Patents by Inventor Graham J. Davies

Graham J. Davies has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Compositions having non-linear optical properties
    Patent number: 4748074
    Abstract: Non linear optical compositions contain a vinylidene fluoride copolymer and an additive having molecular optoelelectronic activity, e.g. methyl-N-(2,4-dinitrophenyl)-alaninate. Poled films derived from the composite display optoelectronic activity. There is a marked contrast with known techniques in which single crystals are utilized. The compositions are used to make laminates which display good waveguide properties.
    Type: Grant
    Filed: December 16, 1985
    Date of Patent: May 31, 1988
    Assignee: British Telecommunications Public Limited Company
    Inventors: Philippos Pantelis, Graham J. Davies
  • Optical waveguides containing compositions having non-linear optical properties
    Patent number: 4746577
    Abstract: Non linear optical compositions contain a vinylidene fluoride copolymer and an additive having molecular optoelectronic activity, e.g. methyl-N-(2,4-dinitrophenyl)-alaninate. Poled films derived from the composite display optoelectronic activity. There is a marked contrast with known techniques in which single crystals are utilized. The compositions are used to make laminates which display good waveguide properties.
    Type: Grant
    Filed: February 24, 1987
    Date of Patent: May 24, 1988
    Assignee: British Telecommunications Public Limited Company
    Inventors: Philippos Pantelis, Graham J. Davies
  • Method and apparatus for etching integrated optoelectronic devices
    Patent number: 4675086
    Abstract: Optoelectronic devices are produced as integrated chips which include elements to control optical signals and electronic elements to control the optical elements. An integrated chip includes optical wave guides with tapered ends to facilitate exit and entry of optical signals. The tapered ends are produced by photo-electrolytic etch using illumination of graded intensity, e.g. the penumbra of a shadow.
    Type: Grant
    Filed: November 18, 1985
    Date of Patent: June 23, 1987
    Assignee: British Telecommunications public limited company
    Inventors: Graham J. Davies, Charles R. Elliott
  • Molecular beam epitaxy electrolytic dopant source
    Patent number: 4447276
    Abstract: A method of growing crystalline semiconductors such as GaAs is disclosed. The method involves epitaxial deposition from the vapor phase and provides dopant material such as sulphur in the form of a molecular beam. The molecular beam is developed by effusion from a knudsen cell. The difficulties previously encountered using sulphur as such a cell are counteracted by use of an electrochemical cell as the sulphur source. The technique allows complicated doping profiles to be produced.
    Type: Grant
    Filed: June 15, 1981
    Date of Patent: May 8, 1984
    Assignee: The Post Office
    Inventors: Graham J. Davies, Roger Heckingbottom, David A. Andrews