Patents by Inventor Gregg Alexander

Gregg Alexander has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11125070
    Abstract: A method, system, and computer readable medium for managing drilling operations include calibrating a drilling model using collected drilling data, and executing, during a drilling operation, a simulation on the drilling model to generate a predicted measurement value for a drilling property. During the drilling operation and from a drillstring, an actual measurement value for the drilling property is obtained. Based on the actual measurement value matching the predicted measurement value, the simulation is extended to generate a simulated state of the drilling operation during the drilling operation, and a condition of the drilling operation is detected. A notification may be presented based on the condition during the drilling operation.
    Type: Grant
    Filed: May 4, 2016
    Date of Patent: September 21, 2021
    Assignee: Schlumberger Technology Corporation
    Inventors: Yuelin Shen, Wei Chen, Gang Xu, Guishui Zheng, Rongbing Chen, Riadh Boualleg, My Lien Ta, Gregg Alexander, Sujian Huang
  • Publication number: 20180119535
    Abstract: A method, system, and computer readable medium for managing drilling operations include calibrating a drilling model using collected drilling data, and executing, during a drilling operation, a simulation on the drilling model to generate a predicted measurement value for a drilling property. During the drilling operation and from a drillstring, an actual measurement value for the drilling property is obtained. Based on the actual measurement value matching the predicted measurement value, the simulation is extended to generate a simulated state of the drilling operation during the drilling operation, and a condition of the drilling operation is detected. A notification may be presented based on the condition during the drilling operation.
    Type: Application
    Filed: May 4, 2016
    Publication date: May 3, 2018
    Inventors: Yuelin Shen, Wei Chen, Gang Xu, Guishui Zheng, Rongbing Chen, Riadh Boualleg, My Lien Ta, Gregg Alexander, Sujian Huang
  • Patent number: 8956555
    Abstract: Silylethynyl pentacenes and compositions containing silylethynyl pentacenes are disclosed. Exemplary pentacene compounds have 6,13-silylethynyl substitution with one or more groups (e.g., R, R? and R?) covalently bonded to each Si atom of the silylethynyl groups. Methods of making and using silylethynyl pentacenes and compositions containing silylethynyl pentacenes are also disclosed. Substrates and devices comprising the silylethynyl pentacenes and compositions are also disclosed.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: February 17, 2015
    Assignees: 3M Innovative Properties Company, Outrider Technologies
    Inventors: Gregg Alexander Caldwell, Robert Steven Clough, James Craig Novack, David Howard Redinger, Dennis Edward Vogel, John E. Anthony, Marcia M. Payne
  • Publication number: 20110073813
    Abstract: Silylethynyl pentacenes and compositions containing silylethynyl pentacenes are disclosed. Exemplary pentacene compounds have 6,13-silylethynyl substitution with one or more groups (e.g., R, R? and R?) covalently bonded to each Si atom of the silylethynyl groups. Methods of making and using silylethynyl pentacenes and compositions containing silylethynyl pentacenes are also disclosed. Substrates and devices comprising the silylethynyl pentacenes and compositions are also disclosed.
    Type: Application
    Filed: May 29, 2009
    Publication date: March 31, 2011
    Inventors: Gregg Alexander Caldwell, Robert Steven Clough, James Craig Novack, David Howard Redinger, Dennis Edward Vogel, John E. Anthony, Marcia M. Payne
  • Patent number: 7355188
    Abstract: A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.
    Type: Grant
    Filed: December 15, 2005
    Date of Patent: April 8, 2008
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Joseph C. Olson, Jonathan Gerald England, Morgan D. Evans, Douglas Thomas Fielder, Gregg Alexander Norris, Shengwu Chang, Damian Brennan, William Gray Callahan
  • Patent number: 7176470
    Abstract: A technique for high-efficiency ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for high-efficiency ion implantation. The apparatus may comprise one or more measurement devices to determine a shape of an ion beam spot in a first dimension and a second dimension. The apparatus may also comprise a control module to control movement of the ion beam across a substrate according to a two-dimensional velocity profile, wherein the two-dimensional velocity profile is determined based at least in part on the shape of the ion beam spot, and wherein the two-dimensional velocity profile is tunable to maintain a uniform ion dose and to keep the ion beam spot from going fully off the substrate surface.
    Type: Grant
    Filed: December 22, 2005
    Date of Patent: February 13, 2007
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Morgan D. Evans, Douglas Thomas Fielder, Gregg Alexander Norris