Abstract: A memory that includes multiple banks, each of which include multiple data storage cells, is disclosed. A decoder circuit may be configured to receive and decode information indicative of an address, and select a particular bank based on the decoded information. A first latch circuit coupled to a particular global bit line, which is, in turn, coupled to the particular bank, may generate multiple local clock signals using the decoded information and store data based on a voltage level of the particular global bit line using the plurality of local clock signals. Other circuits may also pre-charge the particular global bit line using a particular local clock signal of the plurality of local clock signals.

Abstract: An apparatus for modifying a voltage level of a memory array power supply is disclosed. A first column may include a first plurality of data storage cells coupled to a first local power supply signal and a second column may include a second plurality of data storage cells coupled to a second local power supply signal. A first switch may be configured to selectively coupled the first local power supply signal to either a first power signal or a second power supply signal dependent upon a value of a first selection signal, and a second switch may be configured to selectively couple the second local power supply signal to either the first power supply signal or the second power supply signal dependent upon a value of a second selection signal.

Abstract: A first plurality of storage cells may be coupled to a first pair of data lines, and a second plurality of storage cells may be coupled to a second pair of data lines. Each storage cell in the first plurality of storage cells may be configured to generate a first output signal on the first pair of data lines in response to an assertion of a respective one of first plurality of selection signals, and each storage cell in the second plurality of storage cells may be configured to generate a second output signal on the second pair of data lines in response to the assertion of a respective one of a second plurality of selection signals. Circuitry may assert a given selection signal from either the first or second plurality of selection signals. An amplifier circuit may amplify either the first or second output signal.

Abstract: A first plurality of storage cells may be coupled to a first pair of data lines, and a second plurality of storage cells may be coupled to a second pair of data lines. Each storage cell in the first plurality of storage cells may be configured to generate a first output signal on the first pair of data lines in response to an assertion of a respective one of first plurality of selection signals, and each storage cell in the second plurality of storage cells may be configured to generate a second output signal on the second pair of data lines in response to the assertion of a respective one of a second plurality of selection signals. Circuitry may assert a given selection signal from either the first or second plurality of selection signals. An amplifier circuit may amplify either the first or second output signal.

Abstract: Embodiments of a jitter detection circuit are disclosed that may allow for detecting both cycle and phase jitter in a clock distribution network. The jitter detection circuit may include a phase selector, a data generator, a delay chain, a logic circuit, and clocked storage elements. The phase selector may be operable to select a clock phase to be used for the launch clock, and the data generator may be operable to generate a data signal responsive to the launch clock. The delay chain may generate a plurality of outputs dependent upon the data signal, and the clocked storage elements may be operable to capture the plurality of outputs from the delay chain, which may be compared to expected data by the logic circuit.

Abstract: A system, a memory device and a method are contemplated in which the apparatus may include a plurality of memory cells, a plurality of voltage reduction circuits, and control circuitry. The plurality of voltage reduction circuits may be configured to reduce a voltage level of a power supply coupled to the plurality of memory cells. The control circuitry may be configured to select one of the voltage reduction circuits based on one or more operating parameters. The control circuitry may be further configured to activate the selected voltage reduction circuit upon receiving a write command directed towards the memory cells. The control circuitry may be further configured to execute the write command. Upon completion of the write command, the control circuitry may be further configured to de-activate the selected one of the voltage reduction circuits.

Abstract: A method and various circuit embodiments for low latency initialization of an SRAM are disclosed. In one embodiment, an IC includes an SRAM coupled to at least one functional circuit block. The SRAM includes a number of storage location arranged in rows and columns. The functional circuit block and the SRAM may be in different power domains. Upon initially powering up or a restoration of power, the functional circuit block may assert an initialization signal to begin an initialization process. Responsive to the initialization signal, level shifters may force assertion of various select/enable signals in a decoder associated with the SRAM. Thereafter, initialization data may be written to the SRAM. Writing initialization data may be performed on a row-by-row basis, with all columns in a row being written to substantially simultaneously.

Abstract: A method and various circuit embodiments for low latency initialization of an SRAM are disclosed. In one embodiment, an IC includes an SRAM coupled to at least one functional circuit block. The SRAM includes a number of storage location arranged in rows and columns. The functional circuit block and the SRAM may be in different power domains. Upon initially powering up or a restoration of power, the functional circuit block may assert an initialization signal to begin an initialization process. Responsive to the initialization signal, level shifters may force assertion of various select/enable signals in a decoder associated with the SRAM. Thereafter, initialization data may be written to the SRAM. Writing initialization data may be performed on a row-by-row basis, with all columns in a row being written to substantially simultaneously.

Abstract: Embodiments of a jitter detection circuit are disclosed that may allow for detecting both cycle and phase jitter in a clock distribution network. The jitter detection circuit may include a phase selector, a data generator, a delay chain, a logic circuit, and clocked storage elements. The phase selector may be operable to select a clock phase to be used for the launch clock, and the data generator may be operable to generate a data signal responsive to the launch clock. The delay chain may generate a plurality of outputs dependent upon the data signal, and the clocked storage elements may be operable to capture the plurality of outputs from the delay chain, which may be compared to expected data by the logic circuit.

Abstract: An apparatus, system, and method are contemplated in which the apparatus may include a memory with a plurality of pages, circuitry, and a plurality of pre-charge circuits. The circuitry may be configured to receive a first read command and address, corresponding to a given page. The plurality of pre-charge circuits may be configured to charge a plurality of data lines to a predetermined voltage. The circuitry may be configured to read data values from the memory, and transfer the data values to the plurality of data lines. The plurality of pre-charge circuits may be configured to maintain the data on the plurality of data lines. The circuitry may select a first subset of the maintained data, receive a second read command and a second address by the memory, and select a second subset of the maintained data responsive to a determination that the second address corresponds to the given page.

