Abstract: A cooking system positionable on a support surface includes a housing having an internal cooking compartment and an opening formed in the housing for accessing said internal cooking compartment. At least one heating element is provided for heating said internal cooking compartment. The heating element is operable to heat the internal cooking compartment while the opening is at least partially exposed to an ambient environment to allow fluid transfer between the ambient environment and the internal cooking compartment. An output from said at least one heating element is variable across said internal cooking compartment during operation of the system.

Abstract: A cooking system positionable on a support surface includes a housing having an internal cooking compartment and an opening formed in the housing for accessing said internal cooking compartment. At least one heating element is provided for heating said internal cooking compartment. The heating element is operable to heat the internal cooking compartment while the opening is at least partially exposed to an ambient environment to allow fluid transfer between the ambient environment and the internal cooking compartment. An output from said at least one heating element is variable across said internal cooking compartment during operation of the system.

Abstract: A cooking system positionable on a support surface includes a housing having an internal cooking compartment and an opening formed in said housing for accessing said internal cooking compartment. The housing is positionable about the support surface in both a first orientation and a second, distinct orientation. At least one heating element is associated with said internal cooking compartment. The at least one heating element is operable to heat said internal cooking compartment in both said first orientation and said second orientation.

Abstract: A cooking system for cooking food includes a housing defining a hollow chamber, a food container positionable in said hollow interior and defining a container interior, and at least one heating element positioned in said housing to heat said container interior. The food container includes a non-elliptical container shape and the housing includes a non-elliptical housing shape. The container interior is structured to tolerate a high pressure cooking environment.

Abstract: A cooking system positionable on a support surface includes a housing having an internal cooking compartment and an opening formed in said housing for accessing said internal cooking compartment. The housing is positionable about the support surface in both a first orientation and a second, distinct orientation. At least one heating element is associated with said internal cooking compartment. The at least one heating element is operable to heat said internal cooking compartment in both said first orientation and said second orientation.

Abstract: A cooking system positionable on a support surface includes a housing having an internal cooking compartment and an opening formed in the housing for accessing said internal cooking compartment. At least one heating element is provided for heating said internal cooking compartment. The heating element is operable to heat the internal cooking compartment while the opening is at least partially exposed to an ambient environment to allow fluid transfer between the ambient environment and the internal cooking compartment. An output from said at least one heating element is variable across said internal cooking compartment during operation of the system.

Abstract: Embodiments of the invention describe heterogeneous photonic integrated circuits (PIC) wherein a first silicon region is separated from the heterogeneous semiconductor material by a first distance, and a second silicon region is separated from the heterogeneous semiconductor material by a second distance greater than the first distance. Thus embodiments of the invention may be described as, in heterogeneous regions of a heterogeneous PIC, silicon waveguides using multiple heights of the silicon waveguide, or other structures with multiple offset heights between silicon and heterogeneous materials (as described herein).

Abstract: Embodiments of the invention relate to an electro-optic device comprising a first region of silicon semiconductor material and a second region of III-V semiconductor material. A waveguide of the optical device is formed in part by a ridge in the second region. An optical mode of the waveguide is laterally confined by the ridge of the second region and vertically confined by a vertical boundary included in the first region. The ridge structure further serves as a current confinement structure over the active region of the electro-optic device, eliminating the need for implantation or other structures that are known to present reliability problems during manufacturing. The lack of “voids” and implants in electro-optic devices according to embodiments of the invention leads to better device reliability, process repeatability and improved mechanical strength.

Abstract: Optical devices having a first semiconductor slab including a first lateral boundary for an optical mode and a second semiconductor slab above and asymmetrically overlapping the first lateral boundary included in the first semiconductor slab and including an edge of a second lateral boundary for the optical mode. The second lateral boundary is disposed above and to a side of the first lateral boundary. The first semiconductor slab is of a silicon material while the second semiconductor slab is of a III-V material. A first and a second electrical contact are coupled to the second semiconductor slab, one on each lateral side of the second lateral boundary. The optical device further includes an optical waveguide region formed by the first and second lateral optical mode boundaries, wherein a complex refractive index of the optical waveguide region changes based on an electrical difference applied between the first and second electrical contacts.

Abstract: An electro-optic modulator comprising a first region of silicon material and a second region of non-silicon material. The second region may at least partially overlap the first region to create a lateral overlap region. An optical waveguide of the modulator may be included in the lateral overlap region and comprise of both the silicon and the non-silicon material. The refractive index of at least one of the silicon material and the non-silicon material within the optical waveguide may change based on an electrical difference applied between electrical contacts of the modulator.

