Abstract: In an embodiment a method includes providing a carrier with an optoelectronic semiconductor chip-component arranged on a top side of the carrier, arranging a first potting material on the top side of the carrier, arranging a second potting material on the first potting material, wherein the second potting material comprises a higher density than the first potting material, wherein a top side of the optoelectronic semiconductor chip-component is covered by neither the first potting material nor the second potting material and allowing a force to act on the first potting material and the second potting material such that the second potting material migrates in a direction toward the top side of the carrier.

Abstract: In an embodiment a method for producing a semiconductor device includes providing a carrier with a semiconductor component arranged on the carrier, providing a layer arrangement on the carrier, the layer arrangement adjoining the semiconductor component and comprising a first and a second flowable layer, wherein the first layer is formed on the carrier and then the second layer is formed on the first layer, wherein the first layer comprises particles, wherein a density of the first layer is greater than a density of the second layer, and wherein a lateral wetting of the semiconductor component with the first layer occurs such that the first layer comprises a first configuration comprising a curved layer surface laterally with respect to the semiconductor component, and centrifuging the carrier such that the first layer comprises a second configuration as a result, wherein the first layer cannot return to the first configuration since the second layer is arranged on the first layer.

Abstract: In an embodiment a method includes providing a carrier with an optoelectronic semiconductor chip-component arranged on a top side of the carrier, arranging a first potting material on the top side of the carrier, arranging a second potting material on the first potting material, wherein the second potting material comprises a higher density than the first potting material, wherein a top side of the optoelectronic semiconductor chip-component is covered by neither the first potting material nor the second potting material and allowing a force to act on the first potting material and the second potting material such that the second potting material migrates in a direction toward the top side of the carrier.

Abstract: In an embodiment a method for producing a semiconductor device includes providing a carrier with a semiconductor component arranged on the carrier, providing a layer arrangement on the carrier, the layer arrangement adjoining the semiconductor component and comprising a first and a second flowable layer, wherein the first layer is formed on the carrier and then the second layer is formed on the first layer, wherein the first layer comprises particles, wherein a density of the first layer is greater than a density of the second layer, and wherein a lateral wetting of the semiconductor component with the first layer occurs such that the first layer comprises a first configuration comprising a curved layer surface laterally with respect to the semiconductor component, and centrifuging the carrier such that the first layer comprises a second configuration as a result, wherein the first layer cannot return to the first configuration since the second layer is arranged on the first layer.

Abstract: An electrical connection arrangement between a semiconductor circuit arrangement and an external contact device, and to a method for producing the connection arrangement is disclosed. In one embodiment, a metallic layer is deposited onto at least one contact terminal and/or the contacts and the wire, the metallic layer protecting the contact terminal or the electrical connection against ambient influences and ensuring a high reliability.

Abstract: An electrical connection arrangement between a semiconductor circuit arrangement and an external contact device, and to a method for producing the connection arrangement is disclosed. In one embodiment, a metallic layer is deposited onto at least one contact terminal and/or the contacts and the wire, the metallic layer protecting the contact terminal or the electrical connection against ambient influences and ensuring a high reliability.

Abstract: An electrical connection arrangement between a semiconductor circuit arrangement and an external contact device, and to a method for producing the connection arrangement is disclosed. In one embodiment, a metallic layer is deposited onto at least one contact terminal and/or the contacts and the wire, the metallic layer protecting the contact terminal or the electrical connection against ambient influences and ensuring a high reliability.

Abstract: An electrical connection arrangement between a semiconductor circuit arrangement and an external contact device, and to a method for producing the connection arrangement is disclosed. In one embodiment, a metallic layer is deposited onto at least one contact terminal and/or the contacts and the wire, the metallic layer protecting the contact terminal or the electrical connection against ambient influences and ensuring a high reliability.