Abstract: Methods, systems, and devices for bypass interconnections for stacked semiconductor systems are described. An interface between a logic component and a system substrate of a semiconductor system may extend beyond an active area of a memory stack and couple between the logic component and the system substrate via one or more bypass regions. In some examples, through-silicon vias may be formed through portions of a memory stack, such as a semiconductor extension at edges of each memory die, which may be used for transfer of high-speed or high-energy signals. Additionally, or alternatively, a logic component may be placed on top of a stack of memory dies with separate bypass components along one or more sides adjacent to a memory stack, through which bypass interconnects may be formed, allowing for different configurations and avoiding the use of memory component silicon being allocated for such interconnections.

Abstract: Methods, systems, and devices for power and signal distribution in stacked semiconductor systems are described. A semiconductor system may include a distribution component configured to communicate power, signals, or both with a logic component and memory component(s) of the semiconductor system. The distribution component may include power delivery circuitry to provide separate power to the memory component(s) and the logic component, data serialization/deserialization circuitry to communicate data signals with the logic component, or both. The distribution component may convey power, data signals, or both to the logic component using conductive vias that pass through the memory components and bypass interface circuitry of the memory component(s).

Abstract: Methods, systems, and devices for interface techniques for stacked memory architectures are described. A semiconductor system, such as a memory system, may distribute memory access circuitry among multiple semiconductor dies of a stack. A first die of the system may include logic circuitry operable to configure a set of multiple first interface blocks of the first die. Each first interface block may include circuitry operable to communicate with one or more second interface blocks of one or more second dies of the system to access a respective set of one or more memory arrays of the one or more second dies. In some examples, the system may include a respective controller for each first interface block to support access operations via the first interface block. The system may also include non-volatile storage, one or more sensors, or a combination thereof to support various operations of the system.

Abstract: Input/output (I/O) components can include electromechanical switches that can be placed respectively on signal lines coupled between transceivers and I/O pads. Electromechanical switches can operate to isolate respective transceivers from the other transceivers and/or I/O pads to protect those transceivers from ESD events. Electromechanical switches of I/O components can be micro-electromechanical systems (MEMS) switches.

Abstract: An interface, such as an input/output expander (IOE), includes microelectromechanical (MEMS) switches that are operable to connect or disconnect respective signal lines on the interface. MEMS switches may be less susceptible to electrostatic discharge (ESD) damages, which eliminates a need for ESD protection circuits for each MEMS switch. The interface can have improved performance due to the eliminated need for the ESD protection circuits, which otherwise may have introduced jitter in signal propagation.

Abstract: Methods, systems, and devices for interface techniques for stacked memory architectures are described. A semiconductor system, such as a memory system, may distribute memory access circuitry among multiple semiconductor dies of a stack. A first die of the system may include logic circuitry operable to configure a set of multiple first interface blocks of the first die. Each first interface block may include circuitry operable to communicate with one or more second interface blocks of one or more second dies of the system to access a respective set of one or more memory arrays of the one or more second dies. In some examples, the system may include a respective controller for each first interface block to support access operations via the first interface block. The system may also include non-volatile storage, one or more sensors, or a combination thereof to support various operations of the system.

Abstract: An apparatus includes a first voltage domain including a first circuit configured to operate at a first supply voltage, a second voltage domain including second circuit configured to operate at a second supply voltage, and a drain-ballasted electrostatic discharge (ESD) protection circuit configured to electrically couple the first voltage domain and the second voltage domain, the drain-ballasted ESD protection circuit including a first NMOS transistor, a second NMOS transistor, a floating interconnect that electrically couples the first NMOS transistor to the second NMOS transistor, and a grounding resistor coupled to the first NMOS transistor and the second NMOS transistor.

