Abstract: The present invention is related to compositions and methods for the regulated and controlled expression of proteins.

Abstract: Characterization of drug-drug interaction properties and pharmacological properties of maribavir is useful to inform potential drug-drug interactions and dosing strategies when administering with co-medications.

Abstract: Disclosed is a composition for disinfecting the hands, including: a) at least one alcohol including from one to four carbon atoms, b) at least one water-in-oil emulsion containing: —a crosslinked anionic polyelectrolyte (P); —a fatty phase consisting of at least one oil (H), —water, —a water-in-oil emulsifying system (S1), and—an oil-in-water emulsifying system (S2); c) at least one compound of formula (II): R2—(C?O)—O—(CH2—CH2—O)x—CH2—CH[(O—CH2—CH2)y—O—(C?O)—R3]—CH2—(O—CH2—CH2)2—O—(C?O)—R4 (II), wherein R2—(C?O), R3—(C?O) and R4—(C?O), identical or different, represent a saturated or unsaturated, linear or branched acyl group including from 16 to 24 carbon atoms, and wherein the sum x+y+z is greater than or equal to 30 and less than or equal to 100; and d) water.

Abstract: The present application discloses a LED therapeutic device comprising a top case, a light assembly, a controller, a switch assembly, a bottom case and a power supply. The light assembly comprises a lens and a LED assembly, wherein the lens is coupled to the top case and the LED assembly comprises at least one visible light LED and at least one infrared LED. The controller is coupled to the light assembly. The switch assembly is coupled to the controller. The bottom case is removably coupled to the top case. The power supply is electrically coupled to the controller.

Abstract: The present application discloses a LED therapeutic device comprising a top case, a light assembly, a controller, a switch assembly, a bottom case and a power supply. The light assembly comprises a lens and a LED assembly, wherein the lens is coupled to the top case and the LED assembly comprises three visible light LEDs and two infrared LEDs. Wavelengths of the three visible light LEDs are 470 nm, 630 nm and 660 nm. Wavelengths of the two infrared LEDs are 850 nm and 940 nm. The controller is coupled to the light assembly. The switch assembly is coupled to the controller. The bottom case is removably coupled to the top case. The power supply is electrically coupled to the controller.

Abstract: A waveguide coupler includes a coupling section which evanescently couples an optical signal, received from an input waveguide, with an absorbing waveguide. Structurally, the coupling section is an elongated waveguide with one end butt-coupled to the input waveguide. Further, the coupling section defines an engagement side edge which is positioned at a predetermined distance from a dimensionally compatible side surface area of the absorbing waveguide. In this combination, evanescence from the optical signal is directed laterally from the coupling section, through the engagement side edge of the coupling section, and through an assisting component, to the absorbing waveguide for use with a photodetector.

Abstract: An exterior building component with a distinct surface topography and a method for manufacturing the same. A substrate, a barrier film, and an adhesive are provided together with a finishing sacrificial coating. The adhesive has pressure sensitive characteristics in a temperature range including a temperature below barrier film embossment temperature. The temperature of a surface of the substrate and the barrier film is adjusted to the barrier film embossment temperature. The adhesive is disposed onto at least one of the surface of the substrate and the barrier film. The barrier film is then disposed onto the surface of the substrate and embossed such that the surface topography of the substrate is replicated in a substantially identical fashion using a roller at low pressure and short pressure application time. The barrier film is then, if needed, finished with a weather-resistant coating compatible with commercially available architectural exterior paints and lacquers for refinishing as required.

Abstract: An exterior building component with a distinct surface topography and a method for manufacturing the same. A substrate, a barrier film, and an adhesive are provided together with a finishing sacrificial coating. The adhesive has pressure sensitive characteristics in a temperature range including a temperature below barrier film embossment temperature. The temperature of a surface of the substrate and the barrier film is adjusted to the barrier film embossment temperature. The adhesive is disposed onto at least one of the surface of the substrate and the barrier film. The barrier film is then disposed onto the surface of the substrate and embossed such that the surface topography of the substrate is replicated in a substantially identical fashion using a roller at low pressure and short pressure application time. The barrier film is then, if needed, finished with a weather-resistant coating compatible with commercially available architectural exterior paints and lacquers for refinishing as required.

