Patents by Inventor Graham A. Garcia
Graham A. Garcia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240129681Abstract: In general, various aspects of the techniques are directed to rescaling audio element for extended reality scene playback. A device comprising a memory and processing circuitry may be configured to perform the techniques. The memory may store an audio bitstream representative of an audio element in an extended reality scene. The processing circuitry may obtain a playback dimension associated with a physical space in which playback of the audio bitstream is to occur, and obtain a source dimension associated with a source space for the extended reality scene. The processing circuitry may modify, based on the playback dimension and the source dimension, a location of the audio element to obtain a modified location for the audio element, and render, based on the modified location for the audio element, the audio element to one or more speaker feeds. The processing circuitry may output the one or more speaker feeds.Type: ApplicationFiled: October 12, 2022Publication date: April 18, 2024Inventors: Isaac Garcia Munoz, Alex Tung, Graham Bradley Davis, Andre Schevciw
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Publication number: 20240114312Abstract: A device configured to process a bitstream may implement the techniques. The device comprises a memory configured to store the bitstream representative of at least one audio element in an extended reality scene, and audio descriptive information associated with the at least one audio element. The device also comprises processing circuitry coupled to the memory and configured to execute a scene manager and an audio unit. The scene manager is configured to construct, based on the at least one audio element, a scene graph that includes at least one node that represents the at least one audio element, and modify, based on the scene graph, the audio descriptive information to obtain modified audio descriptive information. The audio unit is configured to render, based on the modified audio descriptive information, the at least one audio element to one or more speaker feeds, and output the one or more speaker feeds.Type: ApplicationFiled: September 15, 2023Publication date: April 4, 2024Inventors: Imed Bouazizi, Thomas Stockhammer, Isaac Garcia Munoz, Nikolai Konrad Leung, Andre Schevciw, Graham Bradley Davis
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Patent number: 6703647Abstract: A high gain phototransistor uses lateral and vertical transistor structures and a triple base. The base regions of two vertical structures are in the bulk of a semiconductor substrate while the base of a single lateral structure is adjacent a light receiving phototransistor surface. Minority carrier generation extends from the base region of the lateral transistor to the base regions of the vertical transistors and is present in the vertical regions within a diffusion length of the optically generated carriers of the lateral base. The bases of all three transistor structures are electrically connected. The collector electrodes of one of the vertical structures and the lateral structure are electrically connected, while the emitter electrodes of the other of the vertical structures and the lateral structures are electrically connected. Finally, the remaining vertical collector and emitter electrodes are electrically connected via a buried layer adjacent the phototransistor wafer substrate.Type: GrantFiled: April 22, 2002Date of Patent: March 9, 2004Assignee: The United States of America as represented by the Secretary of the NavyInventors: Graham A. Garcia, George P. Imthurn
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Patent number: 6667711Abstract: The invention is designed to employ one or a multitude of sensors designed to allow operational monitoring of any of a variety of electromagnetic radiating tubes. Monitoring is conducted to detect a degradation in performance which can be used as a factor in deciding whether tube replacement is justified. Contrary to some past approaches that focused on averaged tube outputs, the invention is designed to examine individual tube pulses.Type: GrantFiled: November 20, 2002Date of Patent: December 23, 2003Assignee: The United States of America as represented by the Secretary of the NavyInventors: Narayan R. Joshi, David W. Brock, Stephen D. Russell, Shannon D. Kasa, Graham A. Garcia
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Patent number: 6165801Abstract: A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.Type: GrantFiled: November 18, 1999Date of Patent: December 26, 2000Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael J. Burns, Paul R. de la Houssaye, Graham A. Garcia, Stephen D. Russell, Stanley R. Clayton, Andrew T. Barfknecht
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Patent number: 6051846Abstract: A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.Type: GrantFiled: April 1, 1993Date of Patent: April 18, 2000Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael J. Burns, Paul R. de la Houssaye, Graham A. Garcia, Stephen D. Russell, Stanley R. Clayton, Andrew T. Barfknecht
