Abstract: A memory device comprising a memory array comprising a plurality of memory cells and a metal silicide layer, wherein a memory cell is coupled between a first access line and a second access line and comprises an electrode coupling a storage element to the first access line, wherein the metal silicide layer is between the electrode and the first access line.

Abstract: A memory device comprising a three dimensional crosspoint memory array comprising a plurality of memory cells, wherein a memory cell is coupled between a first access line and a second access line and comprises an electrode coupled to a storage element, wherein the electrode comprises silicon carbide (SixCy).

Abstract: An apparatus comprising a substrate; and an interconnect comprising a first metal layer between and in contact with a second metal layer and a third metal layer, wherein the first metal layer has a resistivity that is lower than a resistivity of the second metal layer and a resistivity of the third metal layer.

Abstract: Semiconductor device interconnect structures comprising nitrided barriers are disclosed herein. In one embodiment, an interconnect structure includes a conductive material at least partially filling an opening in a semiconductor substrate, and a nitrided barrier between the conductive material and a sidewall in the opening. The nitrided barrier comprises a nitride material and a barrier material, such as tantalum, between the nitride material and the sidewall of the substrate.

Abstract: Semiconductor device interconnect structures comprising nitrided barriers are disclosed herein. In one embodiment, an interconnect structure includes a conductive material at least partially filling an opening in a semiconductor substrate, and a nitrided barrier between the conductive material and a sidewall in the opening. The nitrided barrier comprises a nitride material and a barrier material, such as tantalum, between the nitride material and the sidewall of the substrate.

Abstract: The present invention relates to a gettering material that may be used as a filtration medium to remove pollutants from the environment. The gettering material comprises a high surface area material having a metal surface that chemically bonds n-alkanethiols in an organized manner thereby forming a molecular monolayer over the metal surface. The n-alkanethiols have a free functional group that interacts with the environment thereby binding specific pollutants that may be present. The gettering material may be exposed to streams of air in heating, ventilation, and air conditioning systems or streams of water to remove specific pollutants from either medium.