Abstract: A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Abstract: A calibration gauge, an apparatus and a method for calibrating sensors that detect wafer protrusion from a wafer cassette using the calibration gauge. The calibration gauge includes a disk having a first region which is a circular sector of central angle A1 having a constant radius R1 about a center and an integral second region of increasing radius about the center, the increasing radius increasing from R1 to R2 through a central angle A2, wherein R2 is greater than R1 and A1+A2 equals 360°.

Abstract: A calibration gauge, an apparatus and a method for calibrating sensors that detect wafer protrusion from a wafer cassette using the calibration gauge. The calibration gauge includes a disk having a first region which is a circular sector of central angle A1 having a constant radius R1 about a center and an integral second region of increasing radius about the center, the increasing radius increasing from R1 to R2 through a central angle A2, wherein R2 is greater than R1 and A1+A2 equals 360°.

Abstract: A method and apparatus for removing a pad adhesively secured to a platen. The apparatus includes a barrel assembly having a clamp assembly fixedly attached to a perimeter of the barrel assembly; a rotatable handle assembly nested within the barrel assembly; and a ratchet assembly nested between the handle assemble and the barrel assembly the ratchet assembly configured to engage the rotatable handle assembly.

Abstract: A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Abstract: A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Abstract: A method and apparatus for removing a pad adhesively secured to a platen. The apparatus includes a barrel assembly having a clamp assembly fixedly attached to a perimeter of the barrel assembly; a rotatable handle assembly nested within the barrel assembly; and a ratchet assembly nested between the handle assemble and the barrel assembly the ratchet assembly configured to engage the rotatable handle assembly.

Abstract: A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Abstract: A method and apparatus for removing a pad adhesively secured to a platen. The apparatus includes a barrel assembly having a clamp assembly fixedly attached to a perimeter of the barrel assembly; a rotatable handle assembly nested within the barrel assembly; and a ratchet assembly nested between the handle assemble and the barrel assembly the ratchet assembly configured to engage the rotatable handle assembly.

Abstract: A method of manufacturing a semiconductor structure includes varying local chemical mechanical polishing (CMP) abrading rates of an insulator film by selectively varying a carbon content of the insulator film.

Abstract: A method and apparatus for removing a pad adhesively secured to a platen. The apparatus includes a barrel assembly having a clamp assembly fixedly attached to a perimeter of the barrel assembly; a rotatable handle assembly nested within the barrel assembly; and a ratchet assembly nested between the handle assemble and the barrel assembly the ratchet assembly configured to engage the rotatable handle assembly.

Abstract: A method of manufacturing a semiconductor structure includes varying local chemical mechanical polishing (CMP) abrading rates of an insulator film by selectively varying a carbon content of the insulator film.

Abstract: A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Abstract: A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol and a diluent. The composition further includes abrasive particles and an oxidizer. The method includes providing the composition on a surface to be polished and polishing the surface by contacting the surface with a polishing pad.

Abstract: A patterned portion of a patterned semiconductor substrate is removed by abrasive mechanical planarization employing an abrasive pad but without employing any slurry. Preferably, water is supplied to enhance the removal rate during the mechanical planarization. The removal rate of material is substantially independent for common materials employed in back-end-of-line (BEOL) semiconductor materials, which enables non-selective removal of the material containing metallization structures. The removal rate of silicon is lower than the removal rate for the BEOL semiconductor materials, enabling a self-stopping planarization process.

Abstract: The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.

Abstract: The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an organic acid including polyacrylic acid or polymethacrylic acid, a corrosion inhibitor, and a liquid carrier. A portion of the copper in the metal layer is abraded to polish the substrate. A second CMP composition contacts the abraded substrate, the second acrylate free composition including an abrasive, a surfactant, an oxidizer, and a corrosion inhibitor, and a liquid carrier. Any dendrites that may have formed on the substrate are removed through abrasion.

Abstract: A patterned portion of a patterned semiconductor substrate is removed by abrasive mechanical planarization employing an abrasive pad but without employing any slurry. Preferably, water is supplied to enhance the removal rate during the mechanical planarization. The removal rate of material is substantially independent for common materials employed in back-end-of-line (BEOL) semiconductor materials, which enables non-selective removal of the material containing metallization structures. The removal rate of silicon is lower than the removal rate for the BEOL semiconductor materials, enabling a self-stopping planarization process.