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Patent number: 5587597Abstract: A process for developing conductive interconnect regions between integrated circuit semiconductor devices formed on an insulating substrate utilizes the semiconductor material itself for formation of device interconnect regions.A patterned layer of semiconductor material is formed directly on the surface of an insulating substrate. The patterned layer includes regions where semiconductor devices are to be formed and regions which are to be used to interconnect terminals of predetermined ones of the semiconductor devices. After forming the semiconductor devices in selected regions of the semiconductor material, the regions of the semiconductor material patterned for becoming interconnects are converted to a metallic compound of the semiconductor material.Type: GrantFiled: July 11, 1991Date of Patent: December 24, 1996Assignee: The United States of America as represented by the Secretary of the NavyInventors: Ronald E. Reedy, Graham A. Garcia, Isaac Lagnado
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Patent number: 5521412Abstract: A method for forming a semiconductor structure having a layer of low minority carrier lifetime and a layer of high minority carrier lifetime comprises the steps of forming a silicon dioxide layer on a layer of low minority carrier lifetime silicon of a silicon-on-sapphire handle wafer and another layer of silicon dioxide on a layer of high minority carrier lifetime silicon of a bulk silicon device wafer. The silicon dioxide layers are placed in contact and annealed to form a bonded structure having an annealed layer of silicon dioxide. The layer of bulk silicon is then thinned. The thinned layer of bulk silicon and the annealed silicon dioxide layer are patterned by photolithography to form mesas of high minority carrier lifetime silicon and to expose regions of low minority carrier lifetime silicon on the bonded structure.Type: GrantFiled: June 26, 1995Date of Patent: May 28, 1996Assignee: The United States of America as represented by the Secretary of the NavyInventors: Howard W. Walker, Graham A. Garcia
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Method for forming low and high minority carrier lifetime layers in a single semiconductor structure
Patent number: 5468674Abstract: A method for forming a semiconductor structure having a layer of low minority carrier lifetime and a layer of high minority carrier lifetime comprises the steps of forming a silicon dioxide layer on a layer of low minority carrier lifetime silicon of a silicon-on-sapphire handle wafer and another layer of silicon dioxide on a layer of high minority carrier lifetime silicon of a bulk silicon device wafer. The silicon dioxide layers are placed in contact and annealed to form a bonded structure having an annealed layer of silicon dioxide. The layer of bulk silicon is then thinned. The thinned layer of bulk silicon and the annealed silicon dioxide layer are patterned by photolithography to form mesas of high minority carrier lifetime silicon and to expose regions of low minority carrier lifetime silicon on the bonded structure.Type: GrantFiled: June 8, 1994Date of Patent: November 21, 1995Assignee: The United States of America as represented by the Secretary of the NavyInventors: Howard W. Walker, Graham A. Garcia -
Patent number: 5253196Abstract: An integrated circuit memory element is capable of storing analog information. The memory value can be increased and decreased incrementally with no knowledge of the current state and may be stored for a long period of time. Analog memory information is stored as an electrical charge on a floating gate structure and modification of this information is accomplished by the use of hot-carrier injection to transport electrons off of as well as onto the floating gate (to erase as well as to program electrically).Type: GrantFiled: January 9, 1991Date of Patent: October 12, 1993Assignee: The United States of America as represented by the Secretary of the NavyInventors: Randy L. Shimabukuro, Michael E. Stewart, Patrick A. Shoemaker, Graham A. Garcia
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Patent number: 5196802Abstract: A method and apparatus for characterizing the quality of an electrically thin semiconductor film and its interfaces with adjacent materials by employing a capacitor and a topside electrical contact on the same side of the electrically thin semiconductor film to thereby permit the taking of capacitance-voltage (C-V) measurements. A computer controlled C-V measuring system is operatively coupled to the contact and capacitor to modulate the potential on the capacitor. Variation of the voltage applied to the capacitor enables modulation of the potential applied to the film to thereby vary the conductivity of the film between the capacitor gate node and the topside contact.Type: GrantFiled: April 23, 1990Date of Patent: March 23, 1993Assignee: The United States of America as represented by the Secretary of the NavyInventors: Mark L. Burgener, Graham A. Garcia, Ronald E. Reedy
