Patents by Inventor Gray Lin

Gray Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Edge emitting laser with circular beam
    Patent number: 7031361
    Abstract: An edge emitting laser with circular beam using a low-carrier-mobility diluted nitride semiconductor material for an epitaxy light-emitting layer is disclosed. The low-carrier-mobility material can greatly suppress surface recombination of carriers. The epitaxy structure established on the substrate surface includes, from bottom to top, a bottom cladding layer, a bottom waveguide layer, a light-emitting layer, an upper waveguide layer, an upper cladding layer, and an electrode contact layer. The light-emitting layer is formed from a diluted nitride material. Etching is performed from the epitaxy structure through the light-emitting layer, forming a ridge waveguide that has a large reflective index difference between the light-emitting layer and the dielectric passivation layer.
    Type: Grant
    Filed: December 23, 2003
    Date of Patent: April 18, 2006
    Assignee: Industrial Technology Research Institute
    Inventors: Jyh-Shyang Wang, Gray Lin, Alexey R Kovsh, Daniil Alexandrovich Livshits
  • Edge emitting laser with circular beam
    Publication number: 20050089072
    Abstract: An edge emitting laser with circular beam using a low-carrier-mobility diluted nitride semiconductor material for an epitaxy light-emitting layer is disclosed. The low-carrier-mobility material can greatly suppress surface recombination of carriers. The epitaxy structure established on the substrate surface includes, from bottom to top, a bottom cladding layer, a bottom waveguide layer, a light-emitting layer, an upper waveguide layer, an upper cladding layer, and an electrode contact layer. The light-emitting layer is formed from a diluted nitride material. Etching is performed from the epitaxy structure through the light-emitting layer, forming a ridge waveguide that has a large reflective index difference between the light-emitting layer and the dielectric passivation layer.
    Type: Application
    Filed: December 23, 2003
    Publication date: April 28, 2005
    Inventors: Jyh-Shyang Wang, Gray Lin, Alexey Kovsh, D. Livshits