Abstract: A half bridge comprising: a high side (HS) transistor; a low side (LS) transistor connected in series with the high side transistor at an output node of the half bridge; and a third quadrant state (TQS) detector connected in parallel with the HS or LS transistor and in series respectively with the LS and/or HS transistor, which TQS detector generates a signal responsive to a direction of a voltage drop across the transistor that is in parallel with the TQS detector.

Abstract: A half bridge comprising: a high side (HS) transistor; a low side (LS) transistor connected in series with the high side transistor at an output node of the half bridge; and a third quadrant state (TQS) detector connected in parallel with the HS or LS transistor and in series respectively with the LS and/or HS transistor, which TQS detector generates a signal responsive to a direction of a voltage drop across the transistor that is in parallel with the TQS detector.

Abstract: An electrical power switch, the power switch comprising: an array of rows and columns of lateral field effect (LFET) transistors, each transistor having a source, drain, and gate; a plurality of internal interconnect layers comprising metallizations configured to connect the transistors to operate in parallel; a source electrode and a drain electrode for respectively connecting the sources and drains of the transistors to an external circuit; and a bridging interconnect layer comprising: a plurality of undulating source bridging conductors that provide electrical connections for the sources of the transistors to the source electrode; and a plurality of undulating drain bridging conductors that provide electrical connections for the drains of the transistors to the drain electrode.

Abstract: A vehicle seat connector assembly comprising a first connector coupled to the seat of the vehicle and including a first inductive coil. A second connector is coupled to the vehicle and includes a second inductive coil. The first and second connectors are positioned relative to each other into a first relationship with the first and second connectors coupled to each other and the first and second inductive coils positioned opposite each other to define a closed inductive coil circuit and a second relationship with the first and second connectors and the first and second inductive coils separated from each other to define an open inductive coil circuit. A third inductive coil is located on the vehicle seat belt buckle and a coil cable extends between the first inductive coil of the first connector and the third inductive coil.

Abstract: A field effect transistor (FET) includes a plurality of substantially parallel conductive channels and at least one electrically conducting plug to travers and form an ohmic connection with at least two of the plurality of conductive channels.

Abstract: A vehicle seat connector assembly comprising a first connector coupled to the seat of the vehicle and including a first inductive coil. A second connector is coupled to the vehicle and includes a second inductive coil. The first and second connectors are positioned relative to each other into a first relationship with the first and second connectors coupled to each other and the first and second inductive coils positioned opposite each other to define a closed inductive coil circuit and a second relationship with the first and second connectors and the first and second inductive coils separated from each other to define an open inductive coil circuit. A third inductive coil is located on the vehicle seat belt buckle and a coil cable extends between the first inductive coil of the first connector and the third inductive coil.

Abstract: A switch assembly for a vehicle seat belt buckle comprising a switch housing defining an interior and a pocket, a cable extending into the interior and including hook-shaped ends extending around posts in the interior of the switch housing. In one embodiment, the interior of the switch housing includes first and second posts positioned in a co-linear and spaced apart relationship and the hook-shaped ends face each other and extend around the first posts and abut against the second posts. In one embodiment, the Hall Effect sensor is positioned in the pocket of the switch housing in an inclined relationship.

Abstract: A GaN field effect transistor (FET) including a plurality of transistor cells. A gate metal layer of a transistor cell includes a gate-drain overhang (width 0.2 um to 2.5 um) and a gate-source overhang (width 0.3 um to 1 um), and a widening at each narrow edge of the transistor cell, wherein the width of the widening of gate metal layer (150) is of 2-5 um. A metal (1) layer of the transistor sell extends beyond metal (0) layer. A last metal layer includes a drain plate and a source plate, each having a trapezoid form. More than two vias are located at a widening for connecting the gate metal layer to the gate bus. More than six vias distributed along the longitudinal dimension of the transistor cell connect metal (1) layer to metal (0) layer. A plurality of type 2 vias connect metal (1) layer to the last metal layer.

Abstract: A switch assembly for a vehicle seat belt buckle comprising a switch housing defining an interior and a pocket, a cable extending into the interior and including hook-shaped ends extending around posts in the interior of the switch housing. In one embodiment, the interior of the switch housing includes first and second posts positioned in a co-linear and spaced apart relationship and the hook-shaped ends face each other and extend around the first posts and abut against the second posts. In one embodiment, the Hall Effect sensor is positioned in the pocket of the switch housing in an inclined relationship.

Abstract: A switch assembly for a vehicle seat belt buckle comprising a switch housing defining an interior and a pocket, a cable extending into the interior and including hook-shaped ends extending around posts in the interior of the switch housing. In one embodiment, the interior of the switch housing includes first and second posts positioned in a co-linear and spaced apart relationship and the hook-shaped ends face each other and extend around the first posts and abut against the second posts. In one embodiment, the Hall Effect sensor is positioned in the pocket of the switch housing in an inclined relationship.

Abstract: A switching power device (100) is provided which comprises: a normally-ON transistor (12), a normally-OFF metal-oxide-semiconductor field-effect transistor (MOSFET) (14), the normally-OFF MOSFET (14) being connected in series to a source terminal (12S) of the normally-ON transistor (12), and a driver (16) connected to and arranged to drive a gate terminal (12G) of the normally-ON transistor (12). A switching transistor (28) can then be positioned between the source terminal (12S) of the normally-ON transistor (12) and a common connection (30) of the driver (16) to protect the switching power device (100) from deleterious over-voltage and over-current spikes.

