the first space, and a gas exhaust port formed in the first partition wall and configured to exhaust gas in a second space inside the first partition wall to outside of both the first partition wall and the chamber.