Abstract: Disclosed are various embodiments of a differential logic to CMOS logic translator including a level-shifting and buffering stage configured to receive differential inputs and to provide resulting signals with lower common mode voltage. Further, a gain stage is included to receive the resulting signals and to provide increased swing signals. A CMOS buffer is also included and is configured to receive the increased swing signals and to provide a CMOS logic output. Also disclosed is a method of translating a differential logic signal to a CMOS logic signal including level-shifting and buffering differential input signals to provide resulting signals with lower common mode voltage. The method also includes using a gain stage to provide increased swing signals from the resulting lower common mode signals and using a CMOS buffer to provide a CMOS output from the increased swing signals.

Abstract: A memory device, current sense amplifier and method of operating the same are disclosed herein. In accordance with one embodiment, the current sense amplifier circuit may include a pair of cross-coupled transistors, a pair of output nodes and a first pair of load transistors. The pair of cross-coupled transistors may be coupled for receiving a pair of differential currents and for generating a pair of differential voltages, which may then be supplied to the pair of output nodes. The first pair of load transistors may have mutually-connected gate terminals, mutually-connected drain terminals, and a source terminal coupled to a different one of the output nodes. In a unique aspect of the invention, an equalization transistor may coupled between the pair of output nodes for equalizing the pair of differential voltages for a predetermined amount of time at the beginning of a sense cycle.

Abstract: Disclosed are various embodiments of a differential logic to CMOS logic translator including a level-shifting and buffering stage configured to receive differential inputs and to provide resulting signals with lower common mode voltage. Further, a gain stage is included to receive the resulting signals and to provide increased swing signals. A CMOS buffer is also included and is configured to receive the increased swing signals and to provide a CMOS logic output. Also disclosed is a method of translating a differential logic signal to a CMOS logic signal including level-shifting and buffering differential input signals to provide resulting signals with lower common mode voltage. The method also includes using a gain stage to provide increased swing signals from the resulting lower common mode signals and using a CMOS buffer to provide a CMOS output from the increased swing signals.

Abstract: Disclosed are various embodiments of a differential logic to CMOS logic translator including a level-shifting and buffering stage configured to receive differential inputs and to provide resulting signals with lower common mode voltage. Further, a gain stage is included to receive the resulting signals and to provide increased swing signals. A CMOS buffer is also included and is configured to receive the increased swing signals and to provide a CMOS logic output. Also disclosed is a method of translating a differential logic signal to a CMOS logic signal including level-shifting and buffering differential input signals to provide resulting signals with lower common mode voltage. The method also includes using a gain stage to provide increased swing signals from the resulting lower common mode signals and using a CMOS buffer to provide a CMOS output from the increased swing signals.

Abstract: Embodiments of a high-speed multiplexer latch are described. The multiplexer latch may include a multiplexer and a latch coupled to each other at a first node and a second node. The multiplexer latch may further include an inverter having an input and an output. The input of the inverter is also coupled to the latch at the second node and the output of the inverter is coupled to a data output terminal. The multiplexer latch may further include a bypass circuit coupled to the latch at the first node and the data output terminal.

Abstract: A method and an apparatus to generate static logic level outputs without a direct connection from a MOS transistor gate to either a power supply or ground supply are described. The apparatus may include a first circuit comprising a static logic level output. The apparatus may further include a second circuit coupled to the first circuit to drive the first circuit. The second circuit may comprise at least one of a latch and a feedback device.

Abstract: A method and system for efficiently testing circuitry. The method and system may be applied to testing embedded memory circuit blocks within a programmable logic device (PLD). Circuitry used in the testing process can be implemented from the programmable logic resources of the PLD, or alternatively, could be provided as specialized, dedicated test mode circuitry. The PLD may contain an arbitrary number, n, of memory blocks with each block having an arbitrary number, x, of output pins. An AND-tree circuit is implemented that receives each of the n*x output pins. If any pin is low, the output of the AND-tree is low, otherwise, the output is high. The output of the AND-tree is an input/output pin of the PLD. An OR-tree circuit is implemented that receives each of the n*x output pins. If any pin is high, the output of the OR-tree is high, otherwise, the output is low. The output of the OR-tree is another input/output pin of the PLD.

Abstract: According to one embodiment, a method for programming a programmable logic device (PLD) may include reading configuration data from a memory device to program a first portion of a PLD to function as a data decompression circuit (304, 308). Compressed configuration data may then be read and decompressed by the first portion and used to program a second portion (310, 312, 315) with a user determined function. A first portion may then be reprogrammed with a user determined function (320, 324).

Abstract: A method of converting or translating a layout or schematic netlist to a simulation netlist, comprising the steps of identifying net-shorting elements in the layout or schematic netlist and automatically replacing at least one such net-shorting element with an RC network to generate the simulation netlist.

