Abstract: A microelectronic assembly is provided, having thermoelectric elements formed on a die so as to pump heat away from the die when current flows through the thermoelectric elements. In one embodiment, the thermoelectric elements are integrated between conductive interconnection elements on an active side of the die. In another embodiment, the thermoelectric elements are on a backside of the die and electrically connected to a carrier substrate on a front side of the die. In a further embodiment, the thermoelectric elements are formed on a secondary substrate and transferred to the die.

Abstract: An embodiment of the present invention is a technique to heat spread at wafer level. A silicon wafer is thinned. A chemical vapor deposition diamond (CVDD) wafer processed. The CVDD wafer is bonded to the thinned silicon wafer to form a bonded wafer. Metallization is plated on back side of the CVDD wafer. The CVDD wafer is reflowed to flatten the back side.

Abstract: Electronic assemblies and methods for forming assemblies including a diamond substrate are described. One embodiment includes providing a diamond support and forming a porous layer of SiO2 on the diamond support. A diamond layer is formed by chemical vapor deposition on the porous layer so that the porous layer is between the diamond support and the diamond layer. A polycrystalline silicon layer is formed on the diamond layer. The polycrystalline silicon layer is polished to form a planarized surface. A semiconductor layer is coupled to the polysilicon layer. After coupling the semiconductor layer to the polysilicon layer, the diamond support is detached from the diamond layer by breaking the porous layer. The semiconductor layer on the diamond layer substrate is then further processed to form a semiconductor device.

Abstract: A method and apparatus for cooling an electronics chip with a cooling plate having integrated micro channels and manifold/plenum made in separate single-crystal silicon or low-cost polycrystalline silicon. Forming the microchannels in the cooling plate is more economical than forming the microchannels directly into the back of the chip being cooled. In some embodiments, the microchannels are high-aspect-ratio grooves formed (e.g., by etching) into a polycrystalline silicon cooling base, which is then attached to a cover (to contain the cooling fluid in the grooves) and to the back of the chip.

Abstract: A liquid metal thermal interface for an integrated circuit die. The liquid metal thermal interface may be disposed between the die and another heat transfer element, such as a heat spreader or heat sink. The liquid metal thermal interface includes a liquid metal in fluid communication with a surface of the die, and liquid metal moving over the die surface transfers heat from the die to the heat transfer element. A surface of the heat transfer element may also be in fluid communication with the liquid metal. Other embodiments are described and claimed.

Abstract: A method and arrangement for dissipating heat from a localized area within a semiconductor die is presented. A semiconductor die is constructed and arranged to have at least one conduit portion therein. At least a portion of the conduit portion is proximate to the localized area. The conduit portion is at least partially filled with a heat-dissipating material. The conduit portion absorbs heat from the localized area and dissipates at least a portion of the heat away from the localized area. As such, thermal stress on the die is reduced, and total heat from the die is more readily dissipated.

Abstract: A condensate removal apparatus with a wick structure, method for condensate removal and system for condensate removal using such a wick structure are described herein.

Abstract: The method and apparatus of the present invention dissipate heat from an electronic device to provide an efficient and universally applied thermal solution for high heat generating electronic devices. The apparatus comprises an evaporator, a condenser, a heater and conduits. The evaporator, condenser, and conduits define a closed system that has an interior volume which is partially filled with a liquid coolant. The evaporator is thermally connected to an electronic device, such as a processor, and removes thermal energy from the processor by evaporating the liquid coolant. When the apparatus is oriented such that no liquid coolant is in contact with the evaporator, the heater applies thermal energy to the coolant until the coolant begins to boil. Boiling the liquid coolant causes bubbles to form within the liquid coolant. The volume of the bubbles generated by boiling raises the level of the liquid coolant within the closed system until the liquid coolant comes into contact with the evaporator.

