Abstract: A method for voltage contrast imaging, for example on a semiconductor sample, uses a corpuscular multi-beam microscope with a multiplicity of individual corpuscular beams in a grid arrangement. The method includes sweeping the multiplicity of individual corpuscular beams over a sample having at least one electrically chargeable structure, and charging the sample with a first quantity of first corpuscular beams of the corpuscular multi-beam microscope. The method also includes determining a voltage contrast at the at least one electrically chargeable structure of the sample with a second quantity of second corpuscular beams of the corpuscular multi-beam microscope.