Abstract: A programmable switch includes at least one or more pass transistors having a control voltage that is greater than the data path reference voltage that is selected by a corresponding pass transistor. The control voltage is provided by a higher voltage power supply than the power supply that provides the data path reference voltage. In one embodiment, the higher voltage supply is a quiet supply that is not loaded with devices that switch during normal operation of the programmable switch such as CMOS devices. In another embodiment, the power supply that provides a voltage to an I/O circuit of the probable switch is the power supply that is utilized to provide the control voltage to the pass transistors. In a particular embodiment, the pass transistors comprise higher voltage tolerant devices than other devices in the programmable device. In a particular embodiment, the higher voltage supply is at least the data path reference voltage plus the threshold voltage of the pass transistors.

Abstract: A circuit having an address circuit and a memory. The address circuit may be configured to (i) receive an address as a parallel input signal and as a serial input signal, (ii) present the address as an output address in one of an asynchronous mode, a synchronous mode, and a shift mode, and (iii) change the second address one by unit in a counter mode. The memory may be configured to receive the output address.

Abstract: The integrated circuit includes an input path circuit with an address path having an input buffer for providing address signals to a register. A separate clock path having an input buffer provides a clock signal for clocking the register. The input buffers of both the address path and the clock path include input buffer cells configured to reduce timing delay differences caused by process variations while minimizing current leakage. An exemplary input buffer cell described herein includes a first inverter stage with a pair of NMOS devices connected in series with a PMOS device and a second inverter stage having an additional PMOS device connected along a feedback path around an inverter. The PMOS device along the feedback path operates to assist the pair of NMOS devices to pull a voltage input to the inverter to a high logic state, when an input to the cell is held low, to prevent leakage current through the inverter.

Abstract: A circuit and method for controlling a wordline and/or stabilizing a memory cell comprising a first circuit and a second circuit. The first circuit may be configured to generate a control signal in response to (i) a select signal and (i) an equalization signal. The second may be configured to generate an output signal in response to (i) the control signal and (ii) a global wordline signal. The output signal may be presented to one or more memory cells of a memory array.

Abstract: A circuit and method comprising a memory array and a plurality of address circuits. The memory may comprise a plurality of storage elements each configured to read and write data in response to an internal address signal. The plurality of address circuits may each be configured to generate one of said internal address signals in response to (i) an external address signal, (ii) a clock signal and (iii) a control signal.

Abstract: A circuit and method comprising a memory array and a plurality of address circuits. The memory may comprise a plurality of storage elements each configured to read and write data in response to an internal address signal. The plurality of address circuits may each be configured to generate one of said internal address signals in response to (i) an external address signal, (ii) a clock signal and (iii) a control signal.

Abstract: A circuit and method for controlling a wordline and/or stabilizing a memory cell comprising a first circuit and a second circuit. The first circuit may be configured to generate a control signal in response to (i) a select signal and (ii) an equalization signal. The second may be configured to generate an output signal in response to (i) the control signal and (ii) a global wordline signal. The output signal may be presented to one or more memory cells of a memory array.

Abstract: The integrated circuit includes an input path circuit with an address path having an input buffer for providing address signals to a register. A separate clock path having an input buffer provides a clock signal for clocking the register. The input buffers of both the address path and the clock path include input buffer cells configured to reduce timing delay differences caused by process variations while minimizing current leakage. An exemplary input buffer cell described herein includes a first inverter stage with a pair of NMOS devices connected in series with a PMOS device and a second inverter stage having an additional PMOS device connected along a feedback path around an inverter. The PMOS device along the feedback path operates to assist the pair of NMOS devices to pull a voltage input to the inverter to a high logic state, when an input to the cell is held low, to prevent leakage current through the inverter.

Abstract: The integrated circuit includes an input path circuit with an address path having an input buffer for providing address signals to a register. A separate clock path having an input buffer provides a clock signal for clocking the register. The input path circuit also includes one or more decode units each having a number of logic gate cells such as NAND gate cells or NOR gate cells. Circuitry is provided within the logic gates for reducing timing delay differences between propagation of multiple bit binary signals, such as address signals, through the logic gates. In an exemplary NAND gate described herein, reduction in timing delay differences is achieved by positioning an additional PMOS device along a current path between a power source and an output path otherwise including only a pair of parallel PMOS devices.

Abstract: An improved burst address generator that is coupled to a memory array receives as its inputs a N-bit start address and dynamically generates a burst sequence of 2.sup.N decoded addresses. The burst address generator is responsive to a mode-select signal that determines whether the burst address generator operates in a linear mode or a non-linear mode. A decoder is provided for decoding the start address. A wrap-around up-down 2.sup.N -bit shift register, coupled to the address decoder, receives the decoded start address from the address decoder and dynamically provides the proper burst address sequences in accordance to the selected mode. A start address storage element is also coupled to the shift register and the address decoder to keep track of the start address.