Patents by Inventor Gregg A. Norris
Gregg A. Norris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7663125Abstract: An ion beam current uniformity monitor, ion implanter and related method are disclosed. In one embodiment, the ion beam current uniformity monitor includes an ion beam current measurer including a plurality of measuring devices for measuring a current of an ion beam at a plurality of locations; and a controller for maintaining ion beam current uniformity based on the ion beam current measurements by the ion beam current measurer.Type: GrantFiled: March 29, 2007Date of Patent: February 16, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: William G. Callahan, Morgan D. Evans, George M. Gammel, Norman E. Hussey, Gregg A. Norris, Joseph C. Olson
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Patent number: 7564048Abstract: A Faraday sensor test system includes a Faraday sensor configured to intercept a quantity of ions incident on said Faraday sensor, a primary conductor and a test conductor coupled to said Faraday sensor, and a controller. The controller is configured to automatically provide a test current into the test conductor in response to a test condition. The controller is further configured to receive a return current from the primary conductor in response to the test current and to compare the return current to a value representative of the test current to determine a condition of a conductive path comprising the test conductor, the Faraday sensor, and the primary conductor.Type: GrantFiled: June 30, 2006Date of Patent: July 21, 2009Assignee: Varian Semiconductor E1quipment Associates, Inc.Inventors: Joseph P. Dzengeleski, Greg Gibilaro, Gregg Norris, David Olden, Tamer Onat
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Patent number: 7453070Abstract: A beam density measurement system includes a shield, a beam sensor, and an actuator. The beam sensor is positioned downstream from the shield in a direction of travel of a beam. The beam sensor is configured to sense an intensity of the beam, and the beam sensor has a long dimension and a short dimension. The actuator translates the shield relative to the beam sensor, wherein the shield blocks at least a portion of the beam from the beam sensor as the shield is translated relative to the beam sensor, and wherein measured values of the intensity associated with changes in a position of the shield relative to the beam sensor are representative of a beam density distribution of the beam in a first direction defined by the long dimension of the beam sensor.Type: GrantFiled: June 29, 2006Date of Patent: November 18, 2008Assignee: Varian Semiconductor Associates, Inc.Inventors: Atul Gupta, Joseph C. Olson, Gregg A. Norris
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Patent number: 7442944Abstract: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.Type: GrantFiled: October 7, 2004Date of Patent: October 28, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Shengwu Chang, Antonella Cucchetti, Joseph P. Dzengeleski, Gregory R. Gibilaro, Rosario Mollica, Gregg A. Norris, Joseph C. Olson, Marie J. Welsch
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Publication number: 20080073550Abstract: A beam density measurement system includes a shield, a beam sensor, and an actuator. The beam sensor is positioned downstream from the shield in a direction of travel of a beam. The beam sensor is configured to sense an intensity of the beam, and the beam sensor has a long dimension and a short dimension. The actuator translates the shield relative to the beam sensor, wherein the shield blocks at least a portion of the beam from the beam sensor as the shield is translated relative to the beam sensor, and wherein measured values of the intensity associated with changes in a position of the shield relative to the beam sensor are representative of a beam density distribution of the beam in a first direction defined by the long dimension of the beam sensor.Type: ApplicationFiled: June 29, 2006Publication date: March 27, 2008Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Atul Gupta, Joseph C. Olson, Gregg A. Norris
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Publication number: 20080073584Abstract: An ion beam current uniformity monitor, ion implanter and related method are disclosed. In one embodiment, the ion beam current uniformity monitor includes an ion beam current measurer including a plurality of measuring devices for measuring a current of an ion beam at a plurality of locations; and a controller for maintaining ion beam current uniformity based on the ion beam current measurements by the ion beam current measurer.Type: ApplicationFiled: March 29, 2007Publication date: March 27, 2008Inventors: William G. Callahan, Morgan D. Evans, George M. Gammel, Norman E. Hussey, Gregg A. Norris, Joseph C. Olson
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Publication number: 20080073551Abstract: A Faraday sensor test system includes a Faraday sensor configured to intercept a quantity of ions incident on said Faraday sensor, a primary conductor and a test conductor coupled to said Faraday sensor, and a controller. The controller is configured to automatically provide a test current into the test conductor in response to a test condition. The controller is further configured to receive a return current from the primary conductor in response to the test current and to compare the return current to a value representative of the test current to determine a condition of a conductive path comprising the test conductor, the Faraday sensor, and the primary conductor.Type: ApplicationFiled: June 30, 2006Publication date: March 27, 2008Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Joseph P. Dzengeleski, Greg Gibilaro, Gregg Norris, David Olden
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Publication number: 20060284114Abstract: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.Type: ApplicationFiled: December 15, 2005Publication date: December 21, 2006Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Joseph Olson, Jonathan England, Morgan Evans, Douglas Fielder, Gregg Norris, Shengwu Chang, Damian Brennan, William Callahan
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Publication number: 20060076510Abstract: An ion beam tuning method, system and program product for tuning an ion implanter system are disclosed. The invention obtains an ion beam profile of the ion beam by, for example, scanning the ion beam across a profiler that is within an implant chamber; and tunes the ion implanter system to maximize an estimated implant current based on the ion beam profile to simultaneously optimize total ion beam current and ion beam spot width, and maximize implant current. In addition, the tuning can also position the ion beam along a desired ion beam path based on the feedback of the spot beam center, which improves ion implanter system productivity and performance by reducing ion beam setup time and provides repeatable beam angle performance for each ion beam over many setups.Type: ApplicationFiled: October 7, 2004Publication date: April 13, 2006Inventors: Shengwu Chang, Antonella Cucchetti, Joseph Dzengeleski, Gregory Gibilaro, Rosario Mollica, Gregg Norris, Joseph Olson, Marie Welsch