Abstract: Embodiments of a register file test circuit are disclosed that may allow for determining write performance at low power supply voltages. The register file test circuit may include a decoder, a multiplexer, a frequency divider, and a control circuit. The decoder may be operable to select a register cell within a register file, and the control circuit may be operable to controllably activate the read and write paths through the selected register cell, allowing data read to be inverted and re-written back into the selected register cell.

Abstract: Embodiments of a jitter detection circuit are disclosed that may allow for detecting both cycle and phase jitter in a clock distribution network. The jitter detection circuit may include a phase selector, a data generator, a delay chain, a logic circuit, and clocked storage elements. The phase selector may be operable to select a clock phase to be used for the launch clock, and the data generator may be operable to generate a data signal responsive to the launch clock. The delay chain may generate a plurality of outputs dependent upon the data signal, and the clocked storage elements may be operable to capture the plurality of outputs from the delay chain, which may be compared to expected data by the logic circuit.

Abstract: A system, a memory device and a method are contemplated in which the apparatus may include a plurality of memory cells, a plurality of voltage reduction circuits, and control circuitry. The plurality of voltage reduction circuits may be configured to reduce a voltage level of a power supply coupled to the plurality of memory cells. The control circuitry may be configured to select one of the voltage reduction circuits based on one or more operating parameters. The control circuitry may be further configured to activate the selected voltage reduction circuit upon receiving a write command directed towards the memory cells. The control circuitry may be further configured to execute the write command. Upon completion of the write command, the control circuitry may be further configured to de-activate the selected one of the voltage reduction circuits.

Abstract: A system and method for efficiently handling misaligned memory accesses within a processor. A processor comprises a load-store unit (LSU) with a banked data cache (d-cache) and a banked store queue. The processor generates a first address corresponding to a memory access instruction identifying a first cache line. The processor determines the memory access is misaligned which crosses over a cache line boundary. The processor generates a second address identifying a second cache line logically adjacent to the first cache line. If the instruction is a load instruction, the LSU simultaneously accesses the d-cache and store queue with the first and the second addresses. If there are two hits, the data from the two cache lines are simultaneously read out. If the access is a store instruction, the LSU separates associated write data into two subsets and simultaneously stores these subsets in separate cache lines in separate banks of the store queue.

Abstract: A memory array includes a number of word lines, with each word line coupled to a word line driver for memory write operations and a word line driver for memory read operations. A decode stage includes write logic for each word line and read logic for each word line. A word line driver stage includes a write word line driver and a read word line driver. The write logic for at least one world line is configured to enable the write word line driver for a memory write operation of the word line while prohibiting the read word line logic from enabling the read word line driver for a memory read operation of the word line.

Abstract: A method and apparatus for preventing contention during the sequenced power up of an electronic system is disclosed. In one embodiment, an apparatus includes first and second power domains configured to receive power from first and second power sources, respectively. During a power up sequence, the first power source is configured to provide power prior to the second power source. A power detection circuit is configured to detect the presence of power from both of the first and second power sources. If power has not been detected from the second power source, a signal provided to a clamping circuit is asserted. When the signal is asserted by the power detection circuit, the clamping circuit may inhibit the control signal received from the second power domain from being provided to a power switch in the first power domain.

Abstract: A sense amplifier test circuit that may allow for detecting soft failures may include a voltage generator circuit, a sense amplifier, and a detection circuit. The voltage generator may be operable to controllably supply different differential voltages to the sense amplifier, and the detection circuit may be operable to detect an analog voltage on the output of the sense amplifier.

Abstract: A dynamic level shifter circuit and a ring oscillator implemented using the same are disclosed. A dynamic level shifter may include a pull-down circuit and a pull-up circuit. The pull-up circuit may include an extra transistor configured to reduce the current through that circuit when the pull-down circuit is activated. A ring oscillator may be implemented using instances of the dynamic level shifter along with instances of a static level shifter. The ring oscillator may also include a pulse generator configured to initiate oscillation. The ring oscillator implemented with dynamic level shifters may be used in conjunction with another ring oscillator implemented using only static level shifters to compare relative performance levels of the static and dynamic level shifters.

Abstract: A zero keeper circuit includes a dynamic input PFET connected to a source, an output, and a dynamic input. The circuit also includes a clock input NFET connected to the output, a pull-down node, and a clock input. The circuit also includes a dynamic input NFET connected to the pull-down node, a reference voltage, and the dynamic input. The circuit also includes a feedback PFET and a clock input PFET connected in series between the source and the output. The feedback PFET receives a feedback signal and the clock input PFET receives the clock input. The circuit also includes a feedback NFET connected to the output and the node. The feedback NFET is configured to couple the output to the node based on the feedback signal. The circuit also includes a NOR gate configured to provide the feedback signal based on the output and a bypass input.

Abstract: A zero keeper circuit includes a dynamic input PFET connected to a source, an output, and a dynamic input. The circuit also includes a clock input NFET connected to the output, a pull-down node, and a clock input. The circuit also includes a dynamic input NFET connected to the pull-down node, a reference voltage, and the dynamic input. The circuit also includes a feedback PFET and a clock input PFET connected in series between the source and the output. The feedback PFET receives a feedback signal and the clock input PFET receives the clock input. The circuit also includes a feedback NFET connected to the output and the node. The feedback NFET is configured to couple the output to the node based on the feedback signal. The circuit also includes a NOR gate configured to provide the feedback signal based on the output and a bypass input.