Abstract: Improved methods for performing atomic layer deposition (ALD) are described. These improved methods provide more complete saturation of the surface reactive sites and provides more complete monolayer surface coverage at each half-cycle of the ALD process. In one embodiment, operating parameters are fixed for a given solvent based precursor. In another embodiment, one operating parameter, e.g. chamber pressure is altered during the precursor deposition to assure full surface saturation.

Abstract: Methods and apparatus for cleaning a process chamber using a fluorine gas, wherein the fluorine gas is at least partially recycled for further use in the cleaning cycle. The method includes generation of the fluorine, separation of fluorine from the waste gas of the process chamber and abatement of the waste. The apparatus includes a vacuum pump for moving the waste gas and fluorine gas to and from the process chamber and can further include a sensing unit to determine the cleaning cycle endpoint.

Abstract: Dielectric layers having a low dielectric constant are fabricated by using an asymmetric organocyclosiloxane as a precursor gas. The carbon content of the deposited layer is reduced to less than about 50 percent by use an oxidizing agent, a silicon containing compound, or a combination thereof.

Abstract: The present invention relates to methods and apparatus used in the cleaning of chambers, such as semiconductor processing chambers. In particular, fluorine from a fluorine generator is used in the cleaning cycle and by-product hydrogen from the fluorine generation is used to condition the chamber and remove residual fluorine following the cleaning cycle.

Abstract: A method and apparatus is disclosed for producing fluorine by providing a contained fluorine precursor source located proximate to or remotely from an adsorbent bed, optionally in a replaceable unit that may be a replaceable module comprising both the fluorine source and the adsorbent bed. Fluorine derived preferably from a nitrogen trifluoride source and used to remove deposited silicon-containing impurities in reaction chambers is reclaimed from an adsorbent bed, and made available to the reaction chamber as a supplemental fluorine source to reduce the total required amount of nitrogen trifluoride source gas. The separation column adsorbent is regenerated in cyclical intervals using a reverse flow of inert gas.

Abstract: The present invention provides for the use of F2 in the process of deposition chamber cleaning which is especially effective if operated under high pressure conditions. In addition, the present invention provides for the use of F2 under high pressure to perform substrate etching or wafer thinning procedures at a high etch rate.