Abstract: Systems, apparatuses, and methods for operating a memory device or devices are described. A memory device or module may introduce latency in commands to coordinate operations at the device or to improve timing or power consumption at the device. For example, a host may issue a command to a memory module, and a component or feature of the memory module may receive the command and modify the command or the timing of its execution in manner that is invisible or non-disruptive to the host while facilitating operations at the memory module. In some examples, components or features of a memory module may be disabled to effect or introduce latency in operation without affecting timing or operation of a host device. A memory module may operate in different modes that allow for different latencies; the use or introduction of latencies may not affect other features or operability of the memory module.

Abstract: An apparatus is provided, comprising a plurality of memory devices and a buffering device that permits memory devices with a variety of physical dimensions and memory formats to be used in an industry-standard memory module format. The buffering device includes memory interface circuitry and at least one first-in first-out (FIFO) or multiplexer circuit. The apparatus further comprises a parallel bus connecting the buffering device to the plurality of memory devices. The parallel bus includes a plurality of independent control lines, each coupling the memory interface circuitry to a corresponding subset of a plurality of first subsets of the plurality of memory devices. The parallel bus further includes a plurality of independent data channels, each coupling the at least one FIFO circuit or multiplexer circuit to a corresponding subset of a plurality of second subsets of the plurality of memory devices.

Abstract: An apparatus is provided, comprising a plurality of memory devices and a buffering device that permits memory devices with a variety of physical dimensions and memory formats to be used in an industry-standard memory module format. The buffering device includes memory interface circuitry and at least one first-in first-out (FIFO) or multiplexer circuit. The apparatus further comprises a parallel bus connecting the buffering device to the plurality of memory devices. The parallel bus includes a plurality of independent control lines, each coupling the memory interface circuitry to a corresponding subset of a plurality of first subsets of the plurality of memory devices. The parallel bus further includes a plurality of independent data channels, each coupling the at least one FIFO circuit or multiplexer circuit to a corresponding subset of a plurality of second subsets of the plurality of memory devices.

Abstract: Systems, apparatuses, and methods relating to memory devices and packaging are described. A device, such as a dual inline memory module (DIMM) or other electronic device package, may include a substrate with a layer of graphene configured to conduct thermal energy (e.g., heat) away from components mounted or affixed to the substrate. In some examples, a DIMM includes an uppermost or top layer of graphene that is exposed to the air and configured to allow connection of memory devices (e.g., DRAMs) to be soldered to the conducting pads of the substrate. The graphene may be in contact with parts of the memory device other than the electrical connections with the conducting pads and may thus be configured as a heat sink for the device. Other thin, conductive layers of may be used in addition to or as an alternative to graphene. Graphene may be complementary to other heat sink mechanisms.

Abstract: Systems, apparatuses, and methods for operating a memory device or devices are described. A memory device or module may introduce latency in commands to coordinate operations at the device or to improve timing or power consumption at the device. For example, a host may issue a command to a memory module, and a component or feature of the memory module may receive the command and modify the command or the timing of its execution in manner that is invisible or non-disruptive to the host while facilitating operations at the memory module. In some examples, components or features of a memory module may be disabled to effect or introduce latency in operation without affecting timing or operation of a host device. A memory module may operate in different modes that allow for different latencies; the use or introduction of latencies may not affect other features or operability of the memory module.

Abstract: Systems, apparatuses, and methods for thermal dissipation on or from an electronic device are described. An apparatus may have a printed circuit board (PCB) having an edge connector. At least one integrated circuit device may be disposed on a surface of the PCB. A tubular heat spreader may be disposed along an edge of the PCB opposite the edge connector.

Abstract: Systems, apparatuses, and methods for operating a memory device or devices are described. A memory device or module may introduce latency in commands to coordinate operations at the device or to improve timing or power consumption at the device. For example, a host may issue a command to a memory module, and a component or feature of the memory module may receive the command and modify the command or the timing of its execution in manner that is invisible or non-disruptive to the host while facilitating operations at the memory module. In some examples, components or features of a memory module may be disabled to effect or introduce latency in operation without affecting timing or operation of a host device. A memory module may operate in different modes that allow for different latencies; the use or introduction of latencies may not affect other features or operability of the memory module.

