Patents by Inventor Graham Leitch Clark

Graham Leitch Clark has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor memory cell with leakage current compensation using a tunnel diode
    Publication number: 20030048655
    Abstract: A memory cell (10) includes a transistor (12), a storage capacitor (14) and a tunnel diode (16). The transistor (12), storage capacitor (14) and tunnel diode (16) couple together at a cell state node (28). When the transistor (12) in the off state, leakage current from cell state node (28) is compensated by current supplied by the tunnel diode (16). The tunnel diode (16) is formed on a node (26) of the transistor (12) so that it consumes no additional semiconductor area beyond that used by the transistor (12) and storage capacitor (14).
    Type: Application
    Filed: September 10, 2001
    Publication date: March 13, 2003
    Inventors: El-Badawy Amien El-Sharawy, Graham Leitch Clark