Patents by Inventor Greg Siu

Greg Siu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming TiSiN thin film layer by using atomic layer deposition
    Patent number: 9159608
    Abstract: There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or N2 containing inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of
    Type: Grant
    Filed: April 8, 2013
    Date of Patent: October 13, 2015
    Assignee: Aixtron SE
    Inventors: Woong Park, Young Jin Jang, Gi Youl Kim, Brian Lu, Greg Siu, Hugo Silva, Sasangan Ramanathan
  • METHOD FOR FORMING TiSiN THIN FILM LAYER BY USING ATOMIC LAYER DEPOSITION
    Publication number: 20150050806
    Abstract: There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or N2 containing inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of
    Type: Application
    Filed: April 8, 2013
    Publication date: February 19, 2015
    Inventors: Woong Park, Young Jin Jang, Gi Youl Kim, Brian Lu, Greg Siu, Hugo Silva, Sasangan Ramanathan