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Patent number: 5066613Abstract: A process for developing conductive interconnect regions between integrated circuit semiconductor devices formed on an insulating substrate utilizes the semiconductor material itself for formation of device interconnect regions.A patterned layer of semiconductor material is formed directly on the surface of an insulating substrate. The patterned layer includes regions where semiconductor devices are to be formed and regions which are to be used to interconnect terminals of predetermined ones of the semiconductor devices. After forming the semiconductor devices in selected regions of the semiconductor material, the regions of the semiconductor material patterned for becoming interconnects are converted to a metallic compound of the semiconductor material.Type: GrantFiled: July 13, 1989Date of Patent: November 19, 1991Assignee: The United States of America as represented by the Secretary of the NavyInventors: Ronald E. Reedy, Graham A. Garcia, Isaac Lagnado
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Patent number: 5027171Abstract: A dual-polarity nonvolatile MOS analog memory cell is disclosed that comprises two pairs of complementary metal oxide field effect transistors. Each pair includes a p-channel and an n-channel transistor. The gates of each transistor are all operably coupled in common to form a common floating gate. The sources of the transistors of the first transistor pair are operably coupled to a common ground. The sources of the second pair of transistors are operably coupled together to form an output junction. Positive voltage applied to the drain of the n-channel transistor of the first transistor pair causes a positive analog value to be stored in memory when there previously was no value stored in memory, or increases a value previously stored in memory. Negative voltage applied to the drain of the p-channel transistor of the first transistor pair causes a negative analog value to be stored in memory when there previously was no value stored in memory, or decreases a value previously stored in memory.Type: GrantFiled: August 28, 1989Date of Patent: June 25, 1991Assignee: The United States of America as represented by the Secretary of the NavyInventors: Ronald E. Reedy, Randy L. Shimabukuro, Graham A. Garcia
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Patent number: 4843448Abstract: An integrated injection logic device formed on an insulating substrate. A lateral, load transistor and an adjacent, vertical switching transistor are formed in the semiconductor layer such that the collector region of the lateral transistor coincides with the base region of the switching transistor. The emitter of the switching transistor is located at the surface of the semiconductor injecting carriers downward into the collector. Isolated multiple collector contacts required for wired-AND logic are obtained by using separate Schottky-barrier contacts for each collector output.Type: GrantFiled: April 18, 1988Date of Patent: June 27, 1989Assignee: The United States of America as represented by the Secretary of the NavyInventors: Graham A. Garcia, Ronald E. Reedy
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Patent number: 4725728Abstract: Longitudinal tensile and/or compressive strain in optical fibers is detered by an entirely optical technique. A test optical fiber optically coupled to optical injection and extraction couplers form an optically recirculating loop. A semiconductor laser diode feeds a series of narrow light pulses into the loop via the injection coupler and an oscilloscope or signal peak detector give visual indications of optical correlation when an avalanche photodiode provides responsive signals coming from the extraction coupler. Straining the optical test fiber will change the loop's length and, hence, the time delay between reoccurring pulses so that the loop frequency of the narrow optical pulses must be correspondingly changed to provide maximum signal correlation. Changing the pulse repetition rate of the laser diode until a maximum correlated signal is observed at the scope or detector provides a new resonant loop frequency that is proportional to strain.Type: GrantFiled: August 13, 1986Date of Patent: February 16, 1988Assignee: The United States of America as represented by the Secretary of the NavyInventors: Michael R. Brininstool, Graham A. Garcia
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Patent number: 4510607Abstract: An improvement for a semiconductor laser allows the facet reflectivity to be modified to compensate for the presence of a liquid or transparent solid medium having an index of refraction n.sub.m. A first dielectric coating is disposed on an end-facet of the semiconductor laser and has an index of refraction n.sub.1. A second dielectric coating is disposed on the first dielectric coating and has an index of refraction n.sub.2. The materials of the dielectric coatings are selected such that the fraction n.sub.1 /n.sub.2 =.sqroot.n.sub.m. Thus the problems associated with reductions of laser facet reflectivity due to being in contact with a surrounding medium which optically is very different from air is overcome.Type: GrantFiled: January 3, 1984Date of Patent: April 9, 1985Assignee: The United States of America as represented by the Secretary of the NavyInventors: Graham A. Garcia, Steven J. Cowen
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Patent number: H1423Abstract: The present invention provides a method for fabricating a silicon-on-insulator voltage multiplier.Type: GrantFiled: December 10, 1992Date of Patent: April 4, 1995Assignee: The United States of America as represented by the Secretary of the NavyInventors: Larry D. Flesner, Graham A. Garcia, George P. Imthurn