Abstract: A method for making an integrated circuit capacitor includes forming an interconnection line adjacent a substrate, forming a first dielectric layer on the interconnection line, forming a first opening in the first dielectric layer, and forming a second opening in the interconnection line aligned with the first opening and having an enlarged width portion greater than a width of the first opening. The method further includes filling the first and second openings with a conductive metal to define a metal plug having a body portion and an anchor portion adjacent lower portions of the first dielectric layer. The method also includes forming a trench in the first dielectric layer adjacent the body portion of the metal plug, forming a first electrode lining the trench and contacting the metal plug, forming a second dielectric layer on the first electrode, and forming a second electrode on the second dielectric layer.

Abstract: An integrated circuit capacitor includes a substrate with an interconnection line adjacent the substrate, and a first dielectric layer on the interconnection line. The first dielectric layer includes a trench therein. The metal plug includes a body portion extending upwardly into the trench, and an anchor portion is connected to the body portion and extends into the interconnection line. The anchor portion has an enlarged width portion to anchor the metal plug adjacent lower portions of the first dielectric layer. Because the metal plug is anchored, a depth of the trench can be greater without the metal plug becoming loose and separating from the underlying interconnection line.

Abstract: Crochralski wafers are desirably thermally processed at an elevated temperature prior to integrated circuit fabrication. The thermal processing reduces the number of oxygen nucleation centers and prevents subsequent oxygen precipitation from interfering with iron contamination measurements.