Patents by Inventor Graham Anthony McFarlane

Graham Anthony McFarlane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solution based precursors
    Patent number: 8710253
    Abstract: Solution-based precursors for use as starting materials in film deposition processes, such as atomic layer deposition, chemical vapor deposition and metalorganic chemical vapor deposition. The solution-based precursors allow for the use of otherwise solid precursors that would be unsuitable for vapor phase deposition processes because of their tendency to decompose and solidify during vaporization.
    Type: Grant
    Filed: July 1, 2010
    Date of Patent: April 29, 2014
    Assignee: Linde Aktiengesellschaft
    Inventors: Ce Ma, Kee-Chan Kim, Graham Anthony McFarlane
  • SOLUTION BASED PRECURSORS
    Publication number: 20120178953
    Abstract: Solution-based precursors for use as starting materials in film deposition processes, such as atomic layer deposition, chemical vapor deposition and metalorganic chemical vapor deposition. The solution-based precursors allow for the use of otherwise solid precursors that would be unsuitable for vapor phase deposition processes because of their tendency to decompose and solidify during vaporization.
    Type: Application
    Filed: July 1, 2010
    Publication date: July 12, 2012
    Inventors: Ce Ma, Kee-Chan Kim, Graham Anthony McFarlane
  • SOLUTION BASED LANTHANIDE AND GROUP III PRECURSORS FOR ATOMIC LAYER DEPOSITION
    Publication number: 20100290968
    Abstract: Oxygen free cyclopentadienyl solvent based precursor formulations having the general formula: (R1R2R3R4R5Cp)3*M wherein R1, R2, R3, R4, and R5 are H or hydrocarbon CnHm (n=1 to 10, m=1 to 2n+1), Cp is cyclopentadienyl and M is an element from the lanthanide series or Group III materials.
    Type: Application
    Filed: May 13, 2009
    Publication date: November 18, 2010
    Inventors: Ce MA, Kee-Chan Kim, Graham Anthony McFarlane
  • SOLUTION BASED ZIRCONIUM PRECURSORS FOR ATOMIC LAYER DEPOSITION
    Publication number: 20100290945
    Abstract: Oxygen free, solution based zirconium precursors for use in ALD processes are disclosed for growing ZrO2 or other Zr compound films in a self-limiting and conformal manner. An oxygen free, solution based ALD precursor of (t-BuCp)2ZrMC2 is particular useful for depositing ZrO2 or other Zr compound films.
    Type: Application
    Filed: May 13, 2009
    Publication date: November 18, 2010
    Inventors: Ce MA, Kee-Chan Kim, Graham Anthony McFarlane
  • SOLUTION BASED LANTHANUM PRECURSORS FOR ATOMIC LAYER DEPOSITION
    Publication number: 20090117274
    Abstract: Alkyl cyclopentadienyl precursors for use in ALD processes are disclosed. The present invention particularly relates to La alkyl cyclopentadienyl precursors, such as tris(isopropyl-cyclopentadienyl) Lanthanum.
    Type: Application
    Filed: October 30, 2008
    Publication date: May 7, 2009
    Inventors: Ce Ma, Kee-Chan Kim, Graham Anthony McFarlane