Abstract: Improved methods for performing atomic layer deposition (ALD) are described. These improved methods provide more complete saturation of the surface reactive sites and provides more complete monolayer surface coverage at each half-cycle of the ALD process. In one embodiment, operating parameters are fixed for a given solvent based precursor. In another embodiment, one operating parameter, e.g. chamber pressure is altered during the precursor deposition to assure full surface saturation.

Abstract: Methods and apparatus for cleaning a process chamber using a fluorine gas, wherein the fluorine gas is at least partially recycled for further use in the cleaning cycle. The method includes generation of the fluorine, separation of fluorine from the waste gas of the process chamber and abatement of the waste. The apparatus includes a vacuum pump for moving the waste gas and fluorine gas to and from the process chamber and can further include a sensing unit to determine the cleaning cycle endpoint.

Abstract: The present invention relates to methods and apparatus used in the cleaning of chambers, such as semiconductor processing chambers. In particular, fluorine from a fluorine generator is used in the cleaning cycle and by-product hydrogen from the fluorine generation is used to condition the chamber and remove residual fluorine following the cleaning cycle.

Abstract: Dielectric layers having a low dielectric constant are fabricated by using an asymmetric organocyclosiloxane as a precursor gas. The carbon content of the deposited layer is reduced to less than about 50 percent by use an oxidizing agent, a silicon containing compound, or a combination thereof.

Abstract: A method and apparatus is disclosed for producing fluorine by providing a contained fluorine precursor source located proximate to or remotely from an adsorbent bed, optionally in a replaceable unit that may be a replaceable module comprising both the fluorine source and the adsorbent bed. Fluorine derived preferably from a nitrogen trifluoride source and used to remove deposited silicon-containing impurities in reaction chambers is reclaimed from an adsorbent bed, and made available to the reaction chamber as a supplemental fluorine source to reduce the total required amount of nitrogen trifluoride source gas. The separation column adsorbent is regenerated in cyclical intervals using a reverse flow of inert gas.

Abstract: The present invention provides for the use of F2 in the process of deposition chamber cleaning which is especially effective if operated under high pressure conditions. In addition, the present invention provides for the use of F2 under high pressure to perform substrate etching or wafer thinning procedures at a high etch rate.

Abstract: A method and apparatus is disclosed for producing fluorine by providing a contained fluorine precursor source located proximate to or remotely from an adsorbent bed, optionally in a replaceable unit that may be a replaceable module comprising both the fluorine source and the adsorbent bed. Fluorine derived preferably from a nitrogen trifluoride source and used to remove deposited silicon-containing impurities in reaction chambers is reclaimed from an adsorbent bed, and made available to the reaction chamber as a supplemental fluorine source to reduce the total required amount of nitrogen trifluoride source gas. The separation column adsorbent is regenerated in cyclical intervals using a reverse flow of inert gas.

Abstract: The present invention is directed to a process and system for the versatile operation of process equipment, and especially semiconductor process chamber clean equipment, from any pressure level ranging from a vacuum to just less than one atmosphere absolute. The system of the present invention provides a storage vessel capable of storing gas at sub-atmospheric pressure and a vacuum pump. By using a vacuum pump, the vessel stores a reasonable quantity of gas without being pressurized above atmospheric pressure. Therefore, the entire capacity of the vessel can be supplied to the process because the vacuum pump pulls the contents from the vessel down to about 1 torr. In addition, the gas can be provided at a constant supply pressure, while providing a safe gas storage vessel, since the supply gas is never stored at a pressure above one atmosphere absolute.

Abstract: A method and apparatus is disclosed for producing fluorine by providing a contained fluorine precursor source located proximate to or remotely from an adsorbent bed, optionally in a replaceable unit that may be a replaceable module comprising both the fluorine source and the adsorbent bed. Fluorine derived preferably from a nitrogen trifluoride source and used to remove deposited silicon-containing impurities in reaction chambers is reclaimed from an adsorbent bed, and made available to the reaction chamber as a supplemental fluorine source to reduce the total required amount of nitrogen trifluoride source gas. The separation column adsorbent is regenerated in cyclical intervals using a reverse flow of inert gas.

Abstract: An electrical connector (20) includes an elongated dielectric housing (22) having a longitudinal cavity (28) for receiving a terminal module (26). The module includes a dielectric insert (30) received in the cavity and mounting a plurality of terminals (32) having tail portions (42) projecting from the housing. An elongated tail aligning device (24) is mountable on the housing and has a plurality of apertures (68) through which the tail portions (42) of the terminals (32) project. The tail aligning device (24) includes flanges or guide rails (72) which, after full assembly, serve to hold the modules (26) in the housing cavity (28). The guide rails fit into guide channels (60) on the housing and the aligning device is held to the housing by snap-latches (62,76).

Abstract: A system is disclosed for terminating the shield a high speed cable having an outer jacket, an inner metallic shield with a portion of the outer jacket removed to expose a portion of the metallic shield, and an inner dielectric inside the metallic shield. The system includes a conductive two-part terminating member having a shield management part and a shield terminating part. The shield management part is adapted for allowing separation of the metallic shield from the inner dielectric and soldering of the shield to the shield management part, while protecting the inner dielectric from the heat of soldering. The shield terminating part is adapted for grounding the metallic shield and includes a receptacle for receiving the shield management part in conductive engagement therewith.

Abstract: An electrical connector includes a dielectric housing having a plurality of terminals therein. Each terminal has a tail portion projecting from the housing. A tail aligning device is secured to the housing and an intersection between the housing and the tail aligning device captures some of said tail portions of the terminals.