Abstract: An electrically conductive adhesive is disclosed for bonding anode and cathode flow field plates together for use in fuel cells. The adhesive formulation comprises epoxy methacrylate resin and non-fibrous carbon particles but little to no carbon fibres. The adhesive provides suitable strength, bond gap, conductivity and other properties, particularly for flow field plates made of flexible graphite, carbon, or metal.

Abstract: An electrically conductive adhesive is disclosed for bonding anode and cathode flow field plates together for use in fuel cells. The adhesive formulation comprises epoxy methacrylate resin and non-fibrous carbon particles but little to no carbon fibres. The adhesive provides suitable strength, bond gap, conductivity and other properties, particularly for flow field plates made of flexible graphite, carbon, or metal.

Abstract: A method for forming damascene interconnect copper diffusion barrier layers includes implanting calcium into the sidewalls of the trenches and vias. The calcium implantation into dielectric layers, such as oxides, is used to prevent Cu diffusion into oxide, such as during an annealing process step. The improved barrier layers of the present invention help prevent delamination of the Cu from the dielectric.

Abstract: An improved semiconductor memory structure and methods for its fabrication are disclosed. The memory structure includes a semiconductor substrate having a dielectric stack formed over a channel region of a semiconductor substrate. The dielectric stack includes a layer of electron trapping material that operates as a charge storage center for memory devices. A gate electrode is connected with the top of the dielectric stack. In various embodiments the electron trapping material forms a greater or lesser portion of the dielectric stack. The invention includes a method embodiment for forming such a memory device.

Abstract: A new relatively high-k gate dielectric gate material comprising calcium oxide will reduce leakage from the silicon substrate to the polysilicon gate, prevent boron penetration in p-channel devices, and reduce electron trapping in the dielectric. The surface of a silicon wafer is saturated with hydroxyl groups. A calcium halide, preferably calcium bromide, is heated to a temperature sufficient to achieve atomic layer deposition, and is transported to the silicon wafer. The calcium halide reacts with the hydroxyl groups. Water is added to carry away the resultant hydrogen halide. Gaseous calcium and water are then added to form a calcium oxide gate dielectric, until the desired thickness has been achieved. In an alternative embodiment of the method, the calcium halide is transported to the silicon wafer to react with the hydroxyl groups, followed by transport of gaseous water to the silicon wafer. These two steps are repeated until the desired thickness has been achieved.

Abstract: A method of creating a barrier to metal contamination in interconnect and gate oxides comprises ion implantation of an alkaline earth metal into the silicon dioxide. The presence of the implanted alkaline earth metal, preferably calcium, traps metal contaminants and thereby creates a barrier to further contamination. Alternatively, the alkaline earth metal can be implanted into the silicon dioxide as a low energy plasma. The implantation of atomic calcium into gate oxide serves to trap boron and thereby minimize boron diffusion from a polysilicon gate into silicon.

Abstract: A new relatively high-k gate dielectric gate material comprising calcium oxide will reduce leakage from the silicon substrate to the polysilicon gate, prevent boron penetration in p-channel devices, and reduce electron trapping in the dielectric. The surface of a silicon wafer is saturated with hydroxyl groups. A calcium halide, preferably calcium bromide, is heated to a temperature sufficient to achieve atomic layer deposition, and is transported to the silicon wafer. The calcium halide reacts with the hydroxyl groups. Water is added to carry away the resultant hydrogen halide. Gaseous calcium and water are then added to form a calcium oxide gate dielectric, until the desired thickness has been achieved. In an alternative embodiment of the method, the calcium halide is transported to the silicon wafer to react with the hydroxyl groups, followed by transport of gaseous water to the silicon wafer. These two steps are repeated until the desired thickness has been achieved.