Abstract: A method for the operation of a plasma device (100) is described in which particles (2) are arranged in a plasma, wherein a generation of electric travelling waves (1) is provided, under whose effective action the particles (2) in the plasma device (100) perform a directed movement to at least one pre-determined collection area (20, 20A). A plasma device for carrying out the method is also described.

Abstract: A method for producing particles having a monocrystalline diamond structure, comprises the steps of operating a plasma chamber (100) containing a reaction gas with at least one carbon compound and generating a reactive plasma, providing seed particles in said plasma chamber (100) which are arranged under the influence of external gravity compensating forces within the reactive plasma, and polydirectional growing carbon with diamond structure on said seed particles, so that growing diamond containing particles are formed.

Abstract: In order to segment a distribution of points into partial areas with predetermined structural elements, a feature vector ({right arrow over (x)}i) whose components are determined based on several scaling factors is ascertained for each point ({right arrow over (p)}i); the accompanying feature vectors ({right arrow over (p)}il) are determined for a predetermined number of reference points ({right arrow over (p)}il) for which the respective allocation to one of the structural elements is given, and texture classes each corresponding to the underlying structural elements are formed out of the feature vectors of the reference points; a distance to each of the texture classes is determined for all remaining points ({right arrow over (p)}iu) of the point distribution that are not reference points ({right arrow over (p)}iu); and the partial areas of the segmentation are formed out of the reference points respectively belonging to a texture class and the allocated points.

Abstract: A process for manipulating particles distributed substantially non-uniformly in a plasma of a carrier or reaction gas, wherein Coulomb interaction between the particles is so low that the particles substantially do not form a plasmacrystalline state, and the particles are exposed in a location-selective manner to external adjustment forces and/or the plasma conditions are subjected to a location-selective change to apply at least a portion of the particles onto a substrate surface mask-free and/or subject it to a location-selective plasma treatment in the carrier or reaction gas.

Abstract: A process for manipulating particles distributed substantially non-uniformly in a plasma of a carrier or reaction gas, wherein Coulomb interaction between the particles is so low that the particles substantially do not form a plasmacrystalline state, and the particles are exposed in a location-selective manner to external adjustment forces and/or the plasma conditions are subjected to a location-selective change to apply at least a portion of the particles onto a substrate surface mask-free and/or subject it to a location-selective plasma treatment in the carrier or reaction gas.

Abstract: A process for manipulating particles distributed substantially non-uniformly in a plasma of a carrier or reaction gas, wherein Coulomb interaction between the particles is so low that the particles substantially do not form a plasmacrystalline state, and the particles are exposed in a location-selective manner to external adjustment forces and/or the plasma conditions are subjected to a location-selective change to apply at least a portion of the particles onto a substrate surface mask-free and/or subject it to a location-selective plasma treatment in the carrier or reaction gas.

Abstract: In a method for manipulating particles arranged in a plasma-cristalline state in a plasma of a carrier gas, the particles are at least partially subject to plasma treatment and/or applied to a substrate surface. A device for manipulating of particles in plasma-cristalline state includes a reaction vessel, in which plasma electrodes and at least one substrate are situated. An adaptive electrode for formation of a location selective low frequency or static electrical field in the reaction vessel is described.

Abstract: In a process for detecting target patterns in a texture with which a system state can be represented as a distribution of points in an n-dimensional space, anisotropic scaling factors a.sub.ji are determined which are characteristic of the relationship between the projection of the point density onto coordinate j and the distance to examined point P.sub.i. A target is detected if the distribution of scaling factors deviates from predetermined comparison distributions of systems without target patterns.