Abstract: Electrical energy is transcutaneously transmitted from an external charger to an implanted medical device. The external charger includes a charging head comprising a plurality of pivotable hinged sections for selectively shaping the charging head to conform to a surface of a patient. The external charger further includes an alternating current (AC) charging coil housed in the charging head for transcutaneously transmitting electrical energy to the implanted medical device. The charging head may also include one or more sensors for determining the shape of a charging coil in the charging head, which cause the charge of the coil to be adjusted based on the coil shape.

Abstract: Electrical energy is transcutaneously transmitted from an external charger to an implanted medical device. The external charger includes a charging head that is selectively shaped to conform to the surface of a patient to enhance charge efficiency and patient comfort. The charging head has a plurality of malleable support members extending through the charging head for affixing the flexible charging head in the selected shape, while the flexible charging head conforms to the surface of the patient. The charging head may also include one or more sensors for determining the shape of a charging coil in the charging head, which cause the charge of the coil to be adjusted based on the coil shape.

Abstract: Electrical energy is transcutaneously transmitted from an external charger to an implanted medical device. The external charger includes a charging head comprising a flexible material that is selectively shaped to conform to the surface of a patient to enhance charge efficiency and patient comfort. The flexible material is curable to become inflexible and embody a fixed shape and may comprise, for example, a thermoplastic for being re-shaped and re-cured multiple times, or a thermoset plastic that maintains a permanent shape and cannot be re-cured to form another shape. The charging head may also include one or more sensors for determining the shape of a charging coil in the charging head, which cause the charge of the coil to be adjusted based on the coil shape.

Abstract: Electrical energy is transcutaneously transmitted from an external charger to an implanted medical device. The external charger includes a charging head that is selectively shapeable to conform to the surface of a patient to enhance charge efficiency and patient comfort. An alternating current charging coil is housed in the charging head and configured for transcutaneously transmitting electrical energy to the implanted medical device. The shape of the coil is changeable as the charging head is shaped, and at least one sensor determines changes in the shape of the charging coil and causes the charge of the coil to be adjusted based on the coil shape.

Abstract: An example of the present application is directed to an integrated circuit having a first plurality of transistors and a second plurality of transistors. Each of the first plurality of transistors comprises a first gate structure oriented in a first direction and each of the second plurality of transistors comprises a second gate structure oriented in a second direction. Each of the first plurality of transistors are formed with at least one more pocket region than each of the second plurality of transistors. Methods for forming the integrated circuit devices of the present application are also disclosed.

Abstract: Methods for treating seizures caused by brain stimulation include providing a stimulator, programming the stimulator with one or more stimulation parameters configured to treat a medical condition, applying at least one stimulus with the stimulator to a stimulation site within the brain of a patient in accordance with the one or more stimulation parameters, and monitoring the patient for a seizure caused by the at least one stimulus.

Abstract: Methods and systems of treating a patient with pancreatitis pain include providing a stimulator, configuring one or more stimulation parameters to control sphincter of Oddi function, programming the stimulator with the one or more stimulation parameters, generating a stimulus configured to control sphincter of Oddi function with the stimulator in accordance with the one or more stimulation parameters, and applying the stimulus with the stimulator to one or more stimulation sites in accordance with the one or more stimulation parameters.

Abstract: Methods and systems of treating a patient with pancreatitis pain include providing a stimulator, configuring one or more stimulation parameters to treat pancreatitis pain, programming the stimulator with the one or more stimulation parameters, generating a stimulus configured to treat pancreatitis pain with the stimulator in accordance with the one or more stimulation parameters, and applying the stimulus with the stimulator to one or more stimulation sites in accordance with the one or more stimulation parameters.

Abstract: A paddle lead includes a paddle body with a plurality of electrodes disposed on the paddle body. The plurality of electrodes includes a first electrode and a second electrode. The first electrode and the second electrode are disposed laterally around the circumference of the paddle body. At least one connecting wire is disposed on, or within, the paddle body to electrically couple the first electrode and the second electrode.

Abstract: Exemplary systems include a stimulator configured to be implanted within a patient, the stimulator having a body defined by at least one side surface disposed in between distal and proximal end surfaces, and a connector assembly configured to be coupled to the stimulator and extend parallel to the at least one side surface of the stimulator. The connector assembly is further configured to facilitate removable coupling of a lead having one or more electrodes disposed thereon to the stimulator.

Abstract: An example of the present application is directed to an integrated circuit having a first plurality of transistors and a second plurality of transistors. Each of the first plurality of transistors comprises a first gate structure oriented in a first direction and each of the second plurality of transistors comprises a second gate structure oriented in a second direction. Each of the first plurality of transistors are formed with at least one more pocket region than each of the second plurality of transistors. Methods for forming the integrated circuit devices of the present application are also disclosed.

Abstract: A method for manufacturing a semiconductor wafer 10 that includes implanting source/drain regions 75 within a top surface of the semiconductor substrate 20, forming a dielectric capping layer 170 over the semiconductor wafer 20, and annealing the semiconductor wafer 10 to activate sources/drains 70. The method further includes forming a layer of photoresist 180 and then patterning the layer of photoresist 180 to protect a middle portion of the polysilicon layer 100 of the non-silicided poly resistor stacks 30, etching the exposed portions of the dielectric capping layer 170, and removing the patterned photoresist 180. A layer of silicidation metal 190 is formed over the semiconductor wafer 10, and a silicide anneal is performed to create a silicide 160 within a top surface of said sources/drains 70 and also within unprotected top portions of the polysilicon layer 100 of the non-silicided poly resistors 30. Then the remaining portions of the dielectric capping layer 170 are etched.

Abstract: The present invention provides a system for limiting degradation of a first semiconductor structure (304) caused by an electric field (314), generated from within the semiconductor substrate (302) by high voltage on a second semiconductor structure (310). A semiconductor device (300) is adapted to reduce the effective magnitude of the field—as realized at structure 304—to some fractional component (320), or to render the angle (322)—at which the field approaches the first structure through a first substrate region (306)—acute. Certain embodiments of the present invention provide for: lateral recession of the first semiconductor structure to abut an isolation structure (312), which is disposed between the second semiconductor structure and the first substrate region; lateral recession of the first semiconductor structure from the isolation structure, so as to form a moat therebetween; and a counter-doped region (316) within the first substrate region.

Abstract: The present invention provides a system for limiting degradation of a first semiconductor structure (304) caused by an electric field (314), generated from within the semiconductor substrate (302) by high voltage on a second semiconductor structure (310). A semiconductor device (300) is adapted to reduce the effective magnitude of the field—as realized at structure 304—to some fractional component (320), or to render the angle (322)—at which the field approaches the first structure through a first substrate region (306)—acute. Certain embodiments of the present invention provide for: lateral recession of the first semiconductor structure to abut an isolation structure (312), which is disposed between the second semiconductor structure and the first substrate region; lateral recession of the first semiconductor structure from the isolation structure, so as to form a moat therebetween; and a counter-doped region (316) within the first substrate region.