Abstract: A method by which portions of a wafer level fabrication can be selectively heated by forming plasmon generating layers of specific size, shape, orientation and material on the fabrication and then illuminating the formation with electromagnetic radiation of such wavelength and polarization as will optimally be absorbed by the plasmon generating layers so as to generate plasmons therein. The generated plasmons thereupon produce thermal energy which is transferred to portions of the fabrication with which the plasmon generation layer has thermal contact. This method is particularly advantageous for producing multiple anneals and different magnetic pinning directions for the anti-ferromagnetic pinning layer in each of an array of GMR or TMR devices. In that process, the anti-ferromagnetic layer must be raised above its Curie temperature at which point it loses its anti-ferromagnetic properties and can have a magnetization imposed by application of an external magnetic field.

Abstract: Simultaneous setting of exchange pinning field magnetization in more than one direction for several thin film structures on a single substrate has been achieved by first orienting the structures as needed. A layer of hard magnetic material is then deposited, suitably patterned to control the direction of its flux, and then magnetized through a single exposure to a strong magnetic field. The assemblage is then thermally annealed (in the absence of any applied field) at a temperature higher than the AFM material blocking temperature, following which the thin film structures are magnetically pinned in the intended directions.

Abstract: An apparatus and a general method to measure a magnetic field using magneto-resistive sensors in an open-loop configuration are disclosed. A key feature is the regular in-situ normalization of the sensors to compensate for the effects of sensor aging.

Abstract: The problem of magneto-resistive sensor drift with age has been solved by normalizing the sensor's output relative to its output when it is in a selected reproducible state. Details for the method to accomplish this normalization are disclosed together with several examples of how the method can be utilized.

Abstract: The invention discloses a method and apparatus for determining the rotational status of a gear wheel whether or not it is actually turning. A key feature is the magnetic angle sensor that is used. Said sensor comprises a bridge structure of four MR devices in a square array. The direction of the pinned reference layer is the same for all four devices and lies along one of the diagonals of said square array. A single wafer process is used to manufacture the invented device.

Abstract: Presented herein is a shunted MTJ sensor formed of a plurality of electrically connected MTJ cells for measuring magnetic fields and currents and its method of fabrication. To provide stable single domain magnetic moments of the MTJ cells and to ensure that the magnetic moments return to a fixed bias point in the absence of external magnetic fields, the cells are formed of sufficiently small size and with elliptical cross-section of aspect ratio greater than 1.2. To eliminate the possibility of ESD damage to the cells, they are protected by a parallel shunt, formed as a trace of sufficiently high resistance that directs accumulated charges harmlessly to ground while bypassing the cells.

Abstract: A method by which portions of a wafer level fabrication can be selectively heated by means of the formation of a plasmon generating layers of specific size, shape, orientation and material on the fabrication and then illuminating the formation with electromagnetic radiation of such wavelength and polarization as will optimally be absorbed by the plasmon generating layers so as to generate plasmons therein. The generated plasmons thereupon produce thermal energy which is transferred to portions of the fabrication with which the plasmon generation layer has thermal contact. This method is particularly advantageous for producing multiple anneals and different magnetic pinning directions for the anti-ferromagnetic pinning layer in each of an array of GMR or TMR devices. In that process, the anti-ferromagnetic layer must be raised above its Curie temperature at which point it loses its anti-ferromagnetic properties and can have a magnetization imposed by application of an external magnetic field.

Abstract: An apparatus and a general method to measure a magnetic field using magneto-resistive sensors in an open-loop configuration are disclosed. A key feature is the regular in-situ normalization of the sensors to compensate for the effects of sensor aging.

Abstract: The problem of magneto-resistive sensor drift with age has been solved by normalizing the sensor's output relative to its output when it is in a selected reproducible state. Details for the method to accomplish this normalization are disclosed together with several examples of how the method can be utilized.

