Patents by Inventor Gregory Alan Garrett

Gregory Alan Garrett has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190287304
    Abstract: A method and system for safety enhancement. A movement of a user of a mobile display system that displays augmented reality information is measured. Movement information about the user is relayed from the movement measured for the user. A speed at which the user is moving with respect to a structure using the movement information and a three-dimensional model of the structure is determined. A visual display of the augmented reality information on the mobile display system is deactivated when the speed at which the user is moving with respect to the structure meets a deactivation condition.
    Type: Application
    Filed: March 13, 2018
    Publication date: September 19, 2019
    Inventors: Paul Robert Davies, Brian Dale Laughlin, Alexandra Marie White, Gregory Alan Garrett
  • Patent number: 8564014
    Abstract: An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
    Type: Grant
    Filed: July 12, 2010
    Date of Patent: October 22, 2013
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Anand Venktesh Sampath, Charles J. Collins, Gregory Alan Garrett, H. Paul Shen, Michael Wraback
  • Publication number: 20100276710
    Abstract: An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
    Type: Application
    Filed: July 12, 2010
    Publication date: November 4, 2010
    Applicant: UNITED STATES GOVERNMENT AS REPRESENTED BY THE SECRETARY OF THE ARMY
    Inventors: Anand Venktesh Sampath, Charles J. Collins, Gregory Alan Garrett, H. Paul Shen, Michael Wraback
  • Patent number: 7812366
    Abstract: An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: October 12, 2010
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Anand Venktesh Sampath, Charles J. Collins, Gregory Alan Garrett, H. Paul Shen, Michael Wraback
  • Patent number: 7498182
    Abstract: An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: March 3, 2009
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Anand Venktesh Sampath, Charles J. Collins, Gregory Alan Garrett, Paul Hongen Shen, Michael Wraback