Abstract: Various apparatus and methods for enhancing hot-electron luminescence in an integrated circuit are provided. In one aspect, an apparatus is provided that includes a first circuit device coupled to a first voltage source that is operable to bias the first circuit device to a first voltage, and a second circuit device that has a first input coupled to the first voltage source and a junction defining a first side and a second side. One of the first and second sides is coupled to a second voltage source that is independent of the first voltage source and capable of selectively biasing the one of the first and second sides at a second voltage higher than the first voltage. The second device is operable to emit a hot-electron induced photon upon entry into saturation.

Abstract: An integrated circuit die having silicon on insulator (SOI) structure is analyzed in a manner that improves the ability to obtain a signal from the SOI structure. According to one example embodiment, a stimulating device is adapted to stimulate an integrated circuit having SOI structure. An electro-optic probe arrangement is focused on a selected portion of the integrated circuit in a manner that makes possible the detection of a response to the stimulation from the SOI selected portion. In this manner electro-optic probing portions of an integrated circuit having SOI structure is enhanced.