Abstract: Removing a stimuli responsive polymer (SRP) from a substrate includes controlled degradation. In certain embodiments of the methods described herein, removing SRPs includes exposure to two reactants that react to form an acid or base that can trigger the degradation of the SRP. The exposure occurs sequentially to provide more precise top down control. In some embodiments, the methods involve diffusing a compound, or a reactant that reacts to form a compound, only to a top portion of the SRP. The top portion is then degraded and removed, leaving film the remaining SRP intact. The exposure and removal cycles are repeated.

Abstract: The present disclosure relates to a stimulus responsive polymer (SRP) that includes a homopolymer. Methods, films, and formulations employing an SRP are also described herein.

Abstract: Removing stimulus responsive polymers (SRPs) includes exposure to high energy metastable species, generated in a noble gas plasma, at an elevated temperature. The metastable species have sufficient energies and lifetimes to scission bonds on the polymer or other residues. At temperatures greater than the ceiling temperature of the SRP, there is a strong thermodynamic driving force to revert to volatile monomers once bond scissioning has occurred. The metastable species are not chemically reactive and do not appreciably affect the underlying surface. The high energy metastable species are effective at removing residues that remain after exposure to other stimuli such as heat.

Abstract: A method includes performing a first substrate treatment on a substrate using a first dry process in a first substrate processing tool operating at vacuum; after the first substrate treatment, depositing a polymer film on an exposed surface of the substrate using a chemical vapor deposition (CVD) process in the first substrate processing tool; removing the substrate from the first substrate processing tool for a queue period; after the queue period, removing the polymer film from the substrate; and performing a second substrate treatment on the substrate using a second dry process in a second substrate processing tool.

Abstract: Removing a stimuli responsive polymer (SRP) from a substrate includes controlled degradation. In certain embodiments of the methods described herein, removing SRPs includes exposure to two reactants that react to form an acid or base that can trigger the degradation of the SRP. The exposure occurs sequentially to provide more precise top down control. In some embodiments, the methods involve diffusing a compound, or a reactant that reacts to form a compound, only to a top portion of the SRP. The top portion is then degraded and removed, leaving the remaining SRP intact. The exposure and removal cycles are repeated.

Abstract: The present disclosure relates to methods of forming a film including small molecules. Such methods can optionally include removing such small molecules, such as by way of sublimation, evaporation, or conversion to a more volatile form.

Abstract: Formulations for forming stimulus responsive polymers (SRPs) on semiconductor substrates include organic weak acids. Methods of protecting sensitive substrates including forming an SRP layer on sensitive substrates and forming one or more cap layers on the SRP layer.

Abstract: A method for patterning a substrate includes providing a substrate, and depositing a multi-layer stack including N layers on the substrate. N is an integer greater than one. The N layers include N mean free paths for secondary electrons, respectively. The method includes depositing a photoresist layer on the multi-layer stack, wherein the N mean free paths converge in the photoresist layer. Another method for patterning a substrate includes providing a substrate and depositing a layer on the substrate. The layer includes varying mean free paths for secondary electrons. The method includes depositing a photoresist layer on the layer. The varying mean free paths for secondary electrons converge in the photoresist layer.

Abstract: A method for cleaning a substrate includes supplying a vapor to a processing chamber to grow a polymer film on a substrate in the processing chamber; adding a solution to the polymer film on the substrate to create a viscoelastic fluid on the substrate; and removing the viscoelastic fluid to remove particle contaminants from the substrate.

Abstract: A method comprises forming a first structured pattern having a first line width on a substrate. A polymer brush is deposited on the structured pattern, which is annealed a first time at a first temperature and then annealed a second time at a second temperature higher than the first temperature. A block copolymer is deposited on the structured pattern and polymer brush, and aligned first block and second block structures are formed on the structured pattern and polymer brush. The first block structures and portions of the polymer brush and the structured pattern positioned beneath the first block structures are removed, and the substrate between the second block structures is exposed. The second block structures are then removed to form a second structured pattern in the substrate having a second line width, the second line width being smaller than the first line width.

Abstract: The present invention relates to a method for the synthesis and utilization of block copolymer can that form sub-10 nm lamella nanostructures. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.

Abstract: A method for cleaning a substrate includes supplying a vapor to a processing chamber to grow a polymer film on a substrate in the processing chamber; adding a solution to the polymer film on the substrate to create a viscoelastic fluid on the substrate; and removing the viscoelastic fluid to remove particle contaminants from the substrate.

Abstract: The present invention relates to a method for the synthesis and utilization of block copolymer can that form sub-10 nm lamella nanostructures. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.