Patents by Inventor Grógory Bidal

Grógory Bidal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating a transistor with semiconductor gate combined locally with a metal
    Patent number: 8227342
    Abstract: A method of forming a field effect transistor comprising a gate formed on an insulating layer, the gate having, in a zone in contact with the insulating layer, a semiconducting central zone and lateral zones in the length of the gate, the method comprising forming a gate comprising a portion of insulating layer, a portion of semiconducting layer formed over the insulating layer, and a portion of mask layer formed over the semiconducting layer; performing an etching of the portion of the mask layer such that only a portion in the center of the gate remains; and reacting the semiconducting gate with a metal deposited over the gate.
    Type: Grant
    Filed: January 10, 2008
    Date of Patent: July 24, 2012
    Assignees: STMicroelectronics (Crolles 2) SAS, NXP B.V. (Dutch Corporation)
    Inventors: Markus Müller, Grógory Bidal