Abstract: An apparatus for use in a chemical mechanical planarization (CMP) system is provided. The apparatus includes a platen capable of introducing fluid beneath a polishing pad and a platen support cover configured to surround the platen. The platen is disposed at a first level and the platen support cover is disposed at a second level, the first level being lower relative to the second level. Both the platen and the platen support cover are configured to be disposed below the polishing pad such that the polishing pad is closer to the second level than the first level. The platen support cover has a width at the second level that is substantially equal around the platen. An apparatus and method for controlling pressure beneath a polishing pad is also provided.

Abstract: A method for processing a wafer using a chemical mechanical planarization (CMP) apparatus is provided. The method includes providing a wafer to be processed and heating a slurry to be applied to a polishing pad of the CMP apparatus. The method further includes applying the heated slurry to the polishing pad, and polishing the wafer using the heated slurry. The method also includes stopping the heating of the slurry for a subsequent wafer to be processed.

Abstract: A composite polishing pad for use in a linear chemical-mechanical polishing apparatus is provided. The pad comprises a hard polishing pad having a polishing surface and an attachment surface opposite the polishing surface, the attachment surface comprising a border comprising an adhesive, the border surrounding a cavity, the cavity being sized and shaped to receive a soft polishing pad. The soft polishing pad is disposed completely in the cavity and completely fills the cavity, and the soft polishing pad has a first side adhered in the cavity of the hard polishing pad, and a second side comprising an adhesive, whereby the attachment surface of the hard polishing pad and the second side of the soft polishing pad are substantially in a common plane. Other composite polishing pads are also provided, as are methods for making composite pads and methods for preventing composite pads from splitting apart into their component pads.

Abstract: A composite polishing pad for use in a linear chemical-mechanical polishing apparatus is provided. The pad comprises a hard polishing pad having a polishing surface and an attachment surface opposite the polishing surface, the attachment surface comprising a border comprising an adhesive, the border surrounding a cavity, the cavity being sized and shaped to receive a soft polishing pad. The soft polishing pad is disposed completely in the cavity and completely fills the cavity, and the soft polishing pad has a first side adhered in the cavity of the hard polishing pad, and a second side comprising an adhesive, whereby the attachment surface of the hard polishing pad and the second side of the soft polishing pad are substantially in a common plane. Other composite polishing pads are also provided, as are methods for making composite pads and methods for preventing composite pads from splitting apart into their component pads.

Abstract: A conditioner assembly and a conditioner back support for conditioning a polishing pad of a chemical mechanical polishing device. The conditioner assembly comprises a conditioning head having a gimbal assembly, a shaft engaged to the conditioning head, and a linear torque bearing assembly slidably receiving the shaft. The linear torque bearing assembly is configured to operatively rotate the shaft assembly contemporaneously with allowing the shaft to extend and retract from a first open end of the linear torque bearing assembly. The conditioner assembly additionally comprises a bellows secured over the first open end and engaged to the conditioning head and a bearing housing disposed over a second open end of the linear torque bearing assembly. The conditioner back support respectively opposes the conditioner assembly such that the polishing belt supporting the polishing pad is disposed intermediate to the conditioner back support and the conditioner assembly.

Abstract: Polishing pads are provided for a linear chemical mechanical polishing apparatus used in manufacturing integrated circuits. The polishing pads, which are attached to a polishing belt, are grooved in patterns to advantageously transport slurry from the point of introduction to the point at which semiconductor wafers are polished. The patterns include at least one set of multiple parallel grooves extending across the polishing pads. The grooves form an angle with the direction of travel of the belt that is unequal to zero.

Abstract: A polishing head for a chemical mechanical polishing (CMP) apparatus. The polishing head includes a backplate, a retaining ring supported by the backplate, and a bladder member encircled by the retaining ring. The backplate of the polishing head comprises a driving plate biasedly coupled to a subcarrier by a bellows. The polishing head may further include a lift plate disposed on the subcarrier and beneath the bladder member. A method for polishing a substrate includes placing a substrate on the bladder member and positioning the substrate against a polishing pad such that the bladder member applies a selected pressure profile on the substrate.

Abstract: A conditioner assembly and a conditioner back support for conditioning a polishing pad of a chemical mechanical polishing device. The conditioner assembly comprises a conditioning head having a gimbal assembly, a shaft engaged to the conditioning head, and a linear torque bearing assembly slidably receiving the shaft. The linear torque bearing assembly is configured to operatively rotate the shaft assembly contemporaneously with allowing the shaft to extend and retract from a first open end of the linear torque bearing assembly. The conditioner assembly additionally comprises a bellows secured over the first open end and engaged to the conditioning head and a bearing housing disposed over a second open end of the linear torque bearing assembly. The bearing housing rotatably supports the linear torque bearing assembly such that a motor assembly can operatively drive the linear torque bearing assembly, the shaft, and the conditioning head.

Abstract: Heat is transferred between a linear CMP belt and an adjacent heat transfer source, providing a predetermined lateral temperature distribution across the belt. Temperature sensors generate feedback signals to control the heat transfer sources. Alternatively, process monitoring sensors provide feedback signals. The heat transfer source can include multiple selectively controllable individual heat transfer sources having differing temperatures, which can be above or below ambient temperature. The mechanism of heat transfer can include one or more of convection, conduction, and radiation. The configuration provides substantial flexibility to establish and maintain selective non-uniform temperature distributions across the polishing belt. This in turn permits precise control and stability of the polishing process. Heat transfer sources can include pulleys, slurry dispensers, polishing pad conditioners or conditioner back supports, fluid nozzles, and sealed fluid cavity belt supports.