Abstract: A GaN field effect transistor (FET) including a plurality of transistor cells. A gate metal layer of a transistor cell includes a gate-drain overhang (width 0.2 um to 2.5 um) and a gate-source overhang (width 0.3 um to 1 um), and a widening at each narrow edge of the transistor cell, wherein the width of the widening of gate metal layer (150) is of 2-5 um. A metal (1) layer of the transistor sell extends beyond metal (0) layer. A last metal layer includes a drain plate and a source plate, each having a trapezoid form. More than two vias are located at a widening for connecting the gate metal layer to the gate bus. More than six vias distributed along the longitudinal dimension of the transistor cell connect metal (1) layer to metal (0) layer. A plurality of type 2 vias connect metal (1) layer to the last metal layer.

Abstract: An apparatus includes a circuitry to perform a high current and/or a high voltage switching. The circuitry includes a first Gallium Nitride (GaN) on a silicon (Si) substrate lateral field effect transistor. A source terminal of the first GaN lateral field effect transistor on the Si substrate includes an electrical connection to backside of P-type Si substrate through a high voltage isolated resistor that is coupled to a source terminal or a second resistor that is operably coupled to a drain terminal and a substrate terminal. The high voltage isolated resistor and the second resistor cause to a leakage current from the drain terminal to the source terminal via a buffer layer. The leakage current equalizes the voltage drop on the first GaN lateral field effect transistor on the Si substrate to a voltage drop on a serially connected second GaN lateral field effect transistor on the Si substrate.

Abstract: A switch assembly for a vehicle seat belt buckle comprising a switch housing defining an interior and a pocket, a cable extending into the interior and including hook-shaped ends extending around posts in the interior of the switch housing. In one embodiment, the interior of the switch housing includes first and second posts positioned in a co-linear and spaced apart relationship and the hook-shaped ends face each other and extend around the first posts and abut against the second posts. In one embodiment, the Hall Effect sensor is positioned in the pocket of the switch housing in an inclined relationship.

Abstract: A switching power device (100) is provided which comprises: a normally-ON transistor (12), a normally-OFF metal-oxide-semiconductor field-effect transistor (MOSFET) (14), the normally-OFF MOSFET (14) being connected in series to a source terminal (12S) of the normally-ON transistor (12), and a driver (16) connected to and arranged to drive a gate terminal (12G) of the normally-ON transistor (12). A switching transistor (28) can then be positioned between the source terminal (12S) of the normally-ON transistor (12) and a common connection (30) of the driver (16) to protect the switching power device (100) from deleterious over-voltage and over-current spikes.

Abstract: An apparatus includes a circuitry to perform a high current and/or a high voltage switching. The circuitry includes a first Gallium Nitride (GaN) on a silicon (Si) substrate lateral field effect transistor. A source terminal of the first GaN lateral field effect transistor on the Si substrate includes an electrical connection to backside of P-type Si substrate through a high voltage isolated resistor that is coupled to a source terminal or a second resistor that is operably coupled to a drain terminal and a substrate terminal. The high voltage isolated resistor and the second resistor cause to a leakage current from the drain terminal to the source terminal via a buffer layer. The leakage current equalizes the voltage drop on the first GaN lateral field effect transistor on the Si substrate to a voltage drop on a serially connected second GaN lateral field effect transistor on the Si substrate.

Abstract: A device for providing high DC voltage using a solid state normally open switch. The solid state switch is controlled to gradually rise the voltage of the DC output by applying ON/OFF modulation scheme. The modulation scheme opens the switch initially for a very short time duration around the zero crossing of the input AC voltage and gradually the duration of the ON state extends until the switch remains constantly open.

Abstract: Super miniature TFF and TFP active modular optoelectronic components are based on an optical interface that is three times less than the size of SFF/SFP components and about six times smaller than an SC based component and thus provides a density that is three times higher than LC interfaces. The invention provides substantially smaller photonic devices that can be used with substantially smaller optoelectronic components and combines the new optoelectronic components with the new smaller miniature interconnect systems such as the Push-Release type using the same interface. The new interface can be used with sub-millimeter or larger diameter ferrules. Photonic devices are mounted in a close proximity of the active end of a fiber stub thereby avoiding the need for lenses and active alignment and enabling use in active hermetic or non-hermetic subassemblies.

Abstract: A field effect transistor (FET) comprises a plurality of substantially parallel conductive channels (252, 254) and at least one electrically conducting plug (209) that traverses and forms an ohmic connection with at least two of the plurality of conductive channels.

Abstract: A normally OFF field effect transistor (FET) comprising: a plurality of contiguous nitride semiconductor layers having different composition and heterojunction interfaces between contiguous layers, a Fermi level, and conduction and valence energy bands; a source and a drain overlying a top nitride layer of the plurality of nitride layers and having source and drain access regions respectively comprising regions of at least two of the heterojunctions near the source and drain; a first gate between the source and drain; wherein when there is no potential difference between the gates and a common ground voltage, a two dimensional electron gas (2DEG) is present in the access region at a plurality of heterojunctions in each of the source and drain access regions, and substantially no 2DEG is present adjacent any regions of the heterojunctions under the first gate.