Abstract: A support structure is applied directly to the first side of a semiconductor work piece or wafer by a stereolithographic process layer by layer completely about and extending inwardly of the periphery of the wafer, but external to the selected area within which a desired circuitry pattern is placed, the support structure being of a desired height and of a material resistive to an acid etch process effective to seal the circuitry pattern in the selected area from acid when the work piece is subjected to an acid etch on the opposing second side and about the periphery. The support structure further strengthens the work piece against flexural failure.