Abstract: Double-data rate (DDR) transmission within a system-on-chip (SoC) via network-on-chip (NOC) interconnects is described. A method for transmitting data includes a local programmable delay circuit receiving a source synchronous clock (SSC) signal and outputting a delayed source synchronous clock (SSC) signal. The method further includes a local pulse generator, associated with a first NOC interconnect stage, receiving the delayed SSC signal and generating a first pulse in response to a first phase of the delayed SSC signal and generating a second pulse in response to a second phase of the delayed SSC signal. The method further includes a flop-repeater circuit, associated with the first NOC interconnect stage, capturing and launching data received from the source circuit in response to each of the first pulse and the second pulse. The method further includes a local offset circuit receiving the delayed SSC signal and providing a de-skewed SSC signal.

Abstract: Memory systems with burst mode having logic gates as sense elements and related methods are provided. A memory system comprises a memory array including a first set of memory cells coupled to a first wordline, a second set of memory cells coupled to a second wordline, and a plurality of sense elements, not including any sense amplifiers. The control unit is configured to generate control signals for: in response to a burst mode read request, simultaneously: (1) asserting a first wordline signal on the first wordline coupled to each of a plurality of first set of bitlines, and (2) asserting a second wordline signal on the second wordline coupled to each of a plurality of second set of bitlines, and as part of a burst, outputting data corresponding to a subset of each of the first set of memory cells and the second set of memory cells.

Abstract: Memory systems with burst mode having logic gates as sense elements and related methods are provided. A memory system comprises a memory array including a first set of memory cells coupled to a first wordline, a second set of memory cells coupled to a second wordline, and a plurality of sense elements, not including any sense amplifiers. The control unit is configured to generate control signals for: in response to a burst mode read request, simultaneously: (1) asserting a first wordline signal on the first wordline coupled to each of a plurality of first set of bitlines, and (2) asserting a second wordline signal on the second wordline coupled to each of a plurality of second set of bitlines, and as part of a burst, outputting data corresponding to a subset of each of the first set of memory cells and the second set of memory cells.

Abstract: Memory systems with burst mode having logic gates as sense elements and related methods are provided. A memory system comprises a memory array including a first set of memory cells coupled to a first wordline, a second set of memory cells coupled to a second wordline, and a plurality of sense elements, not including any sense amplifiers. The control unit is configured to generate control signals for: in response to a burst mode read request, simultaneously: (1) asserting a first wordline signal on the first wordline coupled to each of a plurality of first set of bitlines, and (2) asserting a second wordline signal on the second wordline coupled to each of a plurality of second set of bitlines, and as part of a burst, outputting data corresponding to a subset of each of the first set of memory cells and the second set of memory cells.

Abstract: Memory systems with burst mode having logic gates as sense elements and related methods are provided. A memory system comprises a memory array including a first set of memory cells coupled to a first wordline, a second set of memory cells coupled to a second wordline, and a plurality of sense elements, not including any sense amplifiers. The control unit is configured to generate control signals for: in response to a burst mode read request, simultaneously: (1) asserting a first wordline signal on the first wordline coupled to each of a plurality of first set of bitlines, and (2) asserting a second wordline signal on the second wordline coupled to each of a plurality of second set of bitlines, and as part of a burst, outputting data corresponding to a subset of each of the first set of memory cells and the second set of memory cells.

Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.

Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.

Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.

Abstract: A library of cells for designing an integrated circuit, the library comprises continuous diffusion compatible (CDC) cells. A CDC cell includes a p-doped diffusion region electrically connected to a supply rail and continuous from the left edge to the right edge of the CDC cell; a first polysilicon gate disposed above the p-doped diffusion region and electrically connected to the p-doped diffusion region; an n-doped diffusion region electrically connected to a ground rail and continuous from the left edge to the right edge; a second polysilicon gate disposed above the n-doped diffusion region and electrically connected to the n-doped diffusion region; a left floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the left edge; and a right floating polysilicon gate disposed over the p-doped and n-doped diffusion regions and proximal to the right edge.

Abstract: Write-through-read (WTR) comparator circuits and related WTR processes and memory systems are disclosed. The WTR comparator circuits can be configured to perform WTR functions for a multiple port file having one or more read and write ports. One or more WTR comparators in the WTR comparator circuit are configured to compare a read index into a file with a write index corresponding to a write-back stage selected write port among a plurality of write ports that can write data to the entry in the file. The WTR comparators then generate a WTR comparator output indicating whether the write index matches the read index to control a WTR function. In this manner, the WTR comparator circuit can employ less WTR comparators than the number of read and write port combinations. Providing less WTR comparators can reduce power consumption, cost, and area required on a semiconductor die for the WTR comparator circuit.

Abstract: Asymmetrically-arranged memories having reduced current leakage and/or latency, and related systems and methods are disclosed. In one embodiment, a memory comprises a memory access interface (MAI). The memory further comprises a first memory portion(s) accessible by the MAI. The first memory portion(s) has a first latency and a first current leakage. The memory further comprises a second memory portion(s) accessible by the MAI. To provide an asymmetrical memory arrangement, the first latency of the first memory portion(s) is increased such that the second memory portion(s) has a second latency greater than or equal to the first latency and a second current leakage greater than the first current leakage. Accordingly, the overall current leakage of the memory is reduced while not increasing overall latency of the memory. The first and second memory portion(s) may each be comprised of one or more memory sub-bank(s) and/or one or more memory bank(s).

Abstract: Static-based comparators and methods for comparing data are disclosed. The static-based comparator is configured to selectively switch at least one comparator output in response to a comparison of corresponding data with compare data, and a validity indicator for the data. If the validity indicator indicates valid data, the static-based comparator switches to drive the comparator output indicating either a match or mismatch between corresponding compared data. If the validity indicator indicates invalid data, the static-based comparator provides a mismatch on the comparator output without switching the static-based comparator regardless of whether or not the data matches the compare data. In this manner, the static-based comparator does not dissipate power switching the comparator output for data marked invalid. The static-based comparator can be employed in content addressable memories (CAMs) for comparing one or more bits of tag data to corresponding bit(s) of compare data.

Abstract: Write-through-read (WTR) comparator circuits and related WTR processes and memory systems are disclosed. The WTR comparator circuits can be configured to perform WTR functions for a multiple port file having one or more read and write ports. One or more WTR comparators in the WTR comparator circuit are configured to compare a read index into a file with a write index corresponding to a write-back stage selected write port among a plurality of write ports that can write data to the entry in the file. The WTR comparators then generate a WTR comparator output indicating whether the write index matches the read index to control a WTR function. In this manner, the WTR comparator circuit can employ less WTR comparators than the number of read and write port combinations. Providing less WTR comparators can reduce power consumption, cost, and area required on a semiconductor die for the WTR comparator circuit.

Abstract: Static-based comparators and methods for comparing data are disclosed. The static-based comparator is configured to selectively switch at least one comparator output in response to a comparison of corresponding data with compare data, and a validity indicator for the data. If the validity indicator indicates valid data, the static-based comparator switches to drive the comparator output indicating either a match or mismatch between corresponding compared data. If the validity indicator indicates invalid data, the static-based comparator provides a mismatch on the comparator output without switching the static-based comparator regardless of whether or not the data matches the compare data. In this manner, the static-based comparator does not dissipate power switching the comparator output for data marked invalid. The static-based comparator can be employed in content addressable memories (CAMs) for comparing one or more bits of tag data to corresponding bit(s) of compare data.

Abstract: A register file is disclosed. The register file includes a plurality of registers and a decoder. The decoder may be configured to receive an address for any one of the registers, and disable a read operation to the addressed register if data in the addressed register is invalid.

Abstract: Techniques for reducing power when reading a full-swing memory array are disclosed. The full-swing memory array includes a plurality of local bit lines and a global bit line. In order to reduce power consumption, a method of driving the global bit line includes the step of coupling the plurality of local bit lines to the global bit line through a plurality of tri-state devices. The method further includes the steps of generating a global select signal to enable one of the plurality of tri-state devices and selecting a corresponding local bit line to drive the output of the enabled tri-state device. In this way, the global bit line is statically driven so that consecutive reads of bits having the same value read over the global bit line do not result in transitioning the state of the global bit line.

Abstract: A method and circuit for optimizing power consumption and performance of driver circuits are described. More particularly, embodiments of the present invention provide an enhanced driver circuit. The enhanced driver circuit provides a first voltage, and a detector coupled to the enhanced driver that monitors the first voltage. If the first voltage falls below a predetermined value, the enhanced driver increases the first voltage to at least an optimal voltage.

Abstract: A method and circuit for optimizing power consumption and performance of driver circuits are described. More particularly, embodiments of the present invention provide an enhanced driver circuit. The enhanced driver circuit provides a first voltage, and a detector coupled to the enhanced driver that monitors the first voltage. If the first voltage falls below a predetermined value, the enhanced driver increases the first voltage to at least an optimal voltage.

Abstract: The present invention provides a method and system for a contention prevention scheme which provides contention prevention during scan-based test without adversely affecting the functional timing of the path circuit. The contention prevention scheme provides a circuit which includes a path circuit gated by a contention prevention circuit (CPC) and the CPC, where the CPC allows functional operation to occur without adversely affecting the functional operation timing, provided that a time skew between two input signals to the CPC is approximately less than a difference between a time delay associated with a scan-based test logic value and a time delay associated with a functional logic value. With a contention prevention circuit tuned in this manner, a static logical value during functional mode is provided, indicating no contention, which avoids adversely affecting the functional timing of the path circuit.