Abstract: An apparatus is provided, comprising a plurality of memory devices and a buffering device that permits memory devices with a variety of physical dimensions and memory formats to be used in an industry-standard memory module format. The buffering device includes memory interface circuitry and at least one first-in first-out (FIFO) or multiplexer circuit. The apparatus further comprises a parallel bus connecting the buffering device to the plurality of memory devices. The parallel bus includes a plurality of independent control lines, each coupling the memory interface circuitry to a corresponding subset of a plurality of first subsets of the plurality of memory devices. The parallel bus further includes a plurality of independent data channels, each coupling the at least one FIFO circuit or multiplexer circuit to a corresponding subset of a plurality of second subsets of the plurality of memory devices.

Abstract: An apparatus is provided, comprising a plurality of memory devices and a buffering device that permits memory devices with a variety of physical dimensions and memory formats to be used in an industry-standard memory module format. The buffering device includes memory interface circuitry and at least one first-in first-out (FIFO) or multiplexer circuit. The apparatus further comprises a parallel bus connecting the buffering device to the plurality of memory devices. The parallel bus includes a plurality of independent control lines, each coupling the memory interface circuitry to a corresponding subset of a plurality of first subsets of the plurality of memory devices. The parallel bus further includes a plurality of independent data channels, each coupling the at least one FIFO circuit or multiplexer circuit to a corresponding subset of a plurality of second subsets of the plurality of memory devices.

Abstract: Systems, apparatuses, and methods for thermal dissipation on or from an electronic device are described. An apparatus may have a printed circuit board (PCB) having an edge connector. At least one integrated circuit device may be disposed on a surface of the PCB. A tubular heat spreader may be disposed along an edge of the PCB opposite the edge connector.

Abstract: Systems, apparatuses, and methods for thermal dissipation on or from an electronic device are described. For example, a memory module may have a printed circuit board (PCB) having an edge connector, a plurality of memory devices disposed on a surface of the PCB, and a tubular heat spreader disposed along an edge of the PCB opposite the edge connector. The tubular heat spreader may comprise a tubular portion open at both ends thereof to permit the through flow of a cooling gas; and two planar elements extending in parallel away from the tubular portion and configured to provide a friction fit with the memory module. Each of the planar elements may be configured to convey thermal energy from the memory module to the tubular portion.

Abstract: Systems, apparatuses, and methods relating to memory devices and packaging are described. A device, such as a dual inline memory module (DIMM) or other electronic device package, may include a substrate with a layer of graphene configured to conduct thermal energy (e.g., heat) away from components mounted or affixed to the substrate. In some examples, a DIMM includes an uppermost or top layer of graphene that is exposed to the air and configured to allow connection of memory devices (e.g., DRAMs) to be soldered to the conducting pads of the substrate. The graphene may be in contact with parts of the memory device other than the electrical connections with the conducting pads and may thus be configured as a heat sink for the device. Other thin, conductive layers of may be used in addition to or as an alternative to graphene. Graphene may be complementary to other heat sink mechanisms.

Abstract: Systems, apparatuses, and methods relating to memory devices and packaging are described. A device, such as a dual inline memory module (DIMM) or other electronic device package, may include a substrate with a layer of graphene configured to conduct thermal energy (e.g., heat) away from components mounted or affixed to the substrate. In some examples, a DIMM includes an uppermost or top layer of graphene that is exposed to the air and configured to allow connection of memory devices (e.g., DRAMs) to be soldered to the conducting pads of the substrate. The graphene may be in contact with parts of the memory device other than the electrical connections with the conducting pads and may thus be configured as a heat sink for the device. Other thin, conductive layers of may be used in addition to or as an alternative to graphene. Graphene may be complementary to other heat sink mechanisms.