Abstract: Embodiments of the invention relate to an electro-optic device comprising a first region of silicon semiconductor material and a second region of III-V semiconductor material. A waveguide of the optical device is formed in part by a ridge in the second region. An optical mode of the waveguide is laterally confined by the ridge of the second region and vertically confined by a vertical boundary included in the first region. The ridge structure further serves as a current confinement structure over the active region of the electro-optic device, eliminating the need for implantation or other structures that are known to present reliability problems during manufacturing. The lack of “voids” and implants in electro-optic devices according to embodiments of the invention leads to better device reliability, process repeatability and improved mechanical strength.

Abstract: Embodiments of the invention relate to an electro-optic device comprising a first region of silicon semiconductor material and a second region of III-V semiconductor material. A waveguide of the optical device is formed in part by a ridge in the second region. An optical mode of the waveguide is laterally confined by the ridge of the second region and vertically confined by a vertical boundary included in the first region. The ridge structure further serves as a current confinement structure over the active region of the electro-optic device, eliminating the need for implantation or other structures that are known to present reliability problems during manufacturing. The lack of “voids” and implants in electro-optic devices according to embodiments of the invention leads to better device reliability, process repeatability and improved mechanical strength.

Abstract: Apparatuses and methods for making and using laser-assisted magnetic recording devices. A slider for use in a magnetic recording apparatus in accordance with one or more embodiments of the present invention comprises a magnetic recording element having a first pole and a second pole, a magnetic reader, and a laser resonator integrally formed on said slider, having an optical emission point of said resonator positioned between the first pole and the second pole of the magnetic recording element; wherein the laser resonator comprises a semiconductor gain media positioned between a first reflector and a near field optical element having a nonzero optical reflection to the semiconductor gain media.

Abstract: The present invention relates to the tailoring the reflectivity spectrum of a sampled-grating distributed Bragg reflector (SGDBR) by applying digital sampling theory to choose the way each reflector is sampled. The resulting mirror covers a larger wavelength span and has peaks with a larger, more uniform, coupling constant (?) than the mirrors produced using conventional approaches. The improved mirror also retains the benefits of the sample grating approach. Additionally, most of the embodiments are relatively simple to manufacture.

Abstract: A monolithically-integrated semiconductor optical transmitter that can index tune to any transmission wavelength in a given range, wherein the range is larger than that achievable by the maximum refractive index tuning allowed by the semiconductor material itself (i.e. ??/?>?n/n). In practice, this tuning range is >15 nm. The transmitter includes a Mach-Zehnder (MZ) modulator monolithically integrated with a widely tunable laser and a semiconductor optical amplifier (SOA). By using an interferometric modulation, the transmitter can dynamically control the chirp in the resulting modulated signal over the wide tuning range of the laser.

Abstract: A tunable laser source with integrated optical modulator. The tunable laser source is a widely tunable semiconductor laser that is comprised of an active region on top of a thick, low bandgap, waveguide layer, wherein both the waveguide layer and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator is integrated into the semiconductor laser, wherein the electro-absorption modulator shares the waveguide layer with the semiconductor laser.

Abstract: A tunable laser source with integrated optical modulator. The tunable laser source is a widely tunable semiconductor laser that is comprised of an active region on top of a thick, low bandgap, waveguide layer, wherein both the waveguide layer and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator is integrated into the semiconductor laser, wherein the electro-absorption modulator shares the waveguide layer with the semiconductor laser.

Abstract: A tunable laser source (10) with an integrated optical modulator (20). The laser source (10) is a widely tunable semiconductor laser that is comprised of an active region on top of a thick low bandgap, waveguide layer (22), wherein both the waveguide layer (220) and the active region are fabricated between a p-doped region and an n-doped region. An electro-absorption modulator (20) is integrated into the semiconductor laser (10), wherein the electro-absorption modulator (20) shares the waveguide layer (22) with the semiconductor laser.

Abstract: A semiconductor tunable laser (10) and an interferometer (12) coupled to the tunable laser (10) are monolithically fabricated in a semiconductor heterostructure. The laser also comprises a buried ridge stripe waveguide laser. The interferometer (12) has a semiconductor optical amplifier (38) coupled in each arm. A cross-gain semiconductor optical amplifier converter is coupled to the interferometer (12). The semiconductor optical amplifier (38) coupled in each arm is biased so that an optical path length difference between the two arms is in antiphase which results in destructive interference. The output of the tunable laser (10) is coupled to a coupler. A semiconductor optical amplifier (38) is used as a gain controller for the semiconductor optical amplifiers in the interferometer (12) to allow wavelength conversion over a larger range of input signal powers.

Abstract: The present invention relates to the tailoring the reflectivity spectrum of a sampled-grating distributed Bragg reflector (SGDBR) by applying digital sampling theory to choose the way each reflector is sampled. The resulting mirror covers a larger wavelength span and has peaks with a larger, more uniform, coupling constant (?) than the mirrors produced using conventional approaches. The improved mirror also retains the benefits of the sample grating approach. Additionally, most of the embodiments are relatively simple to manufacture.