Abstract: Presented herein is a shunted MTJ sensor formed of a plurality of electrically connected MTJ cells for measuring magnetic fields and currents and its method of fabrication. To provide stable single domain magnetic moments of the MTJ cells and to ensure that the magnetic moments return to a fixed bias point in the absence of external magnetic fields, the cells are formed of sufficiently small size and with elliptical cross-section of aspect ratio greater than 1.2. To eliminate the possibility of ESD damage to the cells, they are protected by a parallel shunt, formed as a trace of sufficiently high resistance that directs accumulated charges harmlessly to ground while bypassing the cells.

Abstract: The invention discloses a method and apparatus for determining the rotational status of a gear wheel whether or not it is actually turning. A key feature is the magnetic angle sensor that is used. Said sensor comprises a bridge structure of four MR devices in a square array. The direction of the pinned reference layer is the same for all four devices and lies along one of the diagonals of said square array. A single wafer process is used to manufacture the invented device.

Abstract: The invention discloses a rotation sensor suitable for gear wheels. MR (magneto-resistive) sensors are placed inside a zero field region generated by at least two permanent magnets. The sensors are divided into two groups that are immersed in different locally generated magnetic environments. A differential signal taken between the two groups then senses the movement of the wheel's teeth. A single wafer method for manufacturing the device is also briefly described.

Abstract: The invention discloses a rotation sensor suitable for gear wheels. MR (magneto-resistive) sensors are placed inside a zero field region generated by at least two permanent magnets. Said sensors are divided into two groups that are immersed in different locally generated magnetic environments. A differential signal taken between the two groups then senses the movement of the wheel's teeth. A single wafer method for manufacturing the device is also briefly described.

Abstract: An AMR gear tooth rotation sensor and a method for utilizing it are disclosed. These facilitate easy manufacture of the device without sacrificing either high sensitivity or high signal output. This is achieved by forming individual sensing elements out of AMR stripes and then connecting four such sensing elements as a Wheatstone bridge. The latter is attached to a permanent magnet that provides a bias field whose value rises and falls as wheel teeth and valleys (respectively) move past the rotation sensor.

Abstract: An integrated angular magnetic sensor apparatus for determining a magnetic field angle within two axes of a plane is formed on a substrate onto which two anisotropic magneto-resistive sensing elements and at least one magneto-resistive sensing element are fabricated. The two anisotropic magneto-resistive sensing elements are oriented such that the output voltages of a first and second of the anisotropic magneto-resistive sensing elements are a function of a first and second trigonometric function (a sine function) of the magnetic field angle to a reference axis. The at least one magneto-resistive sensing element on the substrate and having a fixed reference magnetization oriented with respect to the reference axis such that an output voltage of the at least one magneto-resistive sensing element provides a quadrant indicator for the magnetic field angle with respect to the reference axis. The quadrant indicator is a trigonometric function such as a sine or cosine function.

Abstract: Simultaneous setting of exchange pinning field magnetization in more than one direction for several thin film structures on a single substrate has been achieved by first orienting the structures as needed. A layer of hard magnetic material is then deposited, suitably patterned to control the direction of its flux, and then magnetized through a single exposure to a strong magnetic field. The assemblage is then thermally annealed (in the absence of any applied field) at a temperature higher than the AFM material blocking temperature, following which the thin film structures are magnetically pinned in the intended directions.

Abstract: The process margin for the manufacture of devices formed from multi-element MTJ or GMR devices has been widened by providing a method and structure to reset the magnetization directions of all pinned layers simultaneously so that their directions of magnetization become evenly distributed. This has the effect of minimizing non-linearity and hysteresis in these devices during their subsequent operation.

Abstract: The invention discloses a sensor for 360-degree magnetic field angle measurement. It comprises multiple GMR (or MTJ) stripes with identical geometries except for their orientations. These are used as the building blocks for a pair of Wheatstone bridges that signal the direction of magnetization of their environment. The design greatly enhances sensitivity within GMR stripes and does not require an additional Hall sensor in order to cover the full 360 degree measurement range.

Abstract: A method of forming a waveguide comprising the following steps. A structure is provided. An underclad layer is formed over the structure and a core layer is formed over the underclad layer. Patterning: the core layer to form the waveguide; and partially into the underclad layer, forming an overetched underclad layer having a projection underneath the waveguide. The waveguide having stress gradients and the overetched underclad layer having stress gradients.