Patents by Inventor Goya Saneyuki

Goya Saneyuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050103377
    Abstract: A process for producing a solar cell is provided which can enhance the photovoltaic conversion efficiency by enlarging the grain sizes in the direction of the thickness of an i-layer to reduce grain boundaries, thereby avoiding recombination of carriers and activating the dopant at the same time. A process for producing a solar cell includes depositing at least a first transparent electrode, polycrystalline silicon layers in a PIN structure, and a second electrode in sequence on an electrically insulating substrate, the polycrystalline silicon layers in a PIN structure including a p-type silicon layer, an i-type silicon layer, and an n-type silicon layer, wherein the polycrystalline silicon layers in a PIN structure are formed by: forming a p-type, which is then subjected to thermal annealing; depositing an i-type silicon layer on the p-type silicon layer; and depositing an n-type silicon layer on the i-type silicon layer.
    Type: Application
    Filed: October 21, 2004
    Publication date: May 19, 2005
    Inventors: Goya Saneyuki, Nakano Youji, Miyamoto Yoshiki