Abstract: An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

Abstract: An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

Abstract: An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

Abstract: A single-crystal, multi-layer device incorporating an IR absorbing layer that is compositionally different from the Ga.sub.x Al.sub.1-x Sb layer which acts as the electron emitter. Many different IR absorbing layers can be envisioned for use in this embodiment, limited only by the ability to grow quality material on a chosen substrate. A non-exclusive list of possible IR absorbing layers would include GaSb, InAs and InAs/Ga.sub.w In.sub.y Al.sub.1-y-w Sb superlattices. The absorption of the IR photon excites an electron into the conduction band of the IR absorber. An externally applied electric field then transports electrons from the conduction band of the absorber into the conduction band of the Ga.sub.x Al.sub.1-x Sb, from which they are ejected into vacuum. Because the band alignments of Ga.sub.x Al.sub.1-x Sb can be made the same as that of GaAs, emitting efficiencies comparable to GaAs photocathodes are obtainable.

Abstract: A process for fabricating sequential inductors and varactor diodes of a monolithic, high voltage, nonlinear, transmission line in GaAs is disclosed. An epitaxially grown laminate is produced by applying a low doped active n-type GaAs layer to an n-plus type GaAs substrate. A heavily doped p-type GaAs layer is applied to the active n-type layer and a heavily doped n-type GaAs layer is applied to the p-type layer. Ohmic contacts are applied to the heavily doped n-type layer where diodes are desired. Multiple layers are then either etched away or Oxygen ion implanted to isolate individual varactor diodes. An insulator is applied between the diodes and a conductive/inductive layer is thereafter applied on top of the insulator layer to complete the process.