Abstract: A method for fabricating a thermally isolated microelectromechanical system (MEMS) structure is provided. The method includes processing a first wafer of a first material with a glass wafer to form a composite substrate including at least one sacrificial structure of the first material and glass; forming a MEMS device in a second material; forming at least one temperature sensing element on at least one of: the composite substrate; and the MEMS device; and etching away the at least one sacrificial structure of the first material in the composite substrate to form at least one thermally isolating glass flexure. The MEMS device is thermally isolated on a thermal isolation stage by the at least one thermally isolating glass flexure. The at least one temperature sensing element in on a respective at least one of: the thermal isolation stage; and the MEMS device.

Abstract: A temperature stabilized device and method for temperature stabilization are provided. The temperature stabilized device comprises a substrate having a first surface, at least one component mounted on the first surface of the substrate, and a first conformal layer comprising a thermoelectric material, with the first conformal layer over the at least one component. A first temperature control circuit is electrically coupled to the first conformal layer. The first temperature control circuit is configured to control a current through the first conformal layer. The current through the first conformal layer is controlled to maintain the at least one component at a target operating temperature.

Abstract: System and methods for highly integrated optical readout MEMS sensors are provided. In one embodiment, a method for an integrated waveguide optical-pickoff sensor comprises: launching a laser beam generated by a laser light source into an integrated waveguide optical-pickoff monolithically fabricated within a first substrate, the integrated waveguide optical-pickoff including an optical input port, a coupling port, and an optical output port; and detecting an amount of coupling of the laser beam from the coupling port to a sensor component separated from the coupling port by a gap by measuring an attenuation of the laser beam at the optical output port.

Abstract: A method for fabricating a thermally isolated microelectromechanical system (MEMS) structure is provided. The method includes processing a first wafer of a first material with a glass wafer to form a composite substrate including at least one sacrificial structure of the first material and glass; forming a MEMS device in a second material; forming at least one temperature sensing element on at least one of: the composite substrate; and the MEMS device; and etching away the at least one sacrificial structure of the first material in the composite substrate to form at least one thermally isolating glass flexure. The MEMS device is thermally isolated on a thermal isolation stage by the at least one thermally isolating glass flexure. The at least one temperature sensing element in on a respective at least one of: the thermal isolation stage; and the MEMS device.

Abstract: System and methods for highly integrated optical readout MEMS sensors are provided. In one embodiment, a method for an integrated waveguide optical-pickoff sensor comprises: launching a laser beam generated by a laser light source into an integrated waveguide optical-pickoff monolithically fabricated within a first substrate, the integrated waveguide optical-pickoff including an optical input port, a coupling port, and an optical output port; and detecting an amount of coupling of the laser beam from the coupling port to a sensor component separated from the coupling port by a gap by measuring an attenuation of the laser beam at the optical output port.

Abstract: A temperature stabilized device and method for temperature stabilization are provided. The temperature stabilized device comprises a substrate having a first surface, at least one component mounted on the first surface of the substrate, and a first conformal layer comprising a thermoelectric material, with the first conformal layer over the at least one component. A first temperature control circuit is electrically coupled to the first conformal layer. The first temperature control circuit is configured to control a current through the first conformal layer. The current through the first conformal layer is controlled to maintain the at least one component at a target operating temperature.

Abstract: A microelectromechanical (MEMS) structure is provided. In one embodiment, the MEMS structure includes a glass substrate layer containing at least one embedded stress isolation feature. The glass substrate also includes at least one bump bond site configured for coupling the MEMS structure to a package. The MEMS structure also includes a semiconductor device layer, formed on the glass substrate layer, that includes a MEMS sensor.

Abstract: In an embodiment a method of fabricating a MEMS structure is provided. The method includes fabricating a working structure in a doped layer proximate a first surface of a silicon substrate. The first surface of the silicon substrate is bonded to a first planar glass structure having a first one or more sacrificial features embedded therein. The method also includes etching to remove a bulk of the silicon substrate, wherein the bulk is reverse of the first surface on the silicon substrate, wherein etching removes the bulk and leaves the working structure bonded to the first planar glass structure. The method also includes etching to remove the first one or more sacrificial features from the first planar glass structure.

Abstract: In an embodiment a method of fabricating a MEMS structure is provided. The method includes fabricating a working structure in a doped layer proximate a first surface of a silicon substrate. The first surface of the silicon substrate is bonded to a first planar glass structure having a first one or more sacrificial features embedded therein. The method also includes etching to remove a bulk of the silicon substrate, wherein the bulk is reverse of the first surface on the silicon substrate, wherein etching removes the bulk and leaves the working structure bonded to the first planar glass structure. The method also includes etching to remove the first one or more sacrificial features from the first planar glass structure.