Patents by Inventor Gregor A. Campbell
Gregor A. Campbell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5656141Abstract: Apparatus for coating substrates 31, 31", . . . in a vacuum chamber 2 including a substrate carrier 30 disposed therein and a device 29 for generating a first plasma cloud 28 and, further, including magnets 26, 27 directing the plasma cloud 28 onto the surface of the substrates 31, 31" . . . wherein this device for generating the plasma cloud 28 has an election emitter 11 and a downstream tubular anode 38, the anode has an inlet 10 for the process gas to ignite the plasma and, further, the device is provided with magnets 4, 7 for directing and guiding the plasma through the anode tube 38 into the process chamber 43 and including a device for generating atoms, molecules or clusters of the materials for producing a layer on the substrates 31, 31", . . . , preferably an electron beam evaporator 37 from which the evaporated or sputtered material 33 can be directly applied onto the substrates 31, 31" . . . .Type: GrantFiled: February 20, 1996Date of Patent: August 12, 1997Assignee: Leybold AktiengesellschaftInventors: Hans-Georg Betz, Gregor A. Campbell, Robert W. Conn, Karl Matl, Peter Sommerkamp, Alfons Zoeller, Dan M. Goebel
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Patent number: 5429070Abstract: Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. The plasma source may include a sapphire or alumina source tube for use with plasmas containing fluorine. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the axis of the plasma source and the substrate process chamber. Preferably a first current is provided through the inner coil and a second current in a direction opposite to the direction of the first current is provided through the outer coil. The inner and outer coils are wrapped with a thin sheet of conducting material to shield the coils from RF signal generated by the plasma source.Type: GrantFiled: November 20, 1992Date of Patent: July 4, 1995Assignee: Plasma & Materials Technologies, Inc.Inventors: Gregor A. Campbell, Robert W. Conn, Dan Katz, N. William Parker, Alexis de Chambrier
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Patent number: 5421891Abstract: Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the axis of the plasma source and the substrate process chamber. Preferably, a first current is provided through the inner coil and a second current in a direction opposite to the direction of the first current is provided through the outer coil. The result is to advantageously shape the magnetic field in the process chamber to achieve extremely uniform processing, particularly when a unique diamond shaped pattern of gas feed lines is used wherein the diamond is arranged to be approximately tangent at four places to the outer circumference of the workpiece being processed in the apparatus.Type: GrantFiled: October 19, 1992Date of Patent: June 6, 1995Assignee: Plasma & Materials Technologies, Inc.Inventors: Gregor A. Campbell, Robert W. Conn, Dan Katz, N. William Parker, David I. C. Pearson
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Patent number: 5122251Abstract: A high density ionized plasma is generated in a source chamber using a single loop disposed in a plane that intercepts the central axis of the source chamber perpendicularly or at a lesser angle and spaced from the closed end of the chamber. With a longitudinal magnetic field and an inert or reactive gas injected into the source chamber, excitation of the antenna with RF energy in the 5 to 30 MHz establishes the M=0 excitation mode or components of both the M=0 and M=1 modes. Low frequency whistler waves are created which generate a uniform and high density plasma and high plasma current. The plasma source thus defined is used in combination with process chamber configurations in which static shaped or time modulated magnetic fields enhance the distribution and uniformity of the plasma at a substrate to be etched, deposited or sputtered.Type: GrantFiled: February 4, 1991Date of Patent: June 16, 1992Assignee: Plasma & Materials Technologies, Inc.Inventors: Gregor A. Campbell, Robert W. Conn, David C. Pearson, Alexis P. deChambrier, Tatsuo Shoji
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Patent number: 5091049Abstract: The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).Type: GrantFiled: June 29, 1990Date of Patent: February 25, 1992Assignee: Plasma & Materials Technologies, Inc.Inventors: Gregor Campbell, Robert W. Conn, Tatsuo Shoji
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Patent number: 4990229Abstract: The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).Type: GrantFiled: June 13, 1989Date of Patent: February 5, 1991Assignee: Plasma & Materials Technologies, Inc.Inventors: Gregor Campbell, Robert W. Conn, Tatsuo Shoji
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Patent number: 4885070Abstract: An apparatus to apply materials to a substrate disposed in a vacuum chamber is disclosed. A separate generator chamber containing an electron emitter is connected to the vacuum chamber by a process chamber so that a plasma of controllable cross-sectional shape and large area is formed and guided by magnets toward a target system. Positive ions may be accelerated against the target by applying an adjustable negative voltage.Type: GrantFiled: May 20, 1988Date of Patent: December 5, 1989Assignee: Leybold AktiengesellschaftInventors: Gregor A. Campbell, Robert W. Conn, Dan M. Goebel, Rolf Adam, Hans Aichert, Hans Betz, Anton Dietrich, Gonde Dittmer, Klaus Hartig, Friedrich Hass, Rainer Ludwig, Max Mayr, Alfred Thelen