Patents by Inventor Graham E. Rowlands

Graham E. Rowlands has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • QUANTUM AND MAGNONIC-BASED MAGNETOMETER DRIVEN WITH AN ULTRALOW PHASE AND AMPLITUDE NOISE OSCILLATOR
    Publication number: 20260243854
    Abstract: A magnetometer may include an oscillator to generate a carrier signal, one or more sensor heads, each including a pair of ferrimagnetic resonators with resonant frequencies matched to the carrier signal, one or more magnets configured to bias the pair of ferrimagnetic resonators with opposing magnetic bias fields, where an external magnetic field in a measurement direction aligned with the opposing magnetic bias fields modifies the resonant frequencies of the pair of ferrimagnetic resonators in opposite directions, and a pair of phase detectors configured to measure phase shifts of the carrier signal by the pair of ferrimagnetic resonators. The magnetometer may also include differential detection circuitry to generate a detection signal indicative of a strength of the external magnetic field along the measurement direction associated with each of the one or more sensor heads based on a differential measurement of the phase shifts.
    Type: Application
    Filed: February 20, 2026
    Publication date: August 20, 2026
    Inventors: James Andrew Dervay, Erik Eisenach, Jason D. Adams, Matthew A. Morton, Graham E. Rowlands, Moe D. Soltani
  • Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect
    Patent number: 10333058
    Abstract: The disclosed technology provides various implementations of a device based on a spin Hall effect (SHE) and spin transfer torque (STT) effect.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: June 25, 2019
    Assignee: Cornell University
    Inventors: Sriharsha V. Aradhya, Robert A. Buhrman, Daniel C. Ralph, Graham E. Rowlands
  • NANOSECOND-TIMESCALE LOW-ERROR SWITCHING OF 3-TERMINAL MAGNETIC TUNNEL JUNCTION CIRCUITS THROUGH DYNAMIC IN-PLANE-FIELD ASSISTED SPIN-HALL EFFECT
    Publication number: 20180033954
    Abstract: The disclosed technology provides various implementations of a device based on a spin Hall effect (SHE) and spin transfer torque (STT) effect.
    Type: Application
    Filed: March 17, 2017
    Publication date: February 1, 2018
    Inventors: Sriharsha V. Aradhya, Robert A. Buhrman, Daniel C. Ralph, Graham E. Rowlands