Patents by Inventor Greg Sexton
Greg Sexton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8940098Abstract: A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.Type: GrantFiled: July 2, 2013Date of Patent: January 27, 2015Assignee: Lam Research CorporationInventors: Greg Sexton, Andrew D. Bailey, III, Alan Schoepp
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Patent number: 8826857Abstract: In one embodiment, a plasma processing assembly may include an upper process body coupled to a hinge body and a lower process body coupled to a base hinge member. The hinge body can be pivotally engaged with the base hinge member. A self locking latch can be pivotally engaged with the base hinge member. When the hinge body is rotated around the first axis of rotation, the protruding latch engagement member can contact the self locking latch and can rotate the self locking latch around the second axis of rotation opposite to the bias direction. The self locking latch can rotate around the second axis of rotation in the bias direction and can block the hinge body from rotating around the first axis of rotation.Type: GrantFiled: December 9, 2011Date of Patent: September 9, 2014Assignee: Lam Research CorporationInventor: Greg Sexton
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Patent number: 8671965Abstract: An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve.Type: GrantFiled: November 5, 2012Date of Patent: March 18, 2014Assignee: Lam Research CorporationInventors: Miguel A. Saldana, Greg Sexton
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Publication number: 20130276821Abstract: A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.Type: ApplicationFiled: July 2, 2013Publication date: October 24, 2013Inventors: Greg Sexton, Andrew D. Bailey, III, Alan Schoepp
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Patent number: 8475624Abstract: A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.Type: GrantFiled: April 6, 2007Date of Patent: July 2, 2013Assignee: Lam Research CorporationInventors: Greg Sexton, Andrew Bailey, III, Alan Schoen
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Publication number: 20130126092Abstract: In one embodiment, a plasma processing assembly may include an upper process body coupled to a hinge body and a lower process body coupled to a base hinge member. The hinge body can be pivotally engaged with the base hinge member. A self locking latch can be pivotally engaged with the base hinge member. When the hinge body is rotated around the first axis of rotation, the protruding latch engagement member can contact the self locking latch and can rotate the self locking latch around the second axis of rotation opposite to the bias direction. The self locking latch can rotate around the second axis of rotation in the bias direction and can block the hinge body from rotating around the first axis of rotation.Type: ApplicationFiled: December 9, 2011Publication date: May 23, 2013Applicant: LAM RESEARCH CORPORATIONInventor: Greg Sexton
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Publication number: 20130056078Abstract: An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve.Type: ApplicationFiled: November 5, 2012Publication date: March 7, 2013Inventors: Miguel A. Saldana, Greg Sexton
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Patent number: 8328980Abstract: An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber is disclosed. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve.Type: GrantFiled: September 4, 2009Date of Patent: December 11, 2012Assignee: Lam Research CorporationInventors: Miguel A. Saldana, Greg Sexton
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Patent number: 8137501Abstract: An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.Type: GrantFiled: February 8, 2007Date of Patent: March 20, 2012Assignee: Lam Research CorporationInventors: Yunsang Kim, Andrew Bailey, III, Greg Sexton, Keechan Kim, Andras Kuthi
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Publication number: 20110059614Abstract: An apparatus to supply a plurality of process fluids for processing a substrate in a semiconductor processing chamber is disclosed. The apparatus includes a plurality of process fluid supply valves and a fluid supply network that is defined between a crossover valve and a tuning supply valve. The apparatus further includes a tuning fluid supply being connected to the fluid supply network through the tuning supply valve. Further included with the apparatus is a plurality of process fluids that are connected to the fluid supply network through the plurality of process fluid supply valves. A process chamber that has a substrate support is also included in the apparatus. The process chamber further including an edge fluid supply and a center fluid supply, the edge fluid supply connected to the fluid supply network through an edge enable valve and the center supply connected to the fluid supply network through a center enable valve.Type: ApplicationFiled: September 4, 2009Publication date: March 10, 2011Inventors: Miguel A. Saldana, Greg Sexton
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Publication number: 20080216864Abstract: A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.Type: ApplicationFiled: April 6, 2007Publication date: September 11, 2008Inventors: Greg Sexton, Andrew Bailey, Alan Schoepp
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Publication number: 20080190448Abstract: An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.Type: ApplicationFiled: February 8, 2007Publication date: August 14, 2008Inventors: Yunsang Kim, Andrew Bailey, Greg Sexton, Keechan Kim, Andras Kuthi
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Patent number: 6669783Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.Type: GrantFiled: June 28, 2001Date of Patent: December 30, 2003Assignee: Lam Research CorporationInventors: Greg Sexton, Alan Schoepp, Mark Allen Kennard
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Patent number: 6567258Abstract: A hot electrostatic chuck having an expansion joint between a chuck body and a heat transfer body. The expansion joint provides a hermetic seal, accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or controls the amount of heat conducted from the chuck body to the heat transfer body. A plenum between spaced apart surfaces of the chuck body and the heat transfer body is filled with a heat transfer gas such as helium which passes through gas passages such as lift pin holes in the chuck body for backside cooling of a substrate supported on the chuck. The heat transfer gas in the plenum also conducts heat from the chuck body into the heat transfer body. The chuck body can be made of a material with desired electrical and/or thermal properties such as a metallic material or ceramic material. The chuck can be used in various semiconductor processes such as plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc.Type: GrantFiled: February 15, 2002Date of Patent: May 20, 2003Assignee: Lam Research CorporationInventors: Greg Sexton, Mark Allen Kennard, Alan Schoepp
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Publication number: 20030003749Abstract: An electrostatic chuck suitable for use at high temperatures having a replaceable expansion assembly, functioning as an outer tubulation and heat choke, between a chuck body and a heat transfer body. The expansion assembly accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or limits direct heat conduction from the chuck body to the heat transfer body. The ability to operate the chuck at temperatures in excess of 200° C. allows it to be used for plasma etching of materials, such as platinum, which require high temperatures to volatilize low volatility etch products as well as routine plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc. The novel design of the removably attached expansion assembly allows the chuck to be scaled for larger workpieces, to remain serviceable through more heating cycles, and to be economically serviced.Type: ApplicationFiled: June 28, 2001Publication date: January 2, 2003Inventors: Greg Sexton, Alan Schoepp, Mark Allen Kennard
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Publication number: 20020075625Abstract: A hot electrostatic chuck having an expansion joint between a chuck body and a heat transfer body. The expansion joint provides a hermetic seal, accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or controls the amount of heat conducted from the chuck body to the heat transfer body. A plenum between spaced apart surfaces of the chuck body and the heat transfer body is filled with a heat transfer gas such as helium which passes through gas passages such as lift pin holes in the chuck body for backside cooling of a substrate supported on the chuck. The heat transfer gas in the plenum also conducts heat from the chuck body into the heat transfer body. The chuck body can be made of a material with desired electrical and/or thermal properties such as a metallic material or ceramic material. The chuck can be used in various semiconductor processes such as plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc.Type: ApplicationFiled: February 15, 2002Publication date: June 20, 2002Inventors: Greg Sexton, Mark Allen Kennard, Alan Schoepp
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Patent number: 6377437Abstract: A hot electrostatic chuck having an expansion joint between a chuck body and a heat transfer body. The expansion joint provides a hermetic seal, accommodates differential thermal stresses between the chuck body and the heat transfer body, and/or controls the amount of heat conducted from the chuck body to the heat transfer body. A plenum between spaced apart surfaces of the chuck body and the heat transfer body is filled with a heat transfer gas such as helium which passes through gas passages such as lift pin holes in the chuck body for backside cooling of a substrate supported on the chuck. The heat transfer gas in the plenum also conducts heat from the chuck body into the heat transfer body. The chuck body can be made of a material with desired electrical and/or thermal properties such as a metallic material or ceramic material. The chuck can be used in various semiconductor processes such as plasma etching, chemical vapor deposition, sputtering, ion implantation, ashing, etc.Type: GrantFiled: December 22, 1999Date of Patent: April 23, 2002Assignee: Lam Research CorporationInventors: Greg Sexton, Mark Allen Kennard, Alan Schoepp