Patents by Inventor Gregor Tretter

Gregor Tretter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Field-effect transistor arrangement and method for setting a drain current of a field-effect transistor
    Patent number: 11165424
    Abstract: A field-effect transistor system is provided that comprises a field-effect transistor having a back-gate terminal that can be adjusted by a back-gate voltage, a gate-source voltage and a drain-source voltage additionally being present at the field-effect transistor, and a drain current flowing through the field-effect transistor. In addition, the field-effect transistor system includes a control unit connected to the back-gate terminal, which unit is set up to set the drain current flowing through the field-effect transistor to a setpoint current via a controlling of the back-gate voltage at the back-gate terminal, the controlling of the back-gate voltage taking place as a function of at least the gate-source voltage. In addition, a method is provided for setting a drain current of a field-effect transistor.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: November 2, 2021
    Assignee: Robert Bosch GmbH
    Inventors: Gregor Tretter, Reiner Schnitzer, Thomas Schwarzenberger
  • FIELD-EFFECT TRANSISTOR ARRANGEMENT AND METHOD FOR SETTING A DRAIN CURRENT OF A FIELD-EFFECT TRANSISTOR
    Publication number: 20200304118
    Abstract: A field-effect transistor system is provided that comprises a field-effect transistor having a back-gate terminal that can be adjusted by a back-gate voltage, a gate-source voltage and a drain-source voltage additionally being present at the field-effect transistor, and a drain current flowing through the field-effect transistor. In addition, the field-effect transistor system includes a control unit connected to the back-gate terminal, which unit is set up to set the drain current flowing through the field-effect transistor to a setpoint current via a controlling of the back-gate voltage at the back-gate terminal, the controlling of the back-gate voltage taking place as a function of at least the gate-source voltage. In addition, a method is provided for setting a drain current of a field-effect transistor.
    Type: Application
    Filed: October 23, 2018
    Publication date: September 24, 2020
    Inventors: Gregor Tretter, Reiner Schnitzer, Thomas Schwarzenberger