Abstract: Exemplary semiconductor processing chambers may include a showerhead. The chambers may also include a substrate support characterized by a first surface facing the showerhead. The first surface may be configured to support a semiconductor substrate. The substrate support may define a recessed pocket centrally located within the first surface. The recessed pocket may be defined by an outer radial wall characterized by a height from the first surface within the recessed pocket that is greater than or about 150% of a thickness of the semiconductor substrate.

Abstract: Implementations described herein generally relate to an apparatus for forming flowable films. In one implementation, the apparatus is a diffuser including a body having a first surface and a second surface opposing the first surface, a plurality of dome structures formed in the first surface, a central manifold formed in the second surface, and a plurality of tubular conduits coupled between the central manifold and a respective one of the plurality of dome structures, at least a portion of the plurality of tubular conduits being positioned diagonally relative to a plane of the first surface.

Abstract: Embodiments disclosed herein generally relate to a plasma processing system. The plasma processing system includes a processing chamber, a chamber seasoning system, and a remote plasma cleaning system. The processing chamber has a chamber body defining a processing region and a plasma field. The chamber seasoning system is coupled to the processing chamber. The chamber seasoning system is configured to season the processing region and the plasma field. The remote plasma cleaning system is in communication with the processing chamber. The remote plasma cleaning system is configured to clean the processing region and the plasma field.