Abstract: The invention provides a method for attenuating a radio frequency identification (RFID) reader. In one embodiment, the method includes optimizing a coverage area of an RFID reader.

Abstract: Acoustic emissions are detected by reflecting microwave radar signals off of an object, receiving reflected radar signals, generating an intermediate frequency, and filtering the intermediate frequency to remove low frequency signals associated with object movement and not acoustic emissions. A microwave Doppler radar detector provides the signals, a band-pass filter filters the intermediate frequency signal, and resulting signal is collected and analyzed to establish a relationship between the acoustic emission and the filtered signal. One application described is detecting tool wear using a microwave Doppler-based acoustic emission sensor and predicting tool wear based on the detected acoustic emission.

Abstract: A compressed air filtering cartridge includes a housing and a filter in the housing, the filter having a thermal vent. In one embodiment the filter includes a wall portion having a first condition when below a predetermined temperature range in which the wall portion blocks flow of air between opposite sides of the wall portion. The wall portion has a second condition when above the predetermined temperature range in which the wall portion does not block flow of air between opposite sides of the wall portion. The cartridge may be part of a compressed air system, between a compressor and an air dryer.

Abstract: An archery component mountable with respect to an archery bow. The archery component includes a sensor that senses a movement of an archery arrow with respect to the archery bow and/or a movement of the archery bow. The sensor transmits a signal, upon sensing at least one movement, to a signal processor housed within a body of the archery bow and in communication with the sensor. The signal processor receives the signal and activates the archery component in response to the received signal.

Abstract: The contact opening through an insulating layer is formed having a straight sidewall portion and a bowl shaped sidewall portion. The bowl shaped sidewall portion is near the top of the insulation layer to provide an enlarged diameter of the contact opening at the top relative to the bottom. A conductive material is then formed in the contact opening in electrical contact with a lower conductive layer. The conductive material forms a plug having an enlarged head, such as a nail head or a flat heat screw shape. The enlarged head protects the silicon and a barrier layer, if present, within the contact from being etched by any subsequent anisotropic etches. Thus, when an electrical interconnection layer such as aluminum is formed overlying the contact plug, the plug acts as an etch stop to prevent etching of a barrier layer of the barrier layer within the contact opening.

Abstract: An oil separator for use in a vehicle air system includes a recycling valve for removing coalesced oil. The recycling valve may include a piston movable in a cylinder in response to a control air pressure to open the recycling valve and thus drain coalesced oil from a sump under the influence of residual air pressure in the sump. The separator may include a fixture for mounting the separator to a vehicle, including a plurality of ports extending from an inlet port for directing air into the cartridge with a combined flow area at least equal to the flow area of the inlet port. The plurality of ports preferably extend at a right angle to the direction of flow of air through the inlet port. A safety relief valve on the separator releases air when the pressure exceeds a predetermined pressure.

Abstract: A user interface for multimedia centers advantageously utilizes hand-held inertial-sensing user input devices to select channels and quickly navigate the dense menus of options. Extensive use of the high resolution and bandwidth of such user input devices is combined with strategies to avoid unintentional inputs and with dense and intuitive interactive graphical displays.

Abstract: A fletching system including a sleeve positionable about an outer surface of an arrow shaft and at least one archery vane mounted to an outer surface of the sleeve. The sleeve has an initial inner diameter greater than an outer diameter of the arrow shaft and the sleeve is shrinkable to secure the fletching system to the arrow shaft. Methods for constructing a fletching system include mounting a shrinkable sleeve and at least one archery vane on an outer surface of the shrinkable sleeve and also attaching the fletching system with respect to an archery arrow.

Abstract: A user interface for multimedia centers advantageously utilizes hand-held inertial-sensing user input devices to select channels and quickly navigate the dense menus of options. Extensive use of the high resolution and bandwidth of such user input devices is combined with strategies to avoid unintentional inputs and with dense and intuitive interactive graphical displays.

Abstract: The contact opening through an insulating layer is formed having a straight sidewall portion and a bowl shaped sidewall portion. The bowl shaped sidewall portion is near the top of the insulation layer to provide an enlarged diameter of the contact opening at the top relative to the bottom. A conductive material is then formed in the contact opening in electrical contact with a lower conductive layer. The conductive material forms a plug having an enlarged head, such as a nail head or a flat heat screw shape. The enlarged head protects the silicon and a barrier layer, if present, within the contact from being etched by any subsequent anisotropic etches. Thus, when an electrical interconnection layer such as aluminum is formed overlying the contact plug, the plug acts as an etch stop to prevent etching of a barrier layer of the barrier layer within the contact opening.

Abstract: A method is provided for forming an improved planar structure of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A field oxide is grown across the integrated circuit patterned and etched to form an opening with substantially vertical sidewalls exposing a portion of an upper surface of a substrate underlying the field oxide where an active area will be formed. A gate electrode comprising a polysilicon gate electrode and a gate oxide are formed over the exposed portion of the substrate. The polysilicon gate has a height at its upper surface above the substrate at or above the height of the upper surface of the field oxide. The gate electrode preferably also comprises a silicide above the polysilicon and an oxide capping layer above the silicide. LDD regions are formed in the substrate adjacent the gate electrode and sidewall spacers are formed along the sides of the gate electrode including the silicide and the capping layer.

Abstract: Silver interconnects are formed by etching deep grooves into an insulating layer over the contact regions, exposing portions of the contact regions and defining the interconnects. The grooves are etched with a truncated V- or U-shape, wider at the top than at any other vertical location, and have a minimum width of 0.25 &mgr;m or less. An optional adhesion layer and a barrier layer are sputtered onto surfaces of the groove, including the sidewalls, followed by sputter deposition of a seed layer. Where aluminum is employed as the seed layer, a zincating process may then be optionally employed to promote adhesion of silver to the seed layer. The groove is then filled with silver by plating in a silver solution, or with silver and copper by plating in a copper solution followed by plating in a silver solution.

Abstract: A workpiece holding device for a T-slotted machine table includes a locator block having a planar bottom surface, a mounting hole that intersects the bottom surface to define a center point, at least one workpiece locating surface disposed a predetermined distance from the center point, and a key protruding from the bottom surface at a second point offset a predetermined distance from the center point. The protruding portion of the key has a width substantially the same as the T-slot opening so as to slidably mount in the T-slot. A fastener extends through the mounting hole and secures the locator block to a T-nut slidably mounted in the T-slot. A clamp secured to the locator block clamps the workpiece to the locating surface of the locator block. A method of using the device is also disclosed.

Abstract: A process for forming a smooth conformal refractory metal film on an insulating layer having a via formed therein. This process provides extremely good planarity and step coverage when used to form contacts in semiconductor circuits and, in addition, offers improved wafer alignment capability as well as enhanced reliability which result from the smooth surface morphology. The process includes forming contact openings through an insulating layer to a semiconductor substrate; depositing a first blanket layer of titanium using deposition conditions that provide a conformal film that exhibits good step coverage at the contact opening; and forming a second blanket layer of titanium using deposition conditions that provide reduced surface asperity height. The process is ideally suited to forming an electrical interconnection system for semiconductor integrated circuit devices such as static or dynamic random access memories and is particularly useful in VLSI devices that incorporate multiple levels of interconnect.

Abstract: Silver interconnects are formed by etching deep grooves into an insulating layer over the contact regions, exposing portions of the contact regions and defining the interconnects. The grooves are etched with a truncated V- or U-shape, wider at the top than at any other vertical location, and have a minimum width of 0.25 .mu.m or less. An optional adhesion layer and a barrier layer are sputtered onto surfaces of the groove, including the sidewalls, followed by sputter deposition of a seed layer. Where aluminum is employed as the seed layer, a zincating process may then be optionally employed to promote adhesion of silver to the seed layer. The groove is then filled with silver by plating in a silver solution, or with silver and copper by plating in a copper solution followed by plating in a silver solution.

Abstract: A method is provided for forming a planar transistor of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of field oxide regions are formed overlying a substrate electrically isolating a plurality of transistors encapsulated in a dielectric. LDD regions are formed in the substrate adjacent the transistors and the field oxide regions. Doped polysilicon raised source and drain regions are formed overlying the LDD regions and a tapered portion of the field oxide region and adjacent the transistor. These polysilicon raised source and drain regions will help to prevent any undesired amount of the substrate silicon from being consumed, reducing the possibility of junction leakage and punchthrough as well as providing a more planar surface for subsequent processing steps.

Abstract: The contact opening through an insulating layer is formed having a straight sidewall portion and a bowl shaped sidewall portion. The bowl shaped sidewall portion is near the top of the insulation layer to provide an enlarged diameter of the contact opening at the top relative to the bottom. A conductive material is then formed in the contact opening in electrical contact with a lower conductive layer. The conductive material forms a plug having an enlarged head, such as a nail head or a flat heat screw shape. The enlarged head protects the silicon and a barrier layer, if present, within the contact from being etched by any subsequent anisotropic etches. Thus, when an electrical interconnection layer such as aluminum is formed overlying the contact plug, the plug acts as an etch stop to prevent etching of a barrier layer of the barrier layer within the contact opening.

Abstract: A method is provided for forming a planar transistor of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A transistor encapsulated in a dielectric is formed over a substrate. First source and drain regions are formed in the substrate adjacent the transistor. Conductive raised second source and drain regions are formed which overly exposed portions of the first substrate source and drain regions adjacent the transistor. The raised second source and drain regions are formed such that an upper surface of the raised second source and drain regions are substantially planar with an upper surface of the transistor. The dielectric encapsulating the transistor electrically isolates the transistor from the raised second source and drain regions.

Abstract: An electrical connection structure is provided for protecting a barrier metal layer within a contact opening during the formation of an aluminum interconnection layer overlying a tungsten plugged connection structure. The deposited tungsten plug overlying the barrier metal layer is etched back sufficiently to create a slight recess at the opening. A thin layer of tungsten is then selectively deposited for filling the recess. This layer acts as an etch stop during aluminum interconnection layer formation and protects the underlying barrier metal layer.

Abstract: In an improved selection tungsten metallization system, a plurality of orifices (20) are cut into a first level dielectric layer (18). A nucleation layer (52), preferably Ti-W alloy, is then formed in each orifice (20) and on the outer surface of the first dielectric layer (18) in a second-level metallization pattern. A second dielectric layer (30) is deposited over the first dielectric layer (18) and the nucleation layer (52), and a reverse second level metallization pattern is used to etch slots (58) back down to the nucleation layers (52) and into orifices (20). Thereafter, tungsten is deposited by selective CVD to fill the first level orifices (20) and the second level slots (58) until the upper surfaces (62) of the tungsten conductors (60) are substantially coplanar with the upper surface (38) of the second dielectric layer (30).