Abstract: According to an embodiment of the invention, a thermoelectric module (TEM) is formed between a first and a second thermally conductive device. A first dielectric layer is deposited over the first thermally conductive device, and interconnects are formed over the dielectric layer. Solder patches are then printed over the interconnects. A second dielectric layer is deposited over the second thermally conductive device. Interconnects and solder patches are deposited over the second dielectric layer. Alternating p- and n-type semiconductor elements are then placed over the patches over the first dielectric layer. The second thermally conductive device is then placed over the first device, and the solder is reflowed.

Abstract: An embodiment of the present invention is a technique to heat spread at wafer level. A silicon wafer is thinned. A chemical vapor deposition diamond (CVDD) wafer processed. The CVDD wafer is bonded to the thinned silicon wafer to form a bonded wafer. Metallization is plated on back side of the CVDD wafer. The CVDD wafer is reflowed to flatten the back side.

Abstract: Embodiments include electronic packages and methods for forming electronic packages. One method includes providing a die and a thermal interface material on the die. A metal body is adapted to fit over the die. A wetting layer of a material comprising indium is formed on the metal body. The thermal interface material on the die is brought into contact with the wetting layer of material comprising indium. The thermal interface material is heated to form a bond between the thermal interface material and the wetting layer so that the thermal interface material is coupled to the metal body, and to form a bond between the thermal interface material and the die so that the thermal interface material is coupled to the die.

Abstract: Embodiments of the invention provide one or more valves in which an electroactive material acts to open or close the valves to increase efficiency of a pump, which may be a pump that uses an electroactive diaphragm to pump fluid. The valves and pump may pump fluid to cool a device in a system.

Abstract: Embodiments of the present invention include an apparatus, method, and system for a thermal management arrangement having a low heat flux channel flow coupled to high heat flux channels.

Abstract: Apparatus and method of fabricating a heat dissipation device that includes at least one thermoelectric device fabricated with nano-wires for drawing heat from at least one high heat area on a microelectronic die. The nano-wires may be formed from bismuth containing materials and may be clustered of optimal performance.

Abstract: Apparatus and methods in accordance with the present invention provide a system to create turbulence inside microchannels of a microchannel cooling subsystem to disrupt vapor locks therein.

Abstract: An apparatus includes an integrated circuit (IC) die having a substrate formed of a first semiconductor material and a cooling device form of a second semiconductor material. The cooling device is directly mounted to the substrate of the IC die.

Abstract: A microelectronic assembly is provided, having thermoelectric elements formed on a die so as to pump heat away from the die when current flows through the thermoelectric elements. In one embodiment, the thermoelectric elements are integrated between conductive interconnection elements on an active side of the die. In another embodiment, the thermoelectric elements are on a backside of the die and electrically connected to a carrier substrate on a front side of the die. In a further embodiment, the thermoelectric elements are formed on a secondary substrate and transferred to the die.

Abstract: A method and apparatus for cooling an electronics chip with a cooling plate having integrated micro channels and manifold/plenum made in separate single-crystal silicon or low-cost polycrystalline silicon. Forming the microchannels in the cooling plate is more economical than forming the microchannels directly into the back of the chip being cooled. In some embodiments, the microchannels are high-aspect-ratio grooves formed (e.g., by etching) into a polycrystalline silicon cooling base, which is then attached to a cover (to contain the cooling fluid in the grooves) and to the back of the chip.

Abstract: A method and apparatus for removing vapor inside a liquid pump at the start up operation of the pump. In addition, a method and apparatus for removing liquid inside a compressor at the start up operation of the compressor. The pump and compressor each include a sensor attached to them that determines the physical state (i.e., liquid or vapor) of a material inside the pump or compressor. If vapor is detected inside the pump, a thermoelectric module connected to the pump is powered to condense the vapor into a liquid. Likewise, if liquid is detected inside the compressor a heater connected to the compressor is powered to evaporate the liquid into a vapor. After the state of the material inside the pump or compressor is changed, the pump or compressor is powered up for operation in a cooling system.

Abstract: Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the die.