Abstract: A millimetric-wave amplifier arrangement comprises a first amplifier whose output is connected to one input of the second amplifier via an adjustable attenuator. Both amplifiers are integrated on a single substrate.

Abstract: An integrated semiconductor mixer includes a substrate (10), a radio-frequency balun (12) disposed on the substrate (10), a local oscillator balun (14) disposed on the substrate (10), an intermediate-frequency port (16) disposed on the substrate (10), and a mixer diode array (18), disposed on the substrate (10), that communicates with the radio-frequency balun (12), the local oscillator balun (14), and the intermediate-frequency port (16), in which the radio-frequency balun (12) is shielded from the local oscillator balun (14) by plated holes (20).

Abstract: A millimetric-wave amplifier arrangement comprises a first amplifier whose output is connected to one input of the second amplifier via an adjustable attenuator. Both amplifiers are integrated on a single substrate.

Abstract: A monolithically integrated microwave guide component for overcoupling high frequencies includes a first micro-waveguide that is structured on a micro-waveguide chip, and comprises a second micro-waveguide that is structured on a carrier substrate. The microwave guides are contacted to one another by a chip through-plating. The microwave guides each include, in the contact region, an integrated compensating structure that serves to compensate for reflections.

Abstract: A monolithically integrated microwave guide component for overcoupling high frequencies includes a first micro-waveguide that is structured on a micro-waveguide chip, and comprises a second micro-waveguide that is structured on a carrier substrate. The microwave guides are contacted to one another by a chip through-plating. The microwave guides each include, in the contact region, an integrated compensating structure that serves to compensate for reflections.

Abstract: A balancing network has three planar lines which are coupled together. One end of the first line which runs between the second and the third line acts as an unbalanced gate. The opposite end of the first line is connected to earth, and one end of each of the other two lines forms a balanced gate. The balancing network is decoupled from the direct current source. The ends of the second and third lines, which do not act as gates, are capacitively coupled with one another.

Abstract: The invention relates to an integrated semiconductor mixer, having a substrate (10), a radio-frequency balun (12) disposed on the substrate (10), a local oscillator balun (14) disposed on the substrate (10), an intermediate-frequency port (16) disposed on the substrate (10), and a mixer diode array (18), disposed on the substrate (10), that communicates with the radio-frequency balun (12), the local oscillator balun (14), and the intermediate-frequency port (16), in which the radio-frequency balun (12) is shielded from the local oscillator balun (14) by plated holes (20).

Abstract: A monolithic integrated circuit has a plurality of capacitors forming a bypass to ground, each of the capacitors being composed of two conductive coatings layers which are arranged on a substrate and separated from one another by a dielectric layer, a lower one of the coatings located on the substrate under the dielectric layer contacting with a ground conductor on an opposite substrate side, and the lower coatings of the capacitors being connected with one another, while only one upper coating which belongs to a capacitor is contacted through a through contacting in the substrate with the ground conductor.

Abstract: A monolithic integrated circuit has a plurality of capacitors forming a bypass to ground, each of the capacitors being composed of two conductive coatings layers which are arranged on a substrate and separated from one another by a dielectric layer, a lower one of the coatings located on the substrate under the dielectric layer contacting with a ground conductor on an opposite substrate side, and the lower coatings of the capacitors being connected with one another, while only one upper coating which belongs to a capacitor is contacted through a through contacting in the